Inventor
Satoshi Yanagiya
Inventor
Kawasaki, JP
Overview
Patents· 10 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
H10Dprimary
H10DInorganic electric semiconductor devices39%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1022%
Y10STechnical subjects covered by former uspc cross-reference art collections [xracs] and digests17%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h1011%
C23CCoating metallic material6%
C30BSingle-crystal growth6%
PatentTitleYear
5,770,514'Method for manufacturing a vertical transistor having a trench gate'19985,726,088'Method of manufacturing a semiconductor device having a buried insulated gate'19985,610,422'Semiconductor device having a buried insulated gate'19975,589,421'Method of manufacturing annealed films'19965,578,508'Vertical power MOSFET and process of fabricating the same'19965,321,289'Vertical MOSFET having trench covered with multilayer gate film'19945,242,845'Method of production of vertical MOS transistor'19935,126,807'Vertical MOS transistor and its production method'19925,084,408'Method of making complete dielectric isolation structure in semiconductor integrated circuit'19924,984,052'Bonded substrate of semiconductor elements having a high withstand voltage'1991Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
1991–1998Patents assigned to TOSHIBA KK (10)· patent assignee history
1991–1998Based in Kawasaki, JP· patent location history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| TOSHIBA KK | 10 | 1991–1998 |
Locations
| Location | Patents | Span |
|---|---|---|
| Kawasaki, JP | 10 | 1991–1998 |