Inventor
Grigory Simin
Inventor
Columbia, SC, US
Overview
Patents· 58 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
H10Dprimary
H10DInorganic electric semiconductor devices27%
H01LSemiconductor devices26%
H10HInorganic light-emitting semiconductor devices having potential barriers11%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h109%
G06FElectric digital data processing6%
H01SDevices using the process of light amplification by stimulated emission of radiation [laser] to amplify or generate light3%
H05BElectric heating3%
H01HElectric switches2%
H01PWaveguides2%
H10FInorganic semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation2%
PatentTitleYear
10,964,862Semiconductor heterostructure with multiple active regions202110,790,410Light extraction from optoelectronic device202010,693,035Optoelectronic device with a nanowire semiconductor layer202010,593,839Solid-state light source with small area contact202010,587,096Access resistance modulated solid-state light source202010,586,890Opto-electronic device with two-dimensional injection layers202010,483,387Lateral/vertical semiconductor device with embedded isolator201910,276,749Ultraviolet reflective rough adhesive contact201910,256,334Gateless switch with capacitively-coupled contacts201910,237,929Solid-state lighting source with integrated electronic modulator201910,224,408Perforating contact to semiconductor layer201910,190,973Integrated ultraviolet analyzer201910,178,726Solid-state lighting structure with integrated control201910,090,438Opto-electronic device with two-dimensional injection layers201810,002,862Solid-state lighting structure with integrated short-circuit protection20189,991,372Device with channel having varying carrier concentration20189,948,062Solid-state lighting structure with light modulation control20189,894,723'Solid-state lighting structure with integrated control'20189,887,267'Normally-off field effect transistor'20189,806,184'Semiconductor device with low-conducting field-controlling element'20179,768,357'Ultraviolet reflective rough adhesive contact'20179,748,362'High-voltage normally-off field effect transistor with channel having multiple adjacent sections'20179,741,802'Semiconductor device with breakdown preventing layer'20179,673,285'Semiconductor device with low-conducting buried and/or surface layers'20179,660,038'Lateral/vertical semiconductor device'20179,660,043'Ohmic contact to semiconductor layer'20179,647,076'Circuit including semiconductor device with multiple individually biased space-charge control electrodes'20179,601,611'Lateral/vertical semiconductor device with embedded isolator'20179,467,105'Perforated channel field effect transistor'20169,391,189'Lateral/vertical semiconductor device'20169,349,848'Gateless switch with capacitively-coupled contacts'20169,312,347'Semiconductor device with multiple space-charge control electrodes'20169,263,533'High-voltage normally-off field effect transistor including a channel with a plurality of adjacent sections'20169,256,240'Semiconductor device with multiple space-charge control electrodes'20169,190,510'Semiconductor device with breakdown preventing layer'20159,178,025'Low-resistance electrode design'20159,166,048'Lateral/vertical semiconductor device'20158,994,035'Semiconductor device with low-conducting buried and/or surface layers'20158,969,198'Ohmic contact to semiconductor layer'20158,878,154'Semiconductor device with multiple space-charge control electrodes'20148,846,473'Low-resistance electrode design'20148,692,293'Method to increase breakdown voltage of semiconductor devices'20148,643,430'Device and circuit with improved linearity'20148,587,028'Gateless switch with capacitively-coupled contacts'20138,586,997'Semiconductor device with low-conducting field-controlling element'20138,552,562'Profiled contact for semiconductor device'20138,525,226'Field effect transistor with frequency dependent gate-channel capacitance'20138,461,631'Composite contact for semiconductor device'20138,395,392'Parameter extraction using radio frequency signals'20138,338,871'Field effect transistor with electric field and space-charge control contact'20128,339,163'Field effect transistor with integrated gate control and radio frequency switch'20128,318,562'Method to increase breakdown voltage of semiconductor devices'20128,299,835'Radio-frequency switch circuit with separately controlled shunt switching device'20128,168,497'Low-resistance electrode design'20128,030,575'Mounting structure providing electrical surge protection'20117,674,666'Fabrication of semiconductor device having composite contact'20107,655,962'Enhancement mode insulated gate heterostructure field-effect transistor with electrically isolated RF-enhanced source contact'20107,547,939'Semiconductor device and circuit having multiple voltage controlled capacitors'2009Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
2009–2021Patents assigned to SENSOR ELECTRONIC TECH INC (55)· patent assignee history
2009–2021Based in Columbia, SC, US· patent location history
2012–2014Patents assigned to SIMIN GRIGORY (13)· patent assignee history
2012–2014Patents assigned to SHUR MICHAEL (12)· patent assignee history
2012–2014Patents assigned to GASKA REMIGIJUS (11)· patent assignee history
2012Patents assigned to KOUDYMOV ALEXEI (2)· patent assignee history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| SENSOR ELECTRONIC TECH INC | 55 | 2009–2021 |
| SIMIN GRIGORYself | 13 | 2012–2014 |
| SHUR MICHAEL | 12 | 2012–2014 |
| GASKA REMIGIJUS | 11 | 2012–2014 |
| KOUDYMOV ALEXEI | 2 | 2012 |
Locations
| Location | Patents | Span |
|---|---|---|
| Columbia, SC, US | 58 | 2009–2021 |