Inventor

Mark Holst

Inventor
Concord, CA, US

Overview

33→
Patents
1992–2010
Patent span
Performing operations
Primary field (CPC B)

Patents· 33 as inventor

Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.

B01Dprimary
B01DSeparation24%
C23CCoating metallic material16%
B01JChemical or physical processes, e.g. catalysis or colloid chemistry11%
F23GCremation furnaces10%
F23CMethods or apparatus for combustion using fluid fuel or solid fuel suspended in  a carrier gas or air7%
Y02CCapture, storage, sequestration or disposal of greenhouse gases [ghg]6%
C30BSingle-crystal growth5%
G01NInvestigating or analysing materials by determining their chemical or physical properties3%
E04BGeneral building constructions2%
E04CStructural elements2%
PatentTitleYear
7,695,700'Effluent gas stream treatment system having utility for oxidation treatment of semiconductor manufacturing effluent gases'20107,214,349'Effluent gas stream treatment system having utility for oxidation treatment of semiconductor manufacturing effluent gases'20076,833,024'Abatement of effluent from chemical vapor deposition processes using ligand exchange resistant metal-organic precursor solutions'20046,759,018'Method for point-of-use treatment of effluent gas streams'20046,749,671'Abatement of effluents from chemical vapor deposition processes using organometallic source reagents'20046,540,814'Integrated ion implant scrubber system'20036,537,353'Abatement of effluents from chemical vapor deposition processes using organometallic source reagents'20036,500,487'Abatement of effluent from chemical vapor deposition processes using ligand exchange resistant metal-organic precursor solutions'20026,491,884'In-situ air oxidation treatment of MOCVD process effluent'20026,391,267'Method of reducing internal combustion engine emissions, and system for same'20026,391,385'Method of abating of effluents from chemical vapor deposition processes using organometallic source reagents'20026,338,312'Integrated ion implant scrubber system'20026,333,010'Effluent gas stream treatment system having utility for oxidation treatment of semiconductor manufacturing effluent gases'20016,322,756'Effluent gas stream treatment system having utility for oxidation treatment of semiconductor manufacturing effluent gases'20016,257,869'Matrix bed for generating non-planar reaction wave fronts, and method thereof'20016,126,913'Thermal oxidizers with improved preheating means and processes for operating same'20006,003,305'Method of reducing internal combustion engine emissions, and system for same'19995,989,010'Matrix bed for generating non-planar reaction wave fronts, and method thereof'19995,955,037'Effluent gas stream treatment system having utility for oxidation treatment of semiconductor manufacturing effluent gases'19995,935,283'Clog-resistant entry structure for introducing a particulate solids-containing and/or solids-forming gas stream to a gas processing system'19995,914,091'Point-of-use catalytic oxidation apparatus and method for treatment of voc-containing gas streams'19995,882,366'Alternating wash/dry water scrubber entry'19995,846,275'Clog-resistant entry structure for introducing a particulate solids-containing and/or solids-forming gas stream to a gas processing system'19985,833,888'Weeping weir gas/liquid interface structure'19985,770,784'Systems for the treatment of commingled wastes and methods for treating commingled wastes'19985,650,128'Method for destruction of volatile organic compound flows of varying concentration'19975,637,283'Method and afterburner apparatus for control of highly variable flows'19975,635,139'Method and apparatus for destruction of volatile organic compound flows of varying concentration'19975,601,790'Method and afterburner apparatus for control of highly variable flows'19975,533,890'Method and apparatus for control of fugitive VOC emissions'19965,320,518'Method and apparatus for recuperative heating of reactants in an reaction matrix'19945,284,776'Aqueous quinolone concentration assay'19945,165,884'Method and apparatus for controlled reaction in a reaction matrix'1992

Career & activity timeline

Assembled from patent assignee/location history and declaration credentials.

1992–2002Patents assigned to THERMATRIX INC (13)· patent assignee history
1992–2010Based in Concord, CA, US· patent location history
1994Patents assigned to ABBOTT LAB (1)· patent assignee history
1994Based in Waukegan, IL, US· patent location history
1998–1999Patents assigned to ATMI ECOSYS CORP (6)· patent assignee history
2001–2004Patents assigned to ADVANCED TECH MATERIALS (9)· patent assignee history
2001–2004Based in San Jose, CA, US· patent location history
2002–2004Based in Sunnyvale, CA, US· patent location history
2007–2010Patents assigned to APPLIED MATERIALS INC (2)· patent assignee history

Inventor activity

Assignee and location history derived from the patent record.

Assignees
AssigneePatentsSpan
THERMATRIX INC131992–2002
ADVANCED TECH MATERIALS92001–2004
ATMI ECOSYS CORP61998–1999
APPLIED MATERIALS INC22007–2010
ABBOTT LAB11994
Locations
LocationPatentsSpan
Concord, California, US251992–2010
San Jose, California, US42001–2004
Sunnyvale, California, US32002–2004
Waukegan, Illinois, US11994