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Inventor

Te-Yin Hsia

Inventor
Hsinchu, TW

Overview

2→
Patents
2009–2011
Patent span
Electricity
Primary field (CPC H)

Patents· 2 as inventor

Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.

H10Dprimary
H10DInorganic electric semiconductor devices100%
PatentTitleYear
8,004,038'Suppression of hot-carrier effects using double well for thin gate oxide LDMOS embedded in HV process'20117,521,741'Shielding structures for preventing leakages in high voltage MOS devices'2009

Career & activity timeline

Assembled from patent assignee/location history and declaration credentials.

2009–2011Patents assigned to TAIWAN SEMICONDUCTOR MFG (2)· patent assignee history
2009Based in Taipei, TW· patent location history
2011Based in Hsinchu, TW· patent location history

Inventor activity

Assignee and location history derived from the patent record.

Assignees
AssigneePatentsSpan
TAIWAN SEMICONDUCTOR MFG22009–2011
Locations
LocationPatentsSpan
Hsinchu, TW12011
Taipei, TW12009