Inventor
Ivan Eliashevich
Inventor
Maplewood, NJ, US
Overview
Patents· 25 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
H10Hprimary
H10HInorganic light-emitting semiconductor devices having potential barriers43%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h1021%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1011%
B23KSoldering or unsoldering9%
Y10STechnical subjects covered by former uspc cross-reference art collections [xracs] and digests8%
H10DInorganic electric semiconductor devices4%
C30BSingle-crystal growth2%
H01SDevices using the process of light amplification by stimulated emission of radiation [laser] to amplify or generate light2%
PatentTitleYear
7,842,547'Laser lift-off of sapphire from a nitride flip-chip'20107,667,236'Optimized contact design for thermosonic bonding of flip-chip devices'20107,635,869'Support with recessed electrically conductive chip attachment material for flip-chip bonding a light emitting chip'20097,456,035'Flip chip light emitting diode devices having thinned or removed substrates'20087,358,539'Flip-chip light emitting diode with indium-tin-oxide based reflecting contacts'20087,285,801'LED with series-connected monolithically integrated mesas'20077,190,005'GaN LED with solderable backside metal'20077,179,670'Flip-chip light emitting diode device without sub-mount'20077,115,896'Semiconductor structures for gallium nitride-based devices'20067,087,463'Laser separation of encapsulated submount'20067,084,475'Lateral conduction Schottky diode with plural mesas'20067,078,319'Laser separated die with tapered sidewalls for improved light extraction'20067,064,356'Flip chip light emitting diode with micromesas and a conductive mesh'20067,023,022'Microelectronic package having improved light extraction'20067,015,516'Led packages having improved light extraction'20066,964,877'LED power package'20056,958,498'Optimized contact design for flip-chip LED'20056,902,990'Semiconductor device separation using a patterned laser projection'20056,849,524'Semiconductor wafer protection and cleaning for device separation using laser ablation'20056,787,435'GaN LED with solderable backside metal'20046,746,889'Optoelectronic device with improved light extraction'20046,661,167'LED devices'20036,653,215'Contact to n-GaN with Au termination'20036,642,548'Light-emitting diodes with loop and strip electrodes and with wide medial sections'20036,413,839'Semiconductor device separation using a patterned laser projection'2002Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
2002–2006Patents assigned to EMCORE CORP (9)· patent assignee history
2002–2005Based in Millburn, NJ, US· patent location history
2003–2007Patents assigned to GELCORE LLC (9)· patent assignee history
2003–2010Based in Maplewood, NJ, US· patent location history
2003–2005Based in South Orange, NJ, US· patent location history
2006Patents assigned to VELOX SEMICONDUCTOR CORP (1)· patent assignee history
2007–2010Patents assigned to LUMINATION LLC (6)· patent assignee history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| EMCORE CORP | 9 | 2002–2006 |
| GELCORE LLC | 9 | 2003–2007 |
| LUMINATION LLC | 6 | 2007–2010 |
| VELOX SEMICONDUCTOR CORP | 1 | 2006 |
Locations
| Location | Patents | Span |
|---|---|---|
| Maplewood, New Jersey, US | 19 | 2003–2010 |
| South Orange, New Jersey, US | 4 | 2003–2005 |
| Millburn, New Jersey, US | 2 | 2002–2005 |