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Inventor

Tetsuya Iizuka

Inventor
Kanagawa, JP

Overview

107→
Patents
1979–2020
Patent span
Electricity
Primary field (CPC H)

Patents· 107 as inventor

Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.

G02Fprimary
G02FOptical devices or arrangements for the control of light by modification of the optical properties of the media of the elements involved therein19%
H10DInorganic electric semiconductor devices13%
H04NPictorial communication, e.g. television12%
G11CStatic stores9%
H10FInorganic semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation6%
H01LSemiconductor devices5%
H03KPulse technique3%
H10BElectronic memory devices3%
B60RVehicles, vehicle fittings, or vehicle parts, not otherwise provided for2%
C08FMacromolecular compounds obtained by reactions only involving carbon-to-carbon unsaturated bonds2%
PatentTitleYear
10,595,390Plasma torch202010,429,688Liquid crystal display device201910,134,906Display device201810,048,543Liquid crystal display panel and method of manufacturing the same20189,887,830'Clock generating apparatus and clock data recovering apparatus'20189,847,426Display device20179,810,936'Display panel'20179,810,959'Liquid crystal display including a mainpixel electrode'20179,810,957'Liquid crystal display device'20179,658,505'Display device'20179,548,322'Display device'20179,543,326'Display device'20179,470,936'Liquid crystal display device'2016RE045891'Solid state imaging device'20169,250,480'Liquid crystal display panel and method of manufacturing the same'20169,242,407'Resin for thermal imprinting'20169,176,354'Liquid crystal display device'20159,166,770'Clock-generating device and clock data recovery device'20159,140,943'Liquid crystal display'20159,136,281'Display device'20159,104,075'Liquid crystal display device'20159,041,827'Solid-state image pickup device and signal processing method therefor'20159,025,101'Liquid crystal display'20158,902,397'Liquid crystal display panel and method of manufacturing the same'20148,896,738'Solid-state image pickup device and signal processing method therefor'20148,867,006'Liquid crystal display device'20148,853,610'Imaging device'20148,721,950'Resin for thermal imprint'20148,587,688'Solid-state image pickup device and signal processing method therefor'20138,547,511'Liquid crystal display panel'20138,462,239'Solid-state imaging device and electronic imaging device having multi-stage element isolation layer'20138,324,332'Resin for thermal imprint'20127,924,393'Liquid crystal display device'20117,728,268'Solid-state imaging device and electronic device'20107,544,887'Electrical junction box'20097,532,282'LCD device having a semi-transmission area with bump layer in a reflective portion thereof and a transmission portion having a transparent electrode with spacer disposed thereon'20097,500,856'Electrical junction box'20097,471,358'Liquid crystal display device'20087,391,053'Inspection substrate for display device'20087,307,660'Method for driving solid-state image pickup apparatus, solid-state image pickup device and camera'20077,271,835'Solid-state image pickup device and device driving control method for solid-state image pickup'20077,256,831'Method for driving an imaging device and image pickup device, wherein signals corresponding to same color outputs are combined'20077,227,570'Solid-state image pickup device and signal processing method therefor'20077,002,630'Method of driving solid-state imaging device, solid-state imaging device and camera'20066,888,609'Liquid crystal display device'20056,808,868'Method for manufacturing a substrate for a display panel'20046,743,863'Resin composition comprising ethylene-based polymers and process for its production'20046,721,009'Method of driving solid state imaging device'20046,686,960'Method for driving an imaging device and image pickup device wherein signals corresponding to same color outputs are combined'20046,674,500'Liquid crystal display device wherein liquid crystal inlet shielded by means of shield pattern and second outer periphery wiring'20046,570,639'Liquid crystal display device including shield pattern and color filter coexist together in the vicinity of the inlet'20036,515,720'Active matrix liquid crystal display device'20036,384,882'Active matrix liquid crystal display device including wiring line with light blocking property columnar spacers and frame pattern around display area'20026,228,425'Cable reel including a sound-absorbing material and method for producing the sound-absorbing material for the cable reel'20016,196,488'Sound-absorbing material and a cable reel including the same'20016,191,792'Scheme for automatic data conversion definition generation according to data feature in visual multidimensional data analysis tool'20016,169,577'Color CCD solid-state image pickup'20016,152,394'Sound-absorbing material and a cable reel including the same'20006,078,366'Array substrate comprising semiconductor contact layers having same outline as signal lines'20006,065,707'Cable reel including a sound-absorbing material and method for producing the sound-absorbing material for the cable reel'20006,028,652'Array substrate for display device and manufacturing method thereof'20005,975,453'Sound-absorbing material and a cable reel including the same'19995,966,190'Array substrate for displaying device with capacitor lines having particular connections'19995,924,923'Air conditioner indoor unit'19995,920,082'Liquid crystal display device having a TFT switch composed of a separate transparent layer for connecting the pixel and drain electrodes'19995,877,808'Image pickup unit having reduced signaling lines'19995,847,758'Color CCD solid-state image pickup device'19985,835,171'Liquid crystal display device comprises a plurality of TFTs with a desirable channel length which reduces the resistance of the scanning lines'19985,835,177'Array substrate with bus lines takeout/terminal sections having multiple conductive layers'19985,670,813'Protection circuit for electronic components employing bipolar transistors'19975,379,125'Signal processing circuit for solid-state image sensor'19955,293,515'Amplifier circuit having two inverters'19945,289,022'CCD shift register having a plurality of storage regions and transfer regions therein'19945,287,192'Solid-state imager for use with two different TV systems'19945,227,901'Liquid crystal display device'19935,216,489'Solid state image sensor'19935,194,751'Structure of solid-state image sensing devices'19935,182,622'Charge coupled device imager having multichannel readout structure'19935,084,745'Semiconductor memory device having a floating gate'19925,029,190'Output circuit having high charge to voltage conversion gain'19914,928,074'Automatic gain control circuit'19904,857,763'MOS semiconductor integrated circuit in which the production of hot carriers near the drain of a short n channel conductivity type MOS transistor is decreased'19894,813,022'Static memory with pull-up circuit for pulling-up a potential on a bit line'19894,803,405'Plasma processing apparatus and method'19894,744,063'Static memory utilizing transition detectors to reduce power consumption'19884,740,713'MOS semiconductor integrated circuit in which the production of hot carriers near the drain of a short n channel conductivity type MOS transistor is decreased'19884,698,789'MOS semiconductor device'19874,683,382'Power-saving voltage supply'19874,682,306'Self-refresh control circuit for dynamic semiconductor memory device'19874,677,592'Dynamic RAM'19874,664,621'Gas cutting torch'19874,646,126'Semiconductor device'19874,642,673'Floating gate type EEPROM with a substrate region used for the control gate'19874,641,165'Dynamic memory device with an RC circuit for inhibiting the effects of alpha particle radiation'19874,639,758'Metal oxide semiconductor field-effect transistor with metal source making ohmic contact to channel-base region'19874,631,563'Metal oxide semiconductor field-effect transistor with metal source region'19864,618,945'Semiconductor memory device'19864,594,519'Low power consumption, high speed CMOS signal input circuit'19864,587,638'Semiconductor memory device'19864,559,548'CMOS Charge pump free of parasitic injection'19854,532,609'Semiconductor memory device'19854,497,043'Semiconductor memory device'19854,404,657'Semiconductor memory circuit'19834,401,903'MOS Decoder circuit'19834,384,300'Negative resistance device'19834,231,055'Complementary MOS transistors without an isolation region'19804,156,154'Flip-flop circuit'1979

Career & activity timeline

Assembled from patent assignee/location history and declaration credentials.

1979–2004Patents assigned to TOKYO SHIBAURA ELECTRIC CO (14)· patent assignee history
1979–1987Based in Kawasaki, JP· patent location history
1985–1992Based in Funabashi, JP· patent location history
1987–2005Patents assigned to TOSHIBA KK (22)· patent assignee history
1987–2019Based in Tokyo, JP· patent location history
1990–2016Patents assigned to SONY CORP (25)· patent assignee history
1990–2016Based in Kanagawa, JP· patent location history
2004–2018Based in Saitama, JP· patent location history
2012–2016Patents assigned to IIZUKA TETSUYA (11)· patent assignee history
2014–2019Patents assigned to JAPAN DISPLAY INC (19)· patent assignee history

Inventor activity

Assignee and location history derived from the patent record.

Assignees
AssigneePatentsSpan
SONY CORP251990–2016
TOSHIBA KK221987–2005
JAPAN DISPLAY INC192014–2019
TOKYO SHIBAURA ELECTRIC CO141979–2004
IIZUKA TETSUYAself112012–2016
Locations
LocationPatentsSpan
Kanagawa, JP261990–2016
Tokyo, JP171987–2019
Saitama, JP152004–2018
Funabashi, JP141985–1992
Kawasaki, JP101979–1987