Inventor
Serge Biesemans
Inventor
Leuven, BE
Overview
Patents· 4 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
H10Dprimary
H10DInorganic electric semiconductor devices38%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1025%
G03FPhotomechanical production of textured or patterned surfaces, e.g. for printing, for processing of semiconductor devices13%
G06FElectric digital data processing13%
H01LSemiconductor devices13%
PatentTitleYear
10,438,806Methods and system of using organosilicates as patterning films20197,504,329'Method of forming a Yb-doped Ni full silicidation low work function gate electrode for n-MOSFET'20097,302,376'Device modeling for proximity effects'20076,884,672'Method for forming an electronic device'2005Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
2005–2007Patents assigned to IBM (2)· patent assignee history
2005–2019Based in Leuven, BE· patent location history
2007Based in Mount Kisco, NY, US· patent location history
2009Patents assigned to IMEC INTER UNI MICRO ELECTR (1)· patent assignee history
2009Patents assigned to NAT UNIVERSITY OF SINGAPORE NU (1)· patent assignee history
2009Patents assigned to TEXAS INSTRUMENTS INC (1)· patent assignee history
2019Patents assigned to TOKYO ELECTRON LTD (1)· patent assignee history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| IBM | 2 | 2005–2007 |
| IMEC INTER UNI MICRO ELECTR | 1 | 2009 |
| NAT UNIVERSITY OF SINGAPORE NU | 1 | 2009 |
| TEXAS INSTRUMENTS INC | 1 | 2009 |
| TOKYO ELECTRON LTD | 1 | 2019 |
Locations
| Location | Patents | Span |
|---|---|---|
| Leuven, BE | 3 | 2005–2019 |
| Mount Kisco, New York, US | 1 | 2007 |