Inventor

ENG HUAT TOH

Inventor

SG

Overview

2021–2026

Patent span

Electricity

Primary field (CPC H)

Patents· 86 as inventor

Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.

H10Bprimary

H10BElectronic memory devices23%

H01LSemiconductor devices22%

H10NElectric solid-state devices not otherwise provided for14%

H10DInorganic electric semiconductor devices11%

G11CStatic stores8%

G01RMeasuring electric variables6%

H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h105%

H10FInorganic semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation4%

G01NInvestigating or analysing materials by determining their chemical or physical properties2%

H01FMagnets1%

PatentTitleYear

12,581,942Electronic fuses with an airgap under the fuse link2026 12,568,631Three terminal memory cells and method of making the same2026 12,557,563Layer stacks for a resistive memory element2026 12,543,385Single-photon avalanche diode with isolated junctions2026 12,527,237Electrodes of semiconductor memory devices having corners of acute angles2026 12,510,612Current sensor for printed circuit board2025 12,490,425Wrap-around memory circuit2025 12,490,660Structures for three-terminal memory cells2025 12,446,266Fe-FET structure with buried electrode2025 12,387,785Structures for three-terminal memory cells2025 12,363,892Non-volatile memory elements with one-time or multiple-time programmability2025 12,349,608Memory devices and methods of making the same2025 12,324,252Structures including a photodetector and multiple cathode contacts2025 12,266,671Photodetectors with a deep trench isolation region that includes a bragg mirror2025 12,224,368Optoelectronic device including photodiode having buried layer with different thicknesses2025 12,201,039Non-volatile memory device with filament confinement2025 12,193,243Lateral multi-bit memory devices and methods of making the same2025 12,183,754Single-photon avalanche diodes with deep trench isolation2024 12,156,476Programmable magnetic tunnel junction2024 12,154,854Electronic fuses with a silicide layer having multiple thicknesses2024 12,101,944Semiconductor memory devices2024 12,051,761Multi-semiconductor layer photodetector and related method2024 12,032,041Magnetic field sensor2024 11,991,938Memory devices and methods of forming memory devices2024 11,967,664Photodiodes with serpentine shaped electrical junction2024 11,901,425Non-volatile memory devices with asymmetrical floating gates2024 11,856,875Memory devices and methods for fabricating memory devices2023 11,844,292Memory devices having an electrode with tapered sides2023 11,839,166RRAM devices and methods of forming RRAM devices2023 11,823,889Sensor and method of forming the same2023 11,821,924On-chip current sensor2023 11,810,982Nonvolatile memory device with a doped region between a source and a drain and integration schemes2023 11,793,004Resistive random access memory devices2023 11,791,083Tunnel magneto-resistive (TMR) sensor with perpendicular magnetic tunneling junction (p-MTJ) structures2023 11,784,196Trenchless single-photon avalanche diodes2023 11,774,402Sensor devices2023 11,761,983Probe card integrated with a hall sensor2023 11,762,042Magnetic field sensor and methods of fabricating a magnetic field sensor2023 11,747,412Magnetic field sensor using magnetic tunneling junction (MTJ) structures and passive resistors2023 11,744,166Resistive memory elements with multiple input terminals2023 11,719,773Magnetic field sensor with MTJ elements arranged in series2023 11,721,731Nonvolatile memory having multiple narrow tips at floating gate2023 11,659,709Single well one transistor and one capacitor nonvolatile memory device and integration schemes2023 11,646,360OTP-MTP on FDSOI architecture and method for producing the same2023 11,641,739Semiconductor non-volatile memory devices2023 11,600,664Memory devices and methods of forming memory devices2023 11,585,703On-chip temperature sensing with non-volatile memory elements2023 11,574,758Magnetic field sensor using different magnetic tunneling junction (MTJ) structures2023 11,552,128Memory device, memory array and method of forming the same2023 11,513,175Tunnel magnetoresistance sensor devices and methods of forming the same2022 11,515,314One transistor two capacitors nonvolatile memory cell2022 11,500,041Hall effect sensors2022 11,502,127Semiconductor memory devices2022 11,502,250Memory devices and methods of forming memory devices2022 11,495,608Multi-finger gate nonvolatile memory cell2022 11,476,303Multi-level cell configurations for non-volatile memory elements in a bitcell2022 11,462,552Semiconductor devices with memory cells2022 11,450,677Partially silicided nonvolatile memory devices and integration schemes2022 11,444,125Memory devices and methods of forming memory devices2022 11,437,392Compact memory cell with a shared conductive select gate and methods of making such a memory cell2022 11,404,549Split gate flash memory cells with a trench-formed select gate2022 11,398,525Resistive memory elements having conductive islands embedded within the switching layer2022 11,393,979Non-volatile memory elements with filament confinement2022 11,380,703Memory structures and methods of forming memory structures2022 11,372,061Hall effect sensor devices and methods of forming hall effect sensor devices2022 11,374,135Sensor and method of forming the same2022 11,355,599Devices with lower resistance and improved breakdown and method for producing the same2022 11,349,071Memory device and a method for forming the memory device2022 11,335,852Resistive random access memory devices2022 11,327,045Sensor device for detecting a pH change in a solution and a method for forming the sensor device2022 11,320,417Nanogap sensors and methods of forming the same2022 11,313,827Sensor devices for detecting a pH change in a solution2022 11,309,324Compact memory cell with a shared conductive word line and methods of making such a memory cell2022 11,302,702Non-volatile memory elements with one-time or multiple-time programmability2022 11,289,649Non-volatile memory elements with a narrowed electrode2022 11,276,460Dye-sensitized optoelectronic memory2022 11,271,082Semiconductor devices with memory cells2022 11,245,067Hall sensors with a three-dimensional structure2022 11,227,924Dual bit memory device with triple gate structure2022 11,217,747Memory devices and methods of forming memory devices2022 11,211,550Magnetic memory devices with magnetic field sensing and shielding2021 11,211,555Memory device and a method for forming the memory device2021 11,205,478Memory device and a method for forming the memory device2021 11,158,643Non-volatile memory bit cells with non-rectangular floating gates2021 11,152,380Memory device and a method for forming the memory device2021 11,139,311Semiconductor non-volatile memory devices2021

Career & activity timeline

Assembled from patent assignee/location history and declaration credentials.

2021–2026Patents assigned to GLOBALFOUNDRIES SG PTE LTD (85)· patent assignee history

2021–2026Based in SG· patent location history

2023Patents assigned to GLOBALFOUNDRIES US INC (1)· patent assignee history

2025Patents assigned to GLOBALFOUNDARIES SINGAPORE PTE LTD (1)· patent assignee history

Inventor activity

Assignee and location history derived from the patent record.

Assignees

Assignee	Patents	Span
GLOBALFOUNDRIES SG PTE LTD	85	2021–2026
GLOBALFOUNDARIES SINGAPORE PTE LTD	1	2025
GLOBALFOUNDRIES US INC	1	2023

Locations

Location	Patents	Span
SG	86	2021–2026