Inventor
Meng-Hsuan Weng
Inventor
Hsinchu, TW
Overview
Patents· 4 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
H10Bprimary
H10BElectronic memory devices57%
H10DInorganic electric semiconductor devices43%
PatentTitleYear
8,183,106'Apparatus and associated method for making a floating gate memory device with buried diffusion dielectric structures and increased gate coupling ratio'20127,776,690'Method of forming a contact on a semiconductor device'20107,271,062'Non-volatile memory cell and fabricating method thereof and method of fabricating non-volatile memory'20077,214,983'Non-volatile memory and fabricating method thereof'2007Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
2007–2012Patents assigned to MACRONIX INT CO LTD (4)· patent assignee history
2007–2010Based in Hsinchu, TW· patent location history
2012Patents assigned to CHEN KUAN FU (1)· patent assignee history
2012Patents assigned to CHEN MING SHANG (1)· patent assignee history
2012Patents assigned to CHEN YIN JEN (1)· patent assignee history
2012Patents assigned to HAN TZUNG TING (1)· patent assignee history
2012Based in Taichung, TW· patent location history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| MACRONIX INT CO LTD | 4 | 2007–2012 |
| CHEN KUAN FU | 1 | 2012 |
| CHEN MING SHANG | 1 | 2012 |
| CHEN YIN JEN | 1 | 2012 |
| HAN TZUNG TING | 1 | 2012 |
Locations
| Location | Patents | Span |
|---|---|---|
| Hsinchu, TW | 3 | 2007–2010 |
| Taichung, TW | 1 | 2012 |