Inventor
Beth R. Cook
Inventor
Meridian, ID, US
Overview
Patents· 18 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
H01Lprimary
H01LSemiconductor devices24%
H10BElectronic memory devices24%
H10NElectric solid-state devices not otherwise provided for21%
H10DInorganic electric semiconductor devices14%
G11CStatic stores10%
H01GCapacitors3%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h103%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h102%
PatentTitleYear
10,879,344Memory cells comprising ferroelectric material and including current leakage paths having different total resistances202010,833,092Methods of incorporating leaker-devices into capacitor configurations to reduce cell disturb, and capacitor configurations incorporating leaker-devices202010,680,057Methods of forming a capacitor comprising ferroelectric material and including current leakage paths having different total resistances202010,650,978Methods of incorporating leaker devices into capacitor configurations to reduce cell disturb202010,403,630Semiconductor devices including ferroelectric materials201910,396,145Memory cells comprising ferroelectric material and including current leakage paths having different total resistances201910,090,462Resistive memory devices201810,062,703Methods of forming a ferroelectric memory cell20189,698,343'Semiconductor device structures including ferroelectric memory cells'20179,691,976'Interfacial cap for electrode contacts in memory cell arrays'20179,431,606'Memory cells'20169,324,943'Filamentary memory devices and methods'20169,306,162'Interfacial cap for electrode contacts in memory cell arrays'20169,231,206'Methods of forming a ferroelectric memory cell'20169,224,945'Resistive memory devices'20158,809,157'Methods of forming a programmable region that comprises a multivalent metal oxide portion and an oxygen containing dielectric portion'20148,797,784'Filamentary memory devices and methods'20148,633,084'Methods of forming a memory cell having programmable material that comprises a multivalent metal oxide portion and an oxygen containing dielectric portion'2014Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
2014–2020Patents assigned to MICRON TECHNOLOGY INC (16)· patent assignee history
2014–2015Patents assigned to BI LEI (2)· patent assignee history
2014–2015Patents assigned to COOK BETH R (2)· patent assignee history
2014–2015Patents assigned to RAMASWAMY DURAI VISHAK NIRMAL (2)· patent assignee history
2014–2019Based in Meridian, ID, US· patent location history
2015Patents assigned to COLLINS DALE W (1)· patent assignee history
2019–2020Based in Boise, ID, US· patent location history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| MICRON TECHNOLOGY INC | 16 | 2014–2020 |
| BI LEI | 2 | 2014–2015 |
| COOK BETH Rself | 2 | 2014–2015 |
| RAMASWAMY DURAI VISHAK NIRMAL | 2 | 2014–2015 |
| COLLINS DALE W | 1 | 2015 |
Locations
| Location | Patents | Span |
|---|---|---|
| Meridian, ID, US | 13 | 2014–2019 |
| Boise, ID, US | 5 | 2019–2020 |