Inventor

William G. America

Inventor
Kingston, NY, US

Overview

22→
Patents
1984–2012
Patent span
Electricity
Primary field (CPC H)

Patents· 22 as inventor

Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.

H10Pprimary
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1018%
G01NInvestigating or analysing materials by determining their chemical or physical properties11%
H10FInorganic semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation11%
C09GPolishing compositions9%
C09KMaterials for miscellaneous applications, not provided for elsewhere9%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h107%
Y02EReduction of greenhouse gas [ghg] emissions, related to energy generation, transmission or distribution5%
Y10STechnical subjects covered by former uspc cross-reference art collections [xracs] and digests5%
B81BMicrostructural devices or systems, e.g. micromechanical devices4%
C23CCoating metallic material4%
PatentTitleYear
8,106,485'Chemical oxide removal of plasma damaged SiCOH low k dielectrics'20127,404,874'Method and apparatus for treating wafer edge region with toroidal plasma'20087,368,393'Chemical oxide removal of plasma damaged SiCOH low k dielectrics'20087,129,159'Integrated dual damascene RIE process with organic patterning layer'20067,091,164'Slurry for chemical mechanical polishing silicon dioxide'20066,875,688'Method for reactive ion etch processing of a dual damascene structure'20056,627,107'Slurry for chemical mechanical polishing silicon dioxide'20036,544,892'Slurry for chemical mechanical polishing silicon dioxide'20036,491,843'Slurry for chemical mechanical polishing silicon dioxide'20026,489,642'Image sensor having improved spectral response uniformity'20026,468,910'Slurry for chemical mechanical polishing silicon dioxide'20026,403,993'Charge coupled image sensor with u-shaped gates'20026,300,160'Process for charge coupled image sensor with U-shaped gates'20015,585,283'Method for establishing an electrical field by thinning an implanted region at a surface of a semiconductor device'19965,362,978'Method for establishing an electrical field at a surface of a semiconductor device'19945,270,221'Method of fabricating high quantum efficiency solid state sensors'19935,270,125'Boron nutride membrane in wafer structure'19935,066,533'Boron nitride membrane in wafer structure and process of forming the same'19914,969,938'Fluid connector for microdevices'19904,876,005'High pressure column assembly for a liquid chromatograph system'19894,587,014'Liquid chromatography column assembly'19864,476,731'Injection valve for liquid chromatographic column and system therefor'1984

Career & activity timeline

Assembled from patent assignee/location history and declaration credentials.

1986–1991Patents assigned to PERKIN ELMER CORP (4)· patent assignee history
1986–1989Based in Danbury, CT, US· patent location history
1991–1996Based in Newtown, CT, US· patent location history
1993–1996Patents assigned to HUGHES AIRCRAFT CO (3)· patent assignee history
2001–2003Patents assigned to EASTMAN KODAK CO (6)· patent assignee history
2001–2006Based in Hilton, NY, US· patent location history
2002–2006Patents assigned to UNIV CLARKSON (2)· patent assignee history
2002–2012Based in Kingston, NY, US· patent location history
2002Based in Rochester, NY, US· patent location history
2005–2012Patents assigned to IBM (5)· patent assignee history

Inventor activity

Assignee and location history derived from the patent record.

Assignees
AssigneePatentsSpan
EASTMAN KODAK CO62001–2003
IBM52005–2012
PERKIN ELMER CORP41986–1991
HUGHES AIRCRAFT CO31993–1996
UNIV CLARKSON22002–2006
Locations
LocationPatentsSpan
Kingston, New York, US62002–2012
Hilton, New York, US62001–2006
Newtown, CT, US51991–1996
Danbury, CT, US21986–1989
Rochester, New York, US12002