Inventor
Hellmut Ahne
Inventor
Rottenbach, DE
Overview
Patents· 61 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
G03Fprimary
G03FPhotomechanical production of textured or patterned surfaces, e.g. for printing, for processing of semiconductor devices36%
C08GMacromolecular compounds obtained otherwise than by reactions only involving unsaturated carbon-to-carbon bonds22%
Y10STechnical subjects covered by former uspc cross-reference art collections [xracs] and digests13%
Y10TTechnical subjects covered by former us classification5%
C08LCompositions of macromolecular compounds4%
H01BCables4%
C03CChemical composition of glasses, glazes or vitreous enamels3%
C07DHeterocyclic compounds2%
G02FOptical devices or arrangements for the control of light by modification of the optical properties of the media of the elements involved therein2%
C08FMacromolecular compounds obtained by reactions only involving carbon-to-carbon unsaturated bonds2%
PatentTitleYear
6,110,637'Photoresists which are suitable for producing sub-micron size structures'20005,973,202'Preparation of poly-o-hydroxyamides and poly o-mercaptoamides'19995,922,825'Preparation of poly-o-hydroxyamides and poly o-mercaptoamides'19995,883,221'Synthesis of polybenzoxasole and polybenzothiazole precursors'19995,807,969'Preparation of poly-O-hydroxyamides and poly O-mercaptoamides'19985,783,654'Preparation of poly-O-hydroxyamides and poly O-mercaptoamides'19985,777,066'Method for the production of poly-o-hydroxyamides'19985,760,162'Preparation of poly-o-hydroxyamides and poly-o-mercaptoamides'19985,750,711'Dicarboxylic acid derivatives'19985,750,638'Method for the production of poly-o-hydroxyamides'19985,733,706'Dry-developable positive resist'19985,726,279'Preparation of poly-o-hydroxyamides and poly o-mercaptoamides'19985,703,186'Mixed polymers'19975,696,218'Preparation of poly-o-hydroxyamides and poly-o-mercaptoamides'19975,688,631'Methods for producing polybenzoxazol precursors and corresponding resist solutions'19975,616,667'Copolymers'19975,556,812'Connection and build-up technique for multichip modules'19965,384,220'Production of photolithographic structures'19955,376,499'Highly heat-resistant positive resists comprising end-capped hydroxypolyamides'19945,278,277'Phenylquinoxaline copolymers'19945,275,920'Method of dry development utilizing quinone diazide and basic polymer resist with latent image intensification through treatment with silicon-organic compound in water'19945,262,283'Method for producing a resist structure'19935,250,375'Photostructuring process'19935,234,793'Method for dimensionally accurate structure transfer in bilayer technique wherein a treating step with a bulging agent is employed after development'19935,234,794'Photostructuring method'19935,229,258'Method for producing a resist structure'19935,194,629'Process for producing N-tertiary butoxycarbonyl-maleinimide'19935,173,393'Etch-resistant deep ultraviolet resist process having an aromatic treating step after development'19925,147,961'Preparation of hydroxypolyamides'19925,104,773'Preparing highly thermoresistant relief structures'19925,081,000'Photosensitive mixture'19925,040,090'Capacitive moisture-sensor'19914,975,347'Method for manufacturing heat-stable structured layers from photopolymers which are addition reaction products of olefinic unsaturated monoisocyanates and phenol-formaldehyde resins'19904,965,134'Method for manufacturing highly heat-resistant dielectrics'19904,883,730'Method for manufacturing heat-stable structured layers based on expoxy resin'19894,849,051'Heat resistant positive resists and method for preparing heat-resistant relief structures'19894,828,948'Method for the production of heat-resistant structured layers'19894,801,681'Method for the manufacture of polyimidazole and polyimidazo-pyrrolone precursors from tetra carboxylic acid moiety reactant'19894,732,951'Polyether-based photopolymers'19884,656,244'Method for the manufacture of polyimidazole and polyimidazopyrrolone precursors'19874,654,415'Method for the preparation of polyimide and polyisoindoloquinazoline dione precursors'19874,622,285'Method for manufacturing polyoxazole and polythiazole precursors'19864,619,500'Method for producing orientation layers for liquid crystal displays and liquid crystal displays having orientation layers'19864,610,947'Method and manufacturing polyimidazole and polyimidazopyrrolone relief structures'19864,598,038'Preparation of polyimide and polyisoindoloquinazoline dione relief structures'19864,590,103'Method for the preparation of thin polyimide film'19864,514,043'Method for the preparation of orientation layers for liquid crystal displays and liquid crystal displays having orientation layers'19854,398,009'Polyoxazole precursor and the preparation thereof'19834,397,999'Polyimidazole and polyimidazopyrrolone precursor stages and the preparation thereof'19834,395,482'Method for the preparation of heat-resistant relief structures using positive resists'19834,385,165'Polyimide, polyisoindoloquinazoline dione, polyoxazine dione and polyquinazoline dione precursor stages and the manufacture'19834,371,685'Radiation-reactive precursor stages of highly heat-resistant polymers'19834,366,230'Method for the preparation of highly heat-resistant relief structures and the use thereof'19824,339,521'Heat resistant positive resists containing polyoxazoles'19824,332,883'Method for the manufacture of highly heat-resistant relief structures'19824,332,882'Method for the preparation of highly heat-resistant relief'19824,329,556'N-Azidosulfonylaryl-maleinimides'19824,311,785'Method for the preparation of highly heat-resistant relief structures and the use thereof'19824,302,233'Method for the manufacture of a high-tensile-strength light wave-guide'19814,292,398'Method for the preparation of relief structures by phototechniques'19814,287,294'Method for the preparation of relief structures by phototechniques'1981Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
1981–1999Patents assigned to SIEMENS AG (59)· patent assignee history
1981–1999Based in Rottenbach, DE· patent location history
1989–2000Based in Roettenbach, DE· patent location history
1998Patents assigned to SIEMENS AKTIENGESESLLSCHAFT (1)· patent assignee history
2000Patents assigned to SIEMENS AKTINEGESELLSCHAFT (1)· patent assignee history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| SIEMENS AG | 59 | 1981–1999 |
| SIEMENS AKTIENGESESLLSCHAFT | 1 | 1998 |
| SIEMENS AKTINEGESELLSCHAFT | 1 | 2000 |
Locations
| Location | Patents | Span |
|---|---|---|
| Rottenbach, DE | 34 | 1981–1999 |
| Roettenbach, DE | 27 | 1989–2000 |