Inventor
Karl Hofmann
Inventor
Netphen, DE
Overview
Patents· 17 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
B21Cprimary
B21CManufacture of metal sheets, wire, rods, tubes, profiles or like semi-manufactured products otherwise than by rolling15%
H10DInorganic electric semiconductor devices15%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h109%
B22DCasting of metals6%
B24BMachines, devices, or processes for grinding or polishing6%
B65BMachines, apparatus or devices for, or methods of, packaging articles or materials6%
F16MFrames, casings or beds of engines, machines or apparatus, not specific to engines, machines or apparatus provided for elsewhere6%
H03LAutomatic control, starting, synchronisation or stabilisation of generators of electronic oscillations or pulses6%
H04NPictorial communication, e.g. television6%
Y10TTechnical subjects covered by former us classification6%
PatentTitleYear
9,770,748'Apparatus and method for sampling thick strips'20179,744,577'Asymmetric coil support'20179,346,090'Method and device for depositing a metal coil'20169,289,809'Device and method for handling a metal strip'20168,900,035'Method and device for grinding a continuous casting product'20148,820,227'Strapping machine for tying packages, in particular metal strips wound into coils'20148,657,651'Apparatus for grinding a continuously cast workpiece'20148,555,476'Method and device for depositing a metal coil'20137,132,897'Method and circuit for producing a control voltage for a VCO'20067,129,791'Circuit and method for faster frequency switching in a phase locked loop'20065,978,101'Image detection device'19995,917,544'Sensor element array and method for signal or image processing'19995,606,190'Microelectronic circuit structure having improved structural fineness and method for manufacturing same'19975,559,353'Integrated circuit structure having at least one CMOS-NAND gate and method for the manufacture thereof'19965,443,992'Method for manufacturing an integrated circuit having at least one MOS transistor'19954,855,797'Modulation doped high electron mobility transistor with n-i-p-i structure'19894,784,975'Post-oxidation anneal of silicon dioxide'1988Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
1988–2006Based in Ulm, DE· patent location history
1989Based in Kingston, NJ, US· patent location history
1995–1996Based in Wennigsen, DE· patent location history
1997Based in Putzbrunn, DE· patent location history
2013–2017Patents assigned to HOFMANN KARL ROBERT (7)· patent assignee history
2013–2016Patents assigned to CRAMER ULRICH (3)· patent assignee history
2013–2016Patents assigned to FUCHS WOLFGANG (3)· patent assignee history
2013–2016Patents assigned to HEIDE CARSTEN (3)· patent assignee history
2013–2017Based in Netphen, DE· patent location history
2014–2017Patents assigned to SMS LOGISTIKSYSTEME GMBH (5)· patent assignee history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| HOFMANN KARL ROBERTself | 7 | 2013–2017 |
| SMS LOGISTIKSYSTEME GMBH | 5 | 2014–2017 |
| CRAMER ULRICH | 3 | 2013–2016 |
| FUCHS WOLFGANG | 3 | 2013–2016 |
| HEIDE CARSTEN | 3 | 2013–2016 |
Locations
| Location | Patents | Span |
|---|---|---|
| Netphen, DE | 8 | 2013–2017 |
| Ulm, DE | 5 | 1988–2006 |
| Wennigsen, DE | 2 | 1995–1996 |
| Putzbrunn, DE | 1 | 1997 |
| Kingston, New Jersey, US | 1 | 1989 |