Inventor
Hui ZANG
Inventor
US
Overview
Patents· 56 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
H01Lprimary
H01LSemiconductor devices33%
H10FInorganic semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation28%
H10DInorganic electric semiconductor devices17%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h109%
H04NPictorial communication, e.g. television5%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h105%
G06NComputing arrangements based on specific computational models1%
G06FElectric digital data processing1%
H10BElectronic memory devices1%
PatentTitleYear
12,575,201Buried channel transistor structures and processes202612,568,802Single diffusion cut for gate structures202612,501,728Global-shutter pixel202512,477,846Pixel with vertical transfer structure for dark current improvement, an image sensor thereof and a fabrication method thereof202512,471,394Central deep trench isolation shift202512,464,837High dynamic range, backside-illuminated, low crosstalk image sensor with walls on backside surface to isolate photodiodes202512,430,560Distributed synchronous training architecture using stale weights202512,417,944Formation of trench silicide source or drain contacts without gate damage202512,419,125CMOS devices with asymmetrically passivated isolation structure and methods thereof202512,289,927Image sensor diagonal isolation structures202512,284,839Dual depth junction structures and process methods202512,154,919Uniform threshold voltage non-planar transistors202412,107,107Dark-current inhibiting image sensor and method202412,062,670Pixel layout with photodiode region partially surrounding circuitry202412,034,027Semiconductor device contact pad and method of contact pad fabrication202412,002,869Gate contact structures and cross-coupled contact structures for transistor devices202411,990,496Vertical transfer structures202411,978,753Process to release silicon stress in forming CMOS image sensor202411,948,965Uneven-trench pixel cell and fabrication method202411,923,248Single diffusion cut for gate structures202411,843,019Pixel, associated image sensor, and method202311,842,178Compiler-level general matrix multiplication configuration optimization202311,810,931Pixel-array substrate202311,810,812Single diffusion cut for gate structures202311,810,940Pointed-trench pixel-array substrate and associated fabrication method202311,784,206Pixel-array substrate and associated method202311,710,752Flicker-mitigating pixel-array substrate202311,695,029Pixel formation method202311,677,011Fabrication process of vertical-channel, silicon, field-effect transistors202311,670,648Flicker-mitigating pixel-array substrate202311,621,336Pyramid-shaped transistors202311,610,965Gate cut isolation including air gap, integrated circuit including same and related method202311,588,033Uniform threshold voltage non-planar transistors202311,574,947Method and image sensor with vertical transfer gate and buried backside-illuminated photodiodes202311,569,356Scaled gate contact and source/drain cap202311,538,836Cell deep trench isolation pyramid structures for CMOS image sensors202211,522,005Trench formation methods202211,482,456Forming two portion spacer after metal gate and contact formation, and related IC structure202211,476,290Metal deep trench isolation biasing solution202211,469,309Gate contact structures and cross-coupled contact structures for transistor devices202211,462,579Pixel and associated transfer-gate fabrication method202211,456,382Transistor comprising an air gap positioned adjacent a gate electrode202211,450,570Single diffusion cut for gate structures202211,450,678Split gate (SG) memory device and novel methods of making the SG-memory device202211,450,696Dual floating diffusion transistor with vertical gate structure for image sensor202211,443,982Formation of trench silicide source or drain contacts without gate damage202211,437,286Middle of line structures202211,417,701Image sensor with vertical transfer gate and square reset and source follower layout202211,362,121Light attenuation layer fabrication method and structure for image sensor202211,355,537Vertical gate structure and layout in a CMOS image sensor202211,348,870Electrical fuse formation during a multiple patterning process202211,335,718Cell deep trench isolation structure for near infrared improvement202211,302,727Pixel, associated image sensor, and method202211,282,886Pixel, associated image sensor, and method202211,244,979Deep trench isolation (DTI) structure for CMOS image sensor202211,138,514Review machine learning system2021Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
2021–2026Based in US· patent location history
2022–2026Patents assigned to OMNIVISION TECH INC (38)· patent assignee history
2022–2026Patents assigned to GLOBALFOUNDRIES US INC (13)· patent assignee history
2022–2025Patents assigned to IBM (2)· patent assignee history
2023–2025Patents assigned to HUAWEI TECH CO LTD (2)· patent assignee history
2023–2025Patents assigned to OMNI VISION TECH INC (2)· patent assignee history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| OMNIVISION TECH INC | 38 | 2022–2026 |
| GLOBALFOUNDRIES US INC | 13 | 2022–2026 |
| HUAWEI TECH CO LTD | 2 | 2023–2025 |
| IBM | 2 | 2022–2025 |
| OMNI VISION TECH INC | 2 | 2023–2025 |
Locations
| Location | Patents | Span |
|---|---|---|
| US | 56 | 2021–2026 |