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Inventor

Fu-Kai Yang

Inventor
Hsinchu, TW

Overview

3→
Patents
2010–2021
Patent span
Electricity
Primary field (CPC H)

Patents· 3 as inventor

Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.

H01Lprimary
H01LSemiconductor devices22%
H10DInorganic electric semiconductor devices22%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1022%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h1022%
H10HInorganic light-emitting semiconductor devices having potential barriers11%
PatentTitleYear
11,037,924Method for forming source/drain contacts202111,018,011Methods of forming contact features in semiconductor devices20217,704,764'Fabrication method of GaN power LEDs with electrodes formed by composite optical coatings'2010

Career & activity timeline

Assembled from patent assignee/location history and declaration credentials.

2010Patents assigned to INST SEMICONDUCTORS CAS (1)· patent assignee history
2010Based in Beijing, CN· patent location history
2021Patents assigned to TAIWAN SEMICONDUCTOR MFG CO LTD (2)· patent assignee history
2021Based in Hsinchu, TW· patent location history

Inventor activity

Assignee and location history derived from the patent record.

Assignees
AssigneePatentsSpan
TAIWAN SEMICONDUCTOR MFG CO LTD22021
INST SEMICONDUCTORS CAS12010
Locations
LocationPatentsSpan
Hsinchu, TW22021
Beijing, CN12010