Inventor

Chih-Wei Yang

Inventor
Kaohsiung, TW

Overview

79→
Patents
2004–2020
Patent span
Electricity
Primary field (CPC H)

Patents· 79 as inventor

Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.

H10Dprimary
H10DInorganic electric semiconductor devices23%
H01LSemiconductor devices20%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1010%
G06FElectric digital data processing8%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h108%
H01MProcesses or means, e.g. batteries, for the direct conversion of chemical energy into electrical energy3%
H03LAutomatic control, starting, synchronisation or stabilisation of generators of electronic oscillations or pulses3%
Y02EReduction of greenhouse gas [ghg] emissions, related to energy generation, transmission or distribution3%
H05KPrinted circuits2%
B82YSpecific uses or applications of nanostructures1%
PatentTitleYear
10,818,660Semiconductor device202010,802,564Method and system for chassis voltage drop compensation202010,763,264Method for forming dynamic random access memory structure202010,684,634Method and system for compensating for temperature rise effects202010,522,415Semiconductor device201910,460,997Manufacturing method of semiconductor device201910,453,849Dynamic random access memory structure and method for forming the same201910,420,265Automated inserting device for workpiece assembly201910,396,171Semiconductor structure and manufacturing method thereof201910,347,716Method for fabricating shallow trench isolation between fin-shaped structures201910,332,877Semiconductor device and manufacturing method thereof201910,283,616Fabricating method of semiconductor structure201910,283,413Semiconductor device and manufacturing method thereof201910,249,729Method for fabricating metal replacement gate semiconductor device using dummy gate and composite spacer structure201910,191,614Panel displaying method, portable electronic device and recording medium using the method201910,164,039Semiconductor device having metal gate201810,153,353Semiconductor structure201810,134,629Method for manufacturing a semiconductor structure201810,019,154Method, apparatus and computer program product for operating items with multiple fingers20189,991,337Semiconductor device and method for fabricating the same20189,965,138Mobile communications device, non-transitory computer-readable medium and method of activating update of home screen of mobile communications device20189,933,821Chassis with lock mechanism20189,891,781'Mobile communications device, non-transitory computer-readable medium and method of navigating between a plurality of different views of home screen of mobile communications device'20189,875,937Method for forming semiconductor structure with nanowire structures20189,875,928'Metal interconnect structure and method for fabricating the same'20189,777,743'Centrifugal fan impeller structure'20179,777,742'Centrifugal fan impeller structure'20179,754,841'Method of forming integrated circuit having plural transistors with work function metal gate structures'20179,688,303'System and method for detecting failure of a steering angle sensor'20179,660,022'Semiconductive device with a single diffusion break and method of fabricating the same'20179,627,523'High electron mobility transistor'20179,607,892'Method for forming a two-layered hard mask on top of a gate structure'20179,583,568'Semiconductor structure and manufacturing method thereof'20179,530,851'Semiconductor device and manufacturing methods thereof'20169,508,827'Method for fabricating semiconductor device'20169,490,341'Semiconductor device having metal gate and method for manufacturing semiconductor device having metal gate'20169,466,564'Semiconductor device and method for fabricating the same'20169,406,516'High-K metal gate process for lowering junction leakage and interface traps in NMOS transistor'20169,385,236'Fin shaped semiconductor device structures having tipped end shape and method for fabricating the same'20169,349,822'Semiconductor device and method for fabricating the same'20169,331,154'High electron mobility transistor'20169,318,389'Integrated circuit having plural transistors with work function metal gate structures'20169,312,352'Field-effect transistor and fabricating method thereof'20169,285,980'Method, apparatus and computer program product for operating items with multiple fingers'20169,269,791'Multi-gate MOSFET with embedded isolation structures'20169,196,726'Semiconductor device'20159,184,254'Field-effect transistor and fabricating method thereof'20159,146,634'Handheld device and homescreen management method thereof'20158,883,638'Method for manufacturing damascene structure involving dummy via holes'20148,839,099'Flash content navigation method, mobile electronic device, and computer-readable medium'20148,772,138'High voltage light emitting diode chip and its manufacturing method'20148,501,636'Method for fabricating silicon dioxide layer'20138,482,925'High-density computer system'20138,312,506'Digital television setting information storage apparatus and method for accessing digital television information'2012RE043673'Dual gate dielectric scheme: SiON for high performance devices and high K for low power devices'20128,049,742'Image data refreshing method and display system using the same'20118,040,193'Oscillation adjusting circuit and method'2011D0633896'Headphone'20117,892,676'Cathode material for manufacturing a rechargeable battery'20117,887,954'Electrochemical composition and associated technology'20117,872,509'Delay lock loop and phase angle generator'20117,799,457'Ion storage compound of cathode material and method for preparing the same'20107,781,100'Cathode material for manufacturing rechargeable battery'20107,700,236'Cathode material for manufacturing a rechargeable battery'20107,579,889'Delay lock loop and phase angle generator'20097,541,877'Auto-adjusting high accuracy oscillator'20097,524,529'Method for making a lithium mixed metal compound having an olivine structure'20097,338,898'MOS transistor and fabrication thereof'20087,315,216'Adjusting frequency device of built-in oscillator for USB interface and method thereof'20087,283,000'Auto-adjusting high accuracy oscillator'20077,271,450'Dual-gate structure and method of fabricating integrated circuits having dual-gate structures'20077,258,554'Structure for preventing incorrect insertion of an interface module'20077,145,208'MOS transistor having a work-function-dominating layer'20067,071,066'Method and structure for forming high-k gates'20067,061,376'System of non-intrusive access control and method thereof'20067,030,024'Dual-gate structure and method of fabricating integrated circuits having dual-gate structures'20067,015,405'Panel device for ATCA main board'20066,890,811'Dual gate dielectric scheme: SiON for high performance devices and high k for low power devices'20056,706,581'Dual gate dielectric scheme: SiON for high performance devices and high k for low power devices'2004

Career & activity timeline

Assembled from patent assignee/location history and declaration credentials.

2004–2012Patents assigned to TAIWAN SEMICONDUCTOR MFG (6)· patent assignee history
2004–2019Based in Kaohsiung, TW· patent location history
2006–2020Patents assigned to UNITED MICROELECTRONICS CORP (37)· patent assignee history
2006–2020Based in Tainan, TW· patent location history
2006–2011Based in Taipei, TW· patent location history
2007–2011Based in Hsinchu, TW· patent location history
2008–2011Patents assigned to HOLTEK SEMICONDUCTOR INC (4)· patent assignee history
2010–2020Based in Taoyuan, TW· patent location history
2012–2016Patents assigned to YANG CHIH-WEI (7)· patent assignee history
2014–2019Patents assigned to HTC CORP (7)· patent assignee history

Inventor activity

Assignee and location history derived from the patent record.

Assignees
AssigneePatentsSpan
UNITED MICROELECTRONICS CORP372006–2020
HTC CORP72014–2019
YANG CHIH-WEIself72012–2016
TAIWAN SEMICONDUCTOR MFG62004–2012
HOLTEK SEMICONDUCTOR INC42008–2011
Locations
LocationPatentsSpan
Kaohsiung, TW342004–2019
Taoyuan, TW112010–2020
Tainan, TW92006–2020
Hsinchu, TW62007–2011
Taipei, TW52006–2011