Inventor
Hyeon Soo Kim
Inventor
Ichon-shi, KR
Overview
Patents· 17 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
H10Dprimary
H10DInorganic electric semiconductor devices28%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1019%
H10BElectronic memory devices17%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h1014%
G07CTime or attendance registers6%
B60WConjoint control of vehicle sub-units of different type or different function3%
C30BSingle-crystal growth3%
G08CTransmission systems for measured values, control or similar signals3%
H04LTransmission of digital information, e.g. telegraphic communication3%
H04WWireless communication networks3%
PatentTitleYear
9,710,976'System and method for transmitting data of a vehicle'20178,741,735'Method of forming a semiconductor memory device'20148,691,703'Method of manufacturing semiconductor device'20148,674,425'Semiconductor memory device and method of manufacturing the same'20148,472,875'Wireless mobile communication system for vehicle and method of use'20137,335,554'Method for fabricating semiconductor'20087,148,129'Method of growing selective area by metal organic chemical vapor deposition'20066,551,913'Method for fabricating a gate electrode of a semiconductor device'20036,503,806'Method for forming gate electrode of a semiconductor device with dual spacer to protect metal portion of gate'20036,376,874'Method for fabricating a capacitor of a semiconductor memory device'20026,333,250'Method of forming gate electrode in semiconductor device'20016,333,241'Method for fabricating capacitor of semiconductor memory device'20016,277,738'Method of manufacturing a semiconductor device capable of reducing contact resistance'20016,197,693'Methods for forming gate electrodes of semiconductor devices'20016,165,884'Method of forming gate electrode in semiconductor device'20006,114,241'Method of manufacturing a semiconductor device capable of reducing contact resistance'20005,567,642'Method of fabricating gate electrode of CMOS device'1996Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
1996–2003Patents assigned to HYUNDAI ELECTRONICS IND (8)· patent assignee history
1996–2001Based in Kyungki-do, KR· patent location history
2000–2008Based in Ichon-shi, KR· patent location history
2001–2006Patents assigned to SAMSUNG ELECTRONICS CO LTD (3)· patent assignee history
2001–2003Based in Taegu, KR· patent location history
2006–2017Based in Suwon-si, KR· patent location history
2013–2014Patents assigned to KIM HYEON SOO (3)· patent assignee history
2013–2017Patents assigned to HYUNDAI MOTOR CO LTD (2)· patent assignee history
2014Patents assigned to SK HYNIX INC (3)· patent assignee history
2014Based in Icheon-si, KR· patent location history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| HYUNDAI ELECTRONICS IND | 8 | 1996–2003 |
| KIM HYEON SOOself | 3 | 2013–2014 |
| SAMSUNG ELECTRONICS CO LTD | 3 | 2001–2006 |
| SK HYNIX INC | 3 | 2014 |
| HYUNDAI MOTOR CO LTD | 2 | 2013–2017 |
Locations
| Location | Patents | Span |
|---|---|---|
| Ichon-shi, KR | 5 | 2000–2008 |
| Icheon-si, KR | 3 | 2014 |
| Kyungki-do, KR | 3 | 1996–2001 |
| Suwon-si, KR | 2 | 2006–2017 |
| Taegu, KR | 2 | 2001–2003 |