Inventor
Li-ting WANG
Inventor
TW
Overview
Patents· 26 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
H01Lprimary
H01LSemiconductor devices21%
H10DInorganic electric semiconductor devices20%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1020%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h1015%
B82YSpecific uses or applications of nanostructures6%
C23CCoating metallic material3%
C30BSingle-crystal growth2%
A01KAnimal husbandry1%
B23KSoldering or unsoldering1%
C07BGeneral methods of organic chemistry1%
PatentTitleYear
12,486,597Apparatus and method for use with a substrate chamber202512,480,223Apparatus and method for use with a substrate chamber202512,469,717Systems, methods, and semiconductor devices202512,451,390Trench filling through reflowing filling material202512,414,338Nanostructure FET and method of forming same202512,399,067Apparatus, system, and method for measuring the temperature of a substrate202512,369,394Semiconductor device and method of forming same202512,349,435Vertical device having a protrusion source202512,154,949Transistor contacts and methods of forming the same202412,074,026Integrated photoresist removal and laser annealing202411,996,412Semiconductor device and method of forming same202411,955,553Source/drain structure202411,916,131Vertical device having a protrusion source202411,855,146Melt anneal source and drain regions202311,800,857Liver lesion-mouse model202311,695,042Transistor contacts and methods of forming the same202311,605,555Trench filling through reflowing filling material202311,605,635Semiconductor device and method of forming same202311,594,636Source/drain structure202311,532,516Melting laser anneal of epitaxy regions202211,444,028Contact structure and formation thereof202211,395,373Wafer holder with tapered region202211,384,054Crystalline form of ivacaftor and a process for preparing the same202211,257,952Source/drain structure202211,227,918Melt anneal source and drain regions202211,227,788Method of forming isolation layer2022Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
2022–2025Patents assigned to TAIWAN SEMICONDUCTOR MFG CO LTD (24)· patent assignee history
2022Patents assigned to SCINOPHARM TAIWAN LTD (1)· patent assignee history
2022–2025Based in TW· patent location history
2023Patents assigned to UNIV KAOHSIUNG MEDICAL (1)· patent assignee history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| TAIWAN SEMICONDUCTOR MFG CO LTD | 24 | 2022–2025 |
| SCINOPHARM TAIWAN LTD | 1 | 2022 |
| UNIV KAOHSIUNG MEDICAL | 1 | 2023 |
Locations
| Location | Patents | Span |
|---|---|---|
| TW | 26 | 2022–2025 |