Inventor

Takaaki Kawahara

Inventor
Hyogo, JP

Overview

31→
Patents
1997–2016
Patent span
Electricity
Primary field (CPC H)

Patents· 31 as inventor

Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.

C23Cprimary
C23CCoating metallic material31%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1029%
H10DInorganic electric semiconductor devices23%
Y10STechnical subjects covered by former uspc cross-reference art collections [xracs] and digests9%
C30BSingle-crystal growth3%
H01LSemiconductor devices3%
H10BElectronic memory devices3%
PatentTitleYear
9,455,264'Semiconductor device and manufacturing method thereof'20169,105,739'Semiconductor device and manufacturing method thereof'20158,293,632'Manufacturing method of semiconductor device'20128,120,118'Semiconductor device and manufacturing method of the same'20127,855,134'Semiconductor device and manufacturing method of the same'20107,268,047'Semiconductor device and method for manufacturing the same'20077,087,495'Method for manufacturing semiconductor device'20067,034,369'Semiconductor device and method for manufacturing the same'20066,984,565'Method of manufacturing a semiconductor device'20066,638,880'Chemical vapor deposition apparatus and a method of manufacturing a semiconductor device'20036,512,885'Liquid raw material vaporizer, semiconductor device and method of manufacturing semiconductor device'20036,470,144'Vaporizer for chemical vapor deposition apparatus, chemical vapor deposition apparatus, and semiconductor device manufactured thereby'20026,448,191'Method of forming high dielectric constant thin film and method of manufacturing semiconductor device'20026,312,526'Chemical vapor deposition apparatus and a method of manufacturing a semiconductor device'20016,273,957'Vaporizing device for CVD source materials and CVD apparatus employing the same'20016,235,649'Method of forming high dielectric constant thin film and method of manufacturing semiconductor device'20016,179,920'CVD apparatus for forming thin film having high dielectric constant'20016,165,556'High dielectric constant thin film structure, method for forming high dielectric constant thin film, and apparatus for forming high dielectric constant thin film'20006,117,482'Method and apparatus for monitoring CVD liquid source for forming thin film with high dielectric constant'20006,110,283'Chemical vapor deposition apparatus'20006,110,291'Thin film forming apparatus using laser'20006,101,085'High dielectric constant thin film structure, method for forming high dielectric constant thin film, and apparatus for forming high dielectric constant thin film'20006,096,133'Chemical vapor deposition apparatus'20006,033,732'Apparatus for and method of forming thin film by chemical vapor deposition'20006,022,811'Method of uniform CVD'20005,989,635'High dielectric constant thin film structure, method for forming high dielectric constant thin film and apparatus for forming high dielectric constant thin film'19995,882,410'High dielectric constant thin film structure, method for forming high dielectric constant thin film, and apparatus for forming high dielectric constant thin film'19995,834,060'High dielectric constant thin film structure method for forming high dielectric constant thin film and apparatus for forming high dielectric contact thin film'19985,776,254'Apparatus for forming thin film by chemical vapor deposition'19985,760,366'Thin film forming apparatus using laser and magnetic field'19985,669,976'CVD method and apparatus therefor'1997

Career & activity timeline

Assembled from patent assignee/location history and declaration credentials.

1997–2003Patents assigned to MITSUBISHI ELECTRIC CORP (21)· patent assignee history
1997–2003Based in Hyogo, JP· patent location history
1998–2012Based in Tokyo, JP· patent location history
2006Patents assigned to RENESAS TECH CORP (2)· patent assignee history
2006–2007Based in Ibaraki, JP· patent location history
2010–2016Patents assigned to RENESAS ELECTRONICS CORP (5)· patent assignee history
2012Patents assigned to KAWAHARA TAKAAKI (2)· patent assignee history
2012Patents assigned to SAKASHITA SHINSUKE (2)· patent assignee history
2015Based in Kanagawa, JP· patent location history
2016Based in Kawasaki, JP· patent location history

Inventor activity

Assignee and location history derived from the patent record.

Assignees
AssigneePatentsSpan
MITSUBISHI ELECTRIC CORP211997–2003
RENESAS ELECTRONICS CORP52010–2016
KAWAHARA TAKAAKIself22012
RENESAS TECH CORP22006
SAKASHITA SHINSUKE22012
Locations
LocationPatentsSpan
Hyogo, JP131997–2003
Tokyo, JP121998–2012
Ibaraki, JP32006–2007
Kawasaki, JP12016
Kanagawa, JP12015