Inventor
Vikram Kowshik
Inventor
San Jose, CA, US
Overview
Patents· 21 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
G11Cprimary
G11CStatic stores45%
H03KPulse technique10%
H10BElectronic memory devices10%
H10DInorganic electric semiconductor devices10%
G05FSystems for regulating electric or magnetic variables7%
G06FElectric digital data processing7%
H02MApparatus for conversion between ac and ac, between ac and dc, or between dc and dc, and for use with mains or similar power supply systems7%
H03LAutomatic control, starting, synchronisation or stabilisation of generators of electronic oscillations or pulses3%
PatentTitleYear
7,143,257'Method and apparatus of a smart decoding scheme for fast synchronous read in a memory system'20067,099,226'Functional register decoding system for multiple plane operation'20065,973,967'Page buffer having negative voltage level shifter'19995,912,842'Nonvolatile PMOS two transistor memory cell and array'19995,907,484'Charge pump'19995,903,497'Integrated program verify page buffer'19995,889,440'Adaptive frequency compensation technique'19995,798,967'Sensing scheme for non-volatile memories'19985,796,656'Row decoder circuit for PMOS non-volatile memory cell which uses electron tunneling for programming and erasing'19985,781,471'PMOS non-volatile latch for storage of redundancy addresses'19985,777,926'Row decoder circuit for PMOS non-volatile memory cell which uses channel hot electrons for programming'19985,774,406'Switching circuit for controlled transition between high program and erase voltages and a power supply voltage for memory cells'19985,696,728'Negative voltage level shift circuit'19975,687,116'Programming pulse ramp control circuit'19975,625,211'Two-transistor electrically-alterable switch employing hot electron injection and fowler nordheim tunneling'19975,625,544'Charge pump'19975,587,603'Two-transistor zero-power electrically-alterable non-volatile latch'19965,576,568'Single-transistor electrically-alterable switch employing fowler nordheim tunneling for program and erase'19964,975,878'Programmable memory data protection scheme'19904,873,671'Sequential read access of serial memories with a user defined starting address'19894,858,185'Zero power, electrically alterable, nonvolatile latch'1989Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
1989–1990Patents assigned to NAT SEMICONDUCTOR CORP (3)· patent assignee history
1989–1999Based in San Jose, CA, US· patent location history
1996–1997Patents assigned to ACTEL CORP (3)· patent assignee history
1996–1998Based in Fremont, CA, US· patent location history
1997–1999Patents assigned to PROGRAMMABLE MICROELECTRONICS (12)· patent assignee history
1998Patents assigned to PROGRAMMABLE MICROELECTRONICS CORP (1)· patent assignee history
2006Patents assigned to ATMEL CORP (2)· patent assignee history
2006Based in Cupertino, CA, US· patent location history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| PROGRAMMABLE MICROELECTRONICS | 12 | 1997–1999 |
| ACTEL CORP | 3 | 1996–1997 |
| NAT SEMICONDUCTOR CORP | 3 | 1989–1990 |
| ATMEL CORP | 2 | 2006 |
| PROGRAMMABLE MICROELECTRONICS CORP | 1 | 1998 |
Locations
| Location | Patents | Span |
|---|---|---|
| San Jose, California, US | 14 | 1989–1999 |
| Fremont, California, US | 5 | 1996–1998 |
| Cupertino, California, US | 2 | 2006 |