Inventor

Chihyuan Tseng

Inventor

Guangdong, CN

Overview

31→

Patents

2014–2020

Patent span

Electricity

Primary field (CPC H)

Patents· 31 as inventor

Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.

H01Lprimary

H01LSemiconductor devices30%

H10DInorganic electric semiconductor devices30%

H10KOrganic electric solid-state devices18%

H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1011%

G02FOptical devices or arrangements for the control of light by modification of the optical properties of the media of the elements involved therein7%

G09GArrangements or circuits for control of indicating devices using static means to present variable information3%

G09FDisplaying1%

PatentTitleYear

10,629,745Manufacturing method and structure of oxide thin film transistor2020 10,109,659TFT backplate structure comprising transistors having gate isolation layers of different thicknesses and manufacture method thereof2018 10,043,829TFT backplate structure and manufacture method thereof2018 9,947,737Pixel structure having high aperture ratio and circuit2018 9,947,699Manufacturing method of dual gate oxide semiconductor TFT substrate and substrate thereof2018 9,922,995'Structure of dual gate oxide semiconductor TFT substrate including TFT having top and bottom gates'2018 9,799,677'Structure of dual gate oxide semiconductor TFT substrate'2017 9,786,691'TFT substrate structure'2017 9,786,695'TFT substrate structure'2017 9,768,200'TFT backplate structure and manufacture method thereof'2017 9,768,324'Co-planar oxide semiconductor TFT substrate structure and manufacture method thereof'2017 9,768,323'Manufacture method of dual gate oxide semiconductor TFT substrate and structure thereof'2017 9,768,202'TFT backplate structure comprising transistors having gate isolation layers of different thicknesses and manufacture method thereof'2017 9,748,285'Manufacture method of dual gate oxide semiconductor TFT substrate and structure thereof'2017 9,728,125'AMOLED pixel circuit'2017 9,728,560'TFT substrate structure'2017 9,704,887'TFT substrate structure'2017 9,704,937'Pixel structure having high aperture ratio and circuit'2017 9,698,172'TFT substrate structure'2017 9,685,471'Manufacturing method of thin film transistor substrate'2017 9,634,032'Manufacture method of dual gate oxide semiconductor TFT substrate and structure thereof'2017 9,614,104'Co-planar oxide semiconductor TFT substrate structure and manufacture method thereof'2017 9,601,523'Dual gate TFT substrate structure utilizing COA skill'2017 9,589,995'TFT substrate having three parallel capacitors'2017 9,570,620'Manufacture method of dual gate oxide semiconductor TFT substrate and structure thereof'2017 9,543,442'Manufacture method of dual gate oxide semiconductor TFT substrate and structure thereof'2017 9,401,418'Method of manufacturing thin film transistor and organic light emitting diode display'2016 9,349,843'Method for manufacturing thin-film transistor'2016 9,117,912'IGZO transistor structure and manufacturing method for the same'2015 9,082,664'Method for manufacturing thin-film transistor substrate and thin-film transistor substrate manufactured with same'2015 8,912,542'TFT structure and LCD device'2014

Career & activity timeline

Assembled from patent assignee/location history and declaration credentials.

2014–2020Patents assigned to SHENZHEN CHINA STAR OPTOELECT (31)· patent assignee history

2014–2018Based in Shenzhen, CN· patent location history

2015–2020Based in Guangdong, CN· patent location history

Inventor activity

Assignee and location history derived from the patent record.

Assignees

Assignee	Patents	Span
SHENZHEN CHINA STAR OPTOELECT	31	2014–2020

Locations

Location	Patents	Span
Guangdong, CN	17	2015–2020
Shenzhen, CN	14	2014–2018