Inventor

Monte A. Douglas

Inventor
Coppell, TX, US

Overview

51→
Patents
1987–2010
Patent span
Electricity
Primary field (CPC H)

Patents· 51 as inventor

Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.

H10Pprimary
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1033%
G03FPhotomechanical production of textured or patterned surfaces, e.g. for printing, for processing of semiconductor devices9%
Y10STechnical subjects covered by former uspc cross-reference art collections [xracs] and digests9%
C23FNon-mechanical removal of metallic material from surface6%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h106%
H10DInorganic electric semiconductor devices5%
B08BCleaning in general5%
C04BLime, magnesia4%
H05KPrinted circuits3%
Y10TTechnical subjects covered by former us classification3%
PatentTitleYear
7,732,225'Method for measuring contamination in liquids at PPQ levels'20106,432,317'Method to produce masking'20026,177,358'Photo-stimulated etching of CaF2'20016,024,801'Method of cleaning and treating a semiconductor device including a micromechanical device'20005,868,862'Method of removing inorganic contamination by chemical alteration and extraction in a supercritical fluid media'19995,868,856'Method for removing inorganic contamination by chemical derivitization and extraction'19995,695,569'Removal of metal contamination'19975,695,570'Method for the photo-stimulated removal of trace metals from a semiconductor surface'19975,584,938'Electrostatic particle removal and characterization'19965,565,179'Electrostatic particle removal and characterization'19965,545,290'Etching method'19965,520,992'Electrodes for high dielectric constant materials'19965,482,564'Method of unsticking components of micro-mechanical devices'19965,460,687'Anisotropic liquid phase photochemical etch'19955,431,774'Copper etching'19955,418,114'Anisotropic liquid phase photochemical mercury cadmium telluride etch'19955,387,497'High resolution lithography method using hydrogen developing reagent'19955,374,330'Anisotropic barium strontium titanate etch'19945,318,662'Copper etch process using halides'19945,316,895'Photolithographic method using non-photoactive resins'19945,312,516'Anisotropic tantalum pentoxide etch'19945,279,702'Anisotropic liquid phase photochemical copper etch'19945,238,529'Anisotropic metal oxide etch'19935,238,530'Anisotropic titanate etch'19935,201,989'Anisotropic niobium pentoxide etch'19935,122,225'Selective etch method'19925,100,499'Copper dry etch process using organic and amine radicals'19925,041,362'Dry developable resist etch chemistry'19915,010,378'Tapered trench structure and process'19915,000,820'Methods and apparatus for etching mercury cadmium telluride'19914,999,320'Method for suppressing ionization avalanches in a helium wafer cooling assembly'19914,984,039'Tapered trench structure and process'19914,980,020'Local interconnect etch technique'19904,957,590'Method for forming local interconnects using selective anisotropy'19904,920,073'Selective silicidation process using a titanium nitride protective layer'19904,916,511'Trench structure and process'19904,915,777'Method for etching tungsten'19904,891,303'Trilayer microlithographic process using a silicon-based resist as the middle layer'19904,882,008'Dry development of photoresist'19894,863,559'Method for forming local interconnects using chlorine bearing agents'19894,855,017'Trench etch process for a single-wafer RIE dry etch reactor'19894,855,015'Dry etch process for selectively etching non-homogeneous material bilayers'19894,807,016'Dry etch of phosphosilicate glass with selectivity to undoped oxide'19894,793,896'Method for forming local interconnects using chlorine bearing agents'19884,784,720'Trench etch process for a single-wafer RIE dry etch reactor'19884,758,305'Contact etch method'19884,711,698'Silicon oxide thin film etching process'19874,702,795'Trench etch process'19874,690,729'Tapered trench process'19874,675,073'Tin etch process'19874,654,112'Oxide etch'1987

Career & activity timeline

Assembled from patent assignee/location history and declaration credentials.

1987–2010Patents assigned to TEXAS INSTRUMENTS INC (51)· patent assignee history
1987–2002Based in Coppell, TX, US· patent location history
1987–1991Based in Dallas, TX, US· patent location history
2010Based in Richardson, TX, US· patent location history

Inventor activity

Assignee and location history derived from the patent record.

Assignees
AssigneePatentsSpan
TEXAS INSTRUMENTS INC511987–2010
Locations
LocationPatentsSpan
Coppell, Texas, US451987–2002
Dallas, Texas, US51987–1991
Richardson, Texas, US12010