Inventor
Christian Gruensfelder
Inventor
Dresden, DE
Overview
Patents· 5 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
H10Dprimary
H10DInorganic electric semiconductor devices45%
H01LSemiconductor devices36%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1018%
PatentTitleYear
9,472,554'Integrated circuits having FinFET semiconductor devices and methods of fabricating the same to resist sub-fin current leakage'20169,437,740'Epitaxially forming a set of fins in a semiconductor device'20169,142,674'FINFET devices having a body contact and methods of forming the same'20159,034,737'Epitaxially forming a set of fins in a semiconductor device'20158,809,178'Methods of forming bulk FinFET devices with replacement gates so as to reduce punch through leakage currents'2014Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
2014–2016Patents assigned to GLOBALFOUNDRIES INC (5)· patent assignee history
2014Patents assigned to GRUENSFELDER CHRISTIAN (1)· patent assignee history
2014Patents assigned to HARGROVE MICHAEL (1)· patent assignee history
2014Patents assigned to KANG LAEGU (1)· patent assignee history
2014Patents assigned to LIU YANXIANG (1)· patent assignee history
2014Based in Hopewell Junction, NY, US· patent location history
2015–2016Based in Dresden, DE· patent location history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| GLOBALFOUNDRIES INC | 5 | 2014–2016 |
| GRUENSFELDER CHRISTIANself | 1 | 2014 |
| HARGROVE MICHAEL | 1 | 2014 |
| KANG LAEGU | 1 | 2014 |
| LIU YANXIANG | 1 | 2014 |
Locations
| Location | Patents | Span |
|---|---|---|
| Dresden, DE | 4 | 2015–2016 |
| Hopewell Junction, New York, US | 1 | 2014 |