Inventor
TE-HSIEN HSIEH
Inventor
TW
Overview
Patents· 8 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
H01Lprimary
H01LSemiconductor devices22%
C23CCoating metallic material11%
H01JElectric discharge tubes or discharge lamps11%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1011%
H10BElectronic memory devices7%
H10DInorganic electric semiconductor devices7%
H10NElectric solid-state devices not otherwise provided for7%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h107%
B01DSeparation4%
B01JChemical or physical processes, e.g. catalysis or colloid chemistry4%
PatentTitleYear
12,456,677Via landing on first and second barrier layers to reduce cleaning time of conductive structure202512,424,419Ion beam etching chamber with etching by-product redistributor202512,362,154Ion beam etching chamber with etching by-product redistributor202512,183,764Channel pattern design to improve carrier transfer efficiency202411,776,901Via landing on first and second barrier layers to reduce cleaning time of conductive structure202311,751,4063D RRAM cell structure for reducing forming and set voltages202311,690,232High density memory devices with low cell leakage and methods for forming the same202311,239,060Ion beam etching chamber with etching by-product redistributor2022Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
2022–2025Patents assigned to TAIWAN SEMICONDUCTOR MFG CO LTD (8)· patent assignee history
2022–2025Based in TW· patent location history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| TAIWAN SEMICONDUCTOR MFG CO LTD | 8 | 2022–2025 |
Locations
| Location | Patents | Span |
|---|---|---|
| TW | 8 | 2022–2025 |