Inventor

Feng-Cheng Yang

Inventor

Hsinchu County, TW

Overview

2004–2021

Patent span

Electricity

Primary field (CPC H)

Patents· 57 as inventor

Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.

H10Dprimary

H10DInorganic electric semiconductor devices28%

H01LSemiconductor devices26%

H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1015%

H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h1014%

G06FElectric digital data processing4%

H10BElectronic memory devices3%

Y02EReduction of greenhouse gas [ghg] emissions, related to energy generation, transmission or distribution2%

G11CStatic stores1%

B60SServicing, cleaning, repairing, supporting, lifting, or manoeuvring of vehicles, not otherwise provided for1%

B64GCosmonautics1%

PatentTitleYear

11,079,239Method for directly planning reentry trajectory in height-velocity profile2021 10,879,395Method for forming semiconductor device structure with cap layer2020 10,872,889Semiconductor component and fabricating method thereof2020 10,868,151Conformal transfer doping method for fin-like field effect transistor2020 10,868,130Semiconductor device and method of manufacture2020 10,861,753Air gap formation between gate spacer and epitaxy structure2020 10,861,749Using a metal-containing layer as an etching stop layer and to pattern source/drain regions of a FinFET2020 10,854,726Integrated circuit with doped low-k sidewall spacers for gate stacks2020 10,770,354Method of forming integrated circuit with low-k sidewall spacers for gate stacks2020 10,756,171Integrated circuit device with source/drain barrier2020 10,748,820Source/drain features with an etch stop layer2020 10,714,619PMOS FinFET2020 10,680,084Epitaxial structures for fin-like field effect transistors2020 10,629,736Semiconductor structure and method for semiconductor device fabrication with improved source drain epitaxy2020 10,579,560Transaction-based hybrid memory2020 10,535,569Forming transistor by selectively growing gate spacer2020 10,529,803Semiconductor device with epitaxial source/drain2020 10,529,725Flexible merge scheme for source/drain epitaxy regions2020 10,522,642Semiconductor device with air-spacer2019 10,522,420Source/drain features with an etch stop layer2019 10,522,680Finfet semiconductor device structure with capped source drain structures2019 10,497,628Methods of forming epitaxial structures in fin-like field effect transistors2019 10,483,266Flexible merge scheme for source/drain epitaxy regions2019 10,453,753Using a metal-containing layer as an etching stop layer and to pattern source/drain regions of a FinFET2019 10,453,501Hybrid LPDDR4-DRAM with cached NVM and flash-NAND in multi-chip packages for mobile devices2019 10,403,551Source/drain features with an etch stop layer2019 10,283,624Semiconductor structure and method for forming the same2019 10,276,691Conformal transfer doping method for fin-like field effect transistor2019 10,269,935Semiconductor device including Fin-PET and manufacturing method thereof2019 10,217,815Integrated circuit device with source/drain barrier2019 10,158,017Semiconductor structure and method for semiconductor device fabrication with improved source drain epitaxy2018 10,158,007Semiconductor device and manufacturing method thereof2018 10,141,231FinFET device with wrapped-around epitaxial structure and manufacturing method thereof2018 10,134,902PMOS FinFET2018 10,127,074Transaction identification synchronization2018 10,103,146FinFET device with epitaxial structures that wrap around the fins and the method of fabricating the same2018 10,068,992Semiconductor device including fin FET and manufacturing method thereof2018 10,037,923Forming transistor by selectively growing gate spacer2018 9,940,980Hybrid LPDDR4-DRAM with cached NVM and flash-nand in multi-chip packages for mobile devices2018 9,942,463Camera device without image displaying function2018 9,882,029'Semiconductor device including Fin-FET and manufacturing method thereof'2018 9,865,504'Semiconductor device and manufacturing method thereof'2018 9,865,595'FinFET device with epitaxial structures that wrap around the fins and the method of fabricating the same'2018 9,812,576'Semiconductor device and manufacturing method thereof'2017 9,780,214'Semiconductor device including Fin- FET and manufacturing method thereof'2017 9,748,389'Method for semiconductor device fabrication with improved source drain epitaxy'2017 9,742,402'Keyswitch and keyboard with distance detecting function'2017 9,680,017'Semiconductor device including Fin FET and manufacturing method thereof'2017 9,570,556'Semiconductor device and manufacturing method thereof'2017 9,285,926'Input device with optical module for determining a relative position of an object thereon'2016 8,937,595'Optical touch control apparatus and adjustable light guide apparatus'2015 8,914,197'Windshield wiper controller, optical raindrop detector and detection method thereof'2014 8,823,099'Semiconductor device having gradient doping profile'2014 8,760,403'Hybrid human-interface device'2014 8,501,569'Semiconductor device having gradient doping profile'2013 7,206,418'Noise suppression for a wireless communication device'2007 6,797,587'Active region corner implantation method for fabricating a semiconductor integrated circuit microelectronic fabrication'2004

Career & activity timeline

Assembled from patent assignee/location history and declaration credentials.

2004–2014Patents assigned to TAIWAN SEMICONDUCTOR MFG (3)· patent assignee history

2013–2016Patents assigned to YANG FENG-CHENG (2)· patent assignee history

2013–2020Based in Hsinchu County, TW· patent location history

2014–2018Patents assigned to PIXART IMAGING INC (6)· patent assignee history

2014–2020Based in Hsinchu, TW· patent location history

2014–2020Based in Zhudong Township, TW· patent location history

2017–2020Patents assigned to TAIWAN SEMICONDUCTOR MFG CO LTD (42)· patent assignee history

2018–2020Patents assigned to FUTUREWEI TECHNOLOGIES INC (4)· patent assignee history

2018–2020Based in Portland, OR, US· patent location history

2021Based in Dalian, CN· patent location history

Inventor activity

Assignee and location history derived from the patent record.

Assignees

Assignee	Patents	Span
TAIWAN SEMICONDUCTOR MFG CO LTD	42	2017–2020
PIXART IMAGING INC	6	2014–2018
FUTUREWEI TECHNOLOGIES INC	4	2018–2020
TAIWAN SEMICONDUCTOR MFG	3	2004–2014
YANG FENG-CHENGself	2	2013–2016

Locations

Location	Patents	Span
Hsinchu County, TW	31	2013–2020
Hsinchu, TW	10	2014–2020
Zhudong Township, TW	9	2014–2020
Portland, OR, US	4	2018–2020
Dalian, CN	1	2021