Inventor
David B. Spratt
Inventor
Plano, TX, US
Overview
Patents· 19 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
H10Dprimary
H10DInorganic electric semiconductor devices33%
Y10STechnical subjects covered by former uspc cross-reference art collections [xracs] and digests28%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h1019%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1017%
C25DProcesses for the electrolytic or electrophoretic production of coatings3%
PatentTitleYear
6,548,337'Method of manufacturing a high gain bipolar junction transistor with counterdoped base in CMOS technology'20036,143,594'On-chip ESD protection in dual voltage CMOS'20006,137,144'On-chip ESD protection in dual voltage CMOS'20005,434,432'Antifuse device for controlling current in a circuit using an antifuse'19955,316,957'Method of forming a recessed contact bipolar transistor'19945,284,788'Method and device for controlling current in a circuit'19945,075,241'Method of forming a recessed contact bipolar transistor and field effect device'19915,065,209'Bipolar transistor fabrication utilizing CMOS techniques'19915,041,394'Method for forming protective barrier on silicided regions'19915,019,525'Method for forming a horizontal self-aligned transistor'19914,985,744'Method for forming a recessed contact bipolar transistor and field effect transistor'19914,982,263'Anodizable strain layer for SOI semiconductor structures'19914,962,053'Bipolar transistor fabrication utilizing CMOS techniques'19904,897,703'Recessed contact bipolar transistor and method'19904,897,698'Horizontal structure thin film transistor'19904,891,103'Anadization system with remote voltage sensing and active feedback control capabilities'19904,849,370'Anodizable strain layer for SOI semiconductor structures'19894,810,667'Dielectric isolation using isolated silicon by limited anodization of an N+ epitaxially defined sublayer in the presence of a diffusion under film layer'19894,628,591'Method for obtaining full oxide isolation of epitaxial islands in silicon utilizing selective oxidation of porous silicon'1986Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
1986–2003Patents assigned to TEXAS INSTRUMENTS INC (19)· patent assignee history
1986–2003Based in Plano, TX, US· patent location history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| TEXAS INSTRUMENTS INC | 19 | 1986–2003 |
Locations
| Location | Patents | Span |
|---|---|---|
| Plano, Texas, US | 19 | 1986–2003 |