Inventor
Tsukuru Ohtoshi
Inventor
Kokubunji, JP
Overview
Patents· 24 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
H01Sprimary
H01SDevices using the process of light amplification by stimulated emission of radiation [laser] to amplify or generate light37%
B82YSpecific uses or applications of nanostructures31%
H10FInorganic semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation7%
G02BOptical elements, systems or apparatus4%
H10HInorganic light-emitting semiconductor devices having potential barriers4%
A61BDiagnosis2%
G01NInvestigating or analysing materials by determining their chemical or physical properties2%
G02FOptical devices or arrangements for the control of light by modification of the optical properties of the media of the elements involved therein2%
H04NPictorial communication, e.g. television2%
H10DInorganic electric semiconductor devices2%
PatentTitleYear
8,449,160'Multi-wavelength light emitting device'20138,390,549'Organic luminescent display device'20138,369,913'Optical measurement instrument for living body semiconductor laser installation for living body light measuring device'20137,738,521'Semiconductor laser device'20107,668,217'Semiconductor laser diode device'20107,542,498'Semiconductor laser diode'20097,038,233'Semiconductor optical devices and optical modules'20066,639,925'Optical information processing equipment and semiconductor light emitting device suitable therefor'20036,635,908'Burying type avalanche photodiode and fabrication method thereof'20036,542,526'Optical information processor and semiconductor light emitting device suitable for the same'20035,543,629'Superlattice avalanche photodiode (APD)'19965,324,959'Semiconductor optical device having a heterointerface therein'19945,299,217'Semiconductor light-emitting device with cadmium zinc selenide layer'19945,177,758'Semiconductor laser device with plural active layers and changing optical properties'19935,170,404'Semiconductor laser device suitable for optical communications systems drive'19925,136,601'Semiconductor laser'19925,132,981'Semiconductor optical device'19925,119,393'Semiconductor laser device capable of controlling wavelength shift'19925,073,892'Semiconductor laser device'19915,042,049'Semiconductor optical device'19914,881,235'Semiconductor laser having a multiple quantum well structure doped with impurities'19894,835,578'Semiconductor device having a quantum wire and a method of producing the same'19894,602,371'High output semiconductor laser device utilizing a mesa-stripe optical confinement region'19864,563,764'Semiconductor laser device'1986Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
1986–2013Patents assigned to HITACHI LTD (19)· patent assignee history
1986–1996Based in Kokubunji, JP· patent location history
1994–2013Based in Hanno, JP· patent location history
2006–2010Patents assigned to OPNEXT JAPAN INC (3)· patent assignee history
2013Patents assigned to OHTOSHI TSUKURU (3)· patent assignee history
2013Patents assigned to AOKI MASAHIRO (1)· patent assignee history
2013Patents assigned to CANON KK (1)· patent assignee history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| HITACHI LTD | 19 | 1986–2013 |
| OHTOSHI TSUKURUself | 3 | 2013 |
| OPNEXT JAPAN INC | 3 | 2006–2010 |
| AOKI MASAHIRO | 1 | 2013 |
| CANON KK | 1 | 2013 |
Locations
| Location | Patents | Span |
|---|---|---|
| Kokubunji, JP | 13 | 1986–1996 |
| Hanno, JP | 11 | 1994–2013 |