Inventor
Byung Jin Ahn
Inventor
Seoul, KR
Overview
Patents· 24 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
H10Bprimary
H10BElectronic memory devices24%
H10DInorganic electric semiconductor devices22%
G11CStatic stores11%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h109%
H04MTelephonic communication7%
Y10STechnical subjects covered by former uspc cross-reference art collections [xracs] and digests7%
H03MCoding4%
H04BTransmission4%
B60HArrangements of heating, cooling, ventilating or other air-treating devices specially adapted for passenger or goods spaces of vehicles2%
B60KArrangement or mounting of propulsion units or of transmissions in vehicles2%
PatentTitleYear
10,972,129Low density parity check code decoder and method for decoding LDPC code202110,917,120Low-complexity syndrom based decoding apparatus and method thereof20218,358,278'Input device, mobile terminal having the same, and user interface thereof'20138,091,622'System and method for cooling engine room using blowing device'20127,787,914'Mobile communication terminal having opening mechanism'20107,428,430'Open and close apparatus of slide type portable terminal'20087,299,078'Mobile terminal'20076,960,805'Flash memory cell and method of manufacturing the same, and programming/erasing/reading method in the flash memory cell'20056,703,275'Flash memory cell and method of manufacturing the same, and programming/erasing/reading method in the flash memory cell'20046,583,465'Code addressable memory cell in a flash memory device'20036,465,302'Method of manufacturing a flash memory device'20026,424,568'Code addressable memory cell in flash memory device'20026,407,947'Method of erasing a flash memory device'20026,381,192'Address buffer in a flash memory'20025,877,525'Flash EEPROM cell and method of making the same'19995,867,426'Method of programming a flash memory cell'19995,859,453'Flash EEPROM cell and method of making the same'19995,852,312'Flash eeprom cell'19985,716,865'Method of making split gate flash EEPROM cell by separating the tunneling region from the channel'19985,652,161'Method of making split gate flash EEPROM cell'19975,652,458'Structure of a high voltage transistor in a semiconductor device and method of manufacturing the same'19975,614,747'Method for manufacturing a flash EEPROM cell'19975,612,237'Method of making flash EEPROM cell'19975,563,080'Method of manufacturing a high voltage transistor in a semiconductor device'1996Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
1996–2003Patents assigned to HYUNDAI ELECTRONICS IND (13)· patent assignee history
1996–2021Based in Seoul, KR· patent location history
2002Based in Ichon-shi, KR· patent location history
2004–2005Patents assigned to HYNIX SEMICONDUCTOR INC (2)· patent assignee history
2007–2013Patents assigned to LG ELECTRONICS INC (4)· patent assignee history
2007–2012Based in Gyeonggi-do, KR· patent location history
2012Patents assigned to AHN BYUNG JIN (1)· patent assignee history
2021Patents assigned to UNIV KOREA RES & BUS FOUND (2)· patent assignee history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| HYUNDAI ELECTRONICS IND | 13 | 1996–2003 |
| LG ELECTRONICS INC | 4 | 2007–2013 |
| HYNIX SEMICONDUCTOR INC | 2 | 2004–2005 |
| UNIV KOREA RES & BUS FOUND | 2 | 2021 |
| AHN BYUNG JINself | 1 | 2012 |
Locations
| Location | Patents | Span |
|---|---|---|
| Seoul, KR | 20 | 1996–2021 |
| Gyeonggi-do, KR | 3 | 2007–2012 |
| Ichon-shi, KR | 1 | 2002 |