LexDanaLexDanabeta
Inventor

Kazuki Ota

Inventor
Tokyo, JP

Overview

30→
Patents
2003–2019
Patent span
Electricity
Primary field (CPC H)

Patents· 30 as inventor

Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.

H10Dprimary
H10DInorganic electric semiconductor devices61%
H01LSemiconductor devices23%
B62JCycle saddles or seats2%
F02BInternal-combustion piston engines2%
F02MSupplying combustion engines in general with combustible mixtures or constituents thereof2%
G06FElectric digital data processing2%
G08GTraffic control systems2%
H03FAmplifiers2%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h102%
PatentTitleYear
10,519,902Intake manifold20199,972,207Information collection system, communication device, and information generation method20189,954,087Field effect transistor, and multilayered epitaxial film for use in preparation of field effect transistor20189,780,738'Semiconductor device'20179,768,257'Semiconductor device'20179,582,528'System and method for operating a big-data platform'20179,530,879'Semiconductor device and field effect transistor with controllable threshold voltage'20169,231,096'Semiconductor device and field effect transistor with controllable threshold voltage'20168,981,434'Semiconductor device and field effect transistor'20158,928,038'Field effect transistor containing a group III nitride semiconductor as main component'20158,921,894'Field effect transistor, method for producing the same, and electronic device'20148,907,349'Semiconductor device and method of manufacturing the same'20148,853,666'Field effect transistor, and multilayered epitaxial film for use in preparation of field effect transistor'20148,772,785'Semiconductor device, schottky barrier diode, electronic apparatus, and method of producing semiconductor device'20148,716,835'Bipolar transistor'20148,680,580'Field effect transistor and process for manufacturing same'20148,674,409'Heterojunction field effect transistor, method for producing heterojunction field effect transistor, and electronic device'20148,674,407'Semiconductor device using a group III nitride-based semiconductor'20148,659,055'Semiconductor device, field-effect transistor, and electronic device'20148,618,578'Field effect transistor'20138,552,471'Semiconductor apparatus having reverse blocking characteristics and method of manufacturing the same'20138,466,495'Field effect transistor with reduced gate leakage current'20138,426,895'Semiconductor device and manufacturing method of the same'20138,395,237'Group nitride bipolar transistor'20138,378,387'Field effect transistor and method of manufacturing the same'20138,344,422'Semiconductor device'20138,198,652'Field effect transistor with reduced gate leakage current'20127,863,648'Field effect transistor'20117,800,131'Field effect transistor'20106,534,790'Compound semiconductor field effect transistor'2003

Career & activity timeline

Assembled from patent assignee/location history and declaration credentials.

2003–2018Based in Tokyo, JP· patent location history
2012–2017Patents assigned to OTA KAZUKI (19)· patent assignee history
2012–2015Patents assigned to OKAMOTO YASUHIRO (17)· patent assignee history
2012–2015Patents assigned to ANDO YUJI (15)· patent assignee history
2012–2015Patents assigned to INOUE TAKASHI (15)· patent assignee history
2013–2018Patents assigned to RENESAS ELECTRONICS CORP (16)· patent assignee history
2014–2017Based in Kanagawa, JP· patent location history
2017Based in Kawasaki, JP· patent location history
2018Based in Shinjuku-ku, JP· patent location history
2019Based in Nisshin, JP· patent location history

Inventor activity

Assignee and location history derived from the patent record.

Assignees
AssigneePatentsSpan
OTA KAZUKIself192012–2017
OKAMOTO YASUHIRO172012–2015
RENESAS ELECTRONICS CORP162013–2018
ANDO YUJI152012–2015
INOUE TAKASHI152012–2015
Locations
LocationPatentsSpan
Tokyo, JP202003–2018
Kanagawa, JP52014–2017
Nisshin, JP12019
Shinjuku-ku, JP12018
Kawasaki, JP12017