Inventor
Yeong-kwan Kim
Inventor
Kyungki-do, KR
Overview
Patents· 18 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
H10Pprimary
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1033%
H10DInorganic electric semiconductor devices23%
H10BElectronic memory devices17%
C23CCoating metallic material12%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h108%
C30BSingle-crystal growth2%
H05BElectric heating2%
H10KOrganic electric solid-state devices2%
Y10TTechnical subjects covered by former us classification2%
PatentTitleYear
7,547,952'Method for hafnium nitride deposition'20097,544,607'Semiconductor device having thin film formed by atomic layer deposition and method for fabricating the same'20097,316,954'Methods of fabricating integrated circuit devices that utilize doped poly-Si1−xGex conductive plugs as interconnects'20087,052,918'Multi-layer film for thin film structure, capacitor using the same and fabrication method thereof'20066,833,310'Semiconductor device having thin film formed by atomic layer deposition and method for fabricating the same'20046,828,616'Integrated circuit devices that utilize doped Poly-Si1xGex conductive plugs as interconnects'20046,828,218'Method of forming a thin film using atomic layer deposition'20046,576,053'Method of forming thin film using atomic layer deposition method'20036,570,253'Multi-layer film for a thin film structure and a capacitor using the same'20036,509,601'Semiconductor memory device having capacitor protection layer and method for manufacturing the same'20036,489,214'Method for forming a capacitor of a semiconductor device'20026,468,924'Methods of forming thin films by atomic layer deposition'20026,391,803'Method of forming silicon containing thin films by atomic layer deposition utilizing trisdimethylaminosilane'20026,335,240'Capacitor for a semiconductor device and method for forming the same'20026,270,572'Method for manufacturing thin film using atomic layer deposition'20016,207,487'Method for forming dielectric film of capacitor having different thicknesses partly'20016,162,501'Method for manufacturing thin films of multi-element group oxide or nitride'20006,144,060'Integrated circuit devices having buffer layers therein which contain metal oxide stabilized by heat treatment under low temperature'2000Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
2000–2009Patents assigned to SAMSUNG ELECTRONICS CO LTD (17)· patent assignee history
2000–2008Based in Kyungki-do, KR· patent location history
2001–2006Based in Seongnam, KR· patent location history
2002–2009Based in Suwon-si, KR· patent location history
2003Based in Sungnam, KR· patent location history
2009Patents assigned to APPLIED MATERIALS INC (1)· patent assignee history
2009Based in Pleasanton, CA, US· patent location history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| SAMSUNG ELECTRONICS CO LTD | 17 | 2000–2009 |
| APPLIED MATERIALS INC | 1 | 2009 |
Locations
| Location | Patents | Span |
|---|---|---|
| Kyungki-do, KR | 6 | 2000–2008 |
| Seongnam, KR | 6 | 2001–2006 |
| Suwon-si, KR | 4 | 2002–2009 |
| Pleasanton, California, US | 1 | 2009 |
| Sungnam, KR | 1 | 2003 |