Inventor
Wei-Hang Huang
Inventor
Kaohsiung, TW
Overview
Patents· 27 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
H01Lprimary
H01LSemiconductor devices25%
H10BElectronic memory devices17%
H10DInorganic electric semiconductor devices17%
H10NElectric solid-state devices not otherwise provided for17%
G11CStatic stores10%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h108%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h106%
PatentTitleYear
10,840,438Reversed stack MTJ202010,825,825Flash memory structure202010,529,916Reversed stack MTJ202010,355,011Method for forming flash memory structure201910,181,558Magnetoresistive random access memory structure and method of forming the same20199,859,295'Method for forming flash memory structure'20189,685,604'Magnetoresistive random access memory cell and fabricating the same'20179,620,372'HK embodied flash memory and methods of forming the same'20179,614,145'Reversed stack MTJ'20179,608,195'Magnetic tunnel junction device'20179,595,661'Magnetoresistive random access memory structure and method of forming the same'20179,564,448'Flash memory structure'20179,397,228'Semiconductor device structure and method for forming the same'20169,391,085'Self-aligned split gate flash memory having liner-separated spacers above the memory gate'20169,306,158'MRAM device and fabrication method thereof'20169,196,825'Reversed stack MTJ'20159,172,033'MRAM device and fabrication method thereof'20159,142,761'Method for fabricating a magnetic tunnel junction device'20159,136,393'HK embodied flash memory and methods of forming the same'20159,048,316'Flash memory structure and method of forming the same'20158,822,237'Hole first hardmask definition'20148,728,949'Method for fabricating a semiconductor device'20148,723,274'Semiconductor device and method for fabricating the same'20148,569,849'Hole first hardmask definition'20138,519,487'Semiconductor device'20138,313,959'Hole first hardmask definition'20127,829,472'Method of forming at least an opening using a tri-layer structure'2010Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
2010–2014Patents assigned to UNITED MICROELECTRONICS CORP (4)· patent assignee history
2010–2020Based in Kaohsiung, TW· patent location history
2012–2016Patents assigned to TAIWAN SEMICONDUCTOR MFG (7)· patent assignee history
2012–2014Patents assigned to HUANG WEI-HANG (4)· patent assignee history
2012–2013Patents assigned to HSU CHERN-YOW (2)· patent assignee history
2015–2020Patents assigned to TAIWAN SEMICONDUCTOR MFG CO LTD (16)· patent assignee history
2017Based in Kaohisung, TW· patent location history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| TAIWAN SEMICONDUCTOR MFG CO LTD | 16 | 2015–2020 |
| TAIWAN SEMICONDUCTOR MFG | 7 | 2012–2016 |
| HUANG WEI-HANGself | 4 | 2012–2014 |
| UNITED MICROELECTRONICS CORP | 4 | 2010–2014 |
| HSU CHERN-YOW | 2 | 2012–2013 |
Locations
| Location | Patents | Span |
|---|---|---|
| Kaohsiung, TW | 26 | 2010–2020 |
| Kaohisung, TW | 1 | 2017 |