Inventor

AMRITA MATHURIYA

Inventor
US

Overview

254→
Patents
2021–2026
Patent span
Electricity
Primary field (CPC H)

Patents· 254 as inventor

Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.

H10Dprimary
H10DInorganic electric semiconductor devices18%
H10BElectronic memory devices16%
G11CStatic stores15%
H01LSemiconductor devices11%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h109%
H03KPulse technique8%
G06FElectric digital data processing8%
G06NComputing arrangements based on specific computational models4%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h103%
H10NElectric solid-state devices not otherwise provided for3%
PatentTitleYear
12,593,456Method of fabricating transistors and stacked non-planar capacitors for memory and logic applications202612,562,204Non-linear polar material based multi-capacitor bit-cell with shared gain element with series transistor and individual access transistor202612,563,737Memory device fabrication through wafer bonding202612,554,462Asynchronous full-adder with majority or minority gates to generate an enable or an acknowledgement202612,525,543Integration process for fabricating embedded memory202612,524,204Ferroelectric or paraelectric based low power multiplier202612,524,205Asynchronous full-adder with majority or minority gates to generate sum true output202612,517,701Sequential reset mechanism for a chain of majority or minority gates having non-linear polar material202612,481,481Asynchronous carry-ripple adder with majority or minority gates202512,464,730Method of forming capacitors through wafer bonding202512,463,142Integrating embedded memory with logic interconnects202512,451,888Ripple carry adder with ferroelectric or paraelectric wide-input minority or majority gates202512,446,231Method of integrating a capacitor including a non-linear polar material with a transistor through wafer bonding202512,445,134Diode connected non-linear input capacitors based majority gate202512,436,739Non-linear polar material based low power multiplier with transmission-gate based reset mechanism202512,439,606Gate coupled non-linear polar material based capacitors for memory and logic202512,412,611Time decoupled write operations for non-linear polar material based memory202512,411,657Asynchronous full-adder with majority or minority gates to generate carry-out true output202512,414,306Method of fabricating memory devices using pocket integration202512,405,768Asynchronous full-adder with majority or minority gates to generate carry-out false output202512,379,898Asynchronous full-adder with majority or minority gates to generate sum false output202512,376,312Methods of fabricating planar capacitors on a shared plate electrode202512,374,377Ferroelectric or paraelectric wide-input minority or majority gate based low power adder202512,369,326Capacitor devices with shared electrode and methods of fabrication202512,349,365Drain coupled non-linear polar material based capacitors for memory and logic202512,347,476Apparatus and method to improve sensing noise margin in a non-linear polar material based bit-cell202512,334,127Non-linear polar material based multi-capacitor high density bit-cell202512,334,923Multi-cycle reset mechanism for a chain of majority gates having non-linear polar material202512,334,918Stacked non-planar capacitors based multi-function linear threshold gate with input based adaptive threshold202512,336,184Methods of fabricating trench capacitors on a shared plate electrode202512,328,878Integration of 2T-202512,322,743Multi-function threshold gate with input based adaptive threshold and with stacked non-planar paraelectric capacitors202512,324,163Planar capacitors with shared electrode and methods of fabrication202512,324,162Stacked capacitors with shared electrodes and methods of fabrication202512,316,319Multi-function linear threshold gate with input based adaptive threshold202512,308,064Random swap injection202512,308,836Method of adjusting threshold of a linear capacitive-input circuit202512,308,838Exclusive-or logic gate with non-linear input capacitors202512,308,837Multiplier with non-linear polar material202512,300,297Memory array with buried or backside word-line202512,294,370Area optimized ferroelectric or paraelectric based low power multiplier202512,289,104Ferroelectric or paraelectric based low power multiplier array202512,289,894Method of fabricating transistors and stacked planar capacitors for memory and logic applications202512,283,955Majority or minority based low power checkerboard carry save multiplier with inverted multiplier cells202512,283,571Ultra high-bandwidth artificial intelligence (AI) processor with DRAM under the processor202512,274,071Capacitor integrated with a transistor for logic and memory applications202512,272,675Method of forming 3D stacked compute and memory with copper pillars202512,265,494Multi-die mapping matrix multiplication202512,262,541Trench capacitors with shared electrode202512,262,543High density ferroelectric random access memory (FeRAM) devices and methods of fabrication202512,243,7973D stack of split graphics processing logic dies202512,238,935Embedded memory adjacent to non-memory202512,218,045Stacked planar capacitors based multi-function linear threshold gate with input based adaptive threshold202512,212,321Non-linear polar material based flip-flop202512,200,941Pillar capacitor and method of fabricating such202512,190,946Read disturb mitigation for non-linear polar material based multi-capacitor bit-cell202512,171,103Multi-input threshold gate having stacked and folded non-planar capacitors202412,166,011Method of forming an artificial intelligence processor with three-dimensional stacked memory202412,155,383Reset mechanism for an adder or a multiplier having paraelectric material202412,147,941Iterative monetization of precursor in process development of non-linear polar material and devices202412,147,747Area oriented logic synthesis202412,142,310Method of fabricating pedestal based memory devices using pocket integration202412,137,574Integration of ferroelectric memory devices having stacked electrodes with transistors202412,126,339Apparatus with selectable majority gate and combinational logic gate outputs202412,118,327Ripple carry adder with inverted ferroelectric or paraelectric based adders202412,118,330Low power multiplier with non-linear polar material based reset mechanism with sequential reset202412,113,097Ferroelectric capacitor integrated with logic202412,108,609Memory bit-cell with stacked and folded planar capacitors202412,107,579Method for conditioning majority or minority gate202412,108,607Devices with continuous electrode plate and methods of fabrication202412,108,608Memory devices with dual encapsulation layers and methods of fabrication202412,094,923Rapid thermal annealing (RTA) methodologies for integration of perovskite-material based memory devices202412,096,638One transistor and N memory element based memory bit-cell having stacked and folded planar memory elements with and without offset202412,094,511Write disturb mitigation for column multiplexed non-linear polar material based multi-capacitor bit-cell202412,086,410Ferroelectric memory chiplet in a multi-dimensional packaging with I/O switch embedded in a substrate or interposer202412,088,297Majority gate based low power ferroelectric based adder with reset mechanism202412,087,730Multi-input threshold gate having stacked and folded planar capacitors with and without offset202412,079,475Ferroelectric memory chiplet in a multi-dimensional packaging202412,069,866Pocket integration process for embedded memory202412,062,584Iterative method of multilayer stack development for device applications202412,041,7851TnC memory bit-cell having stacked and folded non-planar capacitors202412,034,086Trench capacitors with continuous dielectric layer and methods of fabrication202412,029,043Planar and trench capacitors with hydrogen barrier dielectric for logic and memory applications and methods of fabrication202412,026,034Method and apparatus for heuristic-based power gating of non-CMOS logic and CMOS based logic202412,022,662Planar and trench capacitors for logic and memory applications and methods of fabrication202412,019,492Method and apparatus for managing power in a multi-dimensional packaging202412,015,402Asynchronous consensus circuit with stacked ferroelectric non-planar capacitors202412,016,185Planar and trench capacitors for logic and memory applications202412,010,854Multi-level hydrogen barrier layers for memory applications and methods of fabrication202412,009,820Asynchronous consensus circuit with majority gate based on non-linear capacitors202412,001,266Method and apparatus for managing power of ferroelectric or paraelectric logic and CMOS based logic202411,997,8531TnC memory bit-cell having stacked and folded planar capacitors with lateral offset202411,996,438Pocket flow for trench capacitors integrated with planar capacitors on a same substrate and method of fabrication202411,985,832Planar and trench capacitors with hydrogen barrier dielectric for logic and memory applications202411,985,831Multi-function threshold gate with input based adaptive threshold and with stacked non-planar ferroelectric capacitors202411,978,762Planar capacitors with non-linear polar material staggered on a shared electrode202411,979,148Asynchronous consensus circuit with stacked linear or paraelectric planar capacitors202411,967,954Majority or minority logic gate with non-linear input capacitors without reset202411,961,877Dual hydrogen barrier layer for trench capacitors integrated with low density film for logic structures202411,955,512Dual hydrogen barrier layer for trench capacitors integrated with low density film for logic structures and methods of fabrication202411,955,153Multi-element gain memory bit-cell having stacked and folded planar memory elements with and without offset202411,942,133Pedestal-based pocket integration process for embedded memory202411,922,105Computer-aided design tool for minimum gate count initialization202411,909,391Asynchronous completion tree circuit using multi-function threshold gate with input based adaptive threshold202411,910,618Multi-element ferroelectric gain memory bit-cell having stacked and folded non-planar capacitors202411,908,704Method of fabricating a perovskite-material based planar capacitor using rapid thermal annealing (RTA) methodologies202411,901,891Asynchronous consensus circuit with stacked ferroelectric planar capacitors202411,903,219Multi-element ferroelectric gain memory bit-cell having stacked and folded planar capacitors202411,899,613Method and apparatus to process an instruction for a distributed logic having tightly coupled accelerator core and processor core in a multi-dimensional packaging202411,894,417Method of fabricating a perovskite-material based trench capacitor using rapid thermal annealing (RTA) methodologies202411,888,479Non-linear polar material based low power multiplier with NOR and NAND gate based reset mechanism202411,875,836Apparatus and method for endurance of non-volatile memory banks via wear leveling with linear indexing202411,869,928Dual hydrogen barrier layer for memory devices202411,871,583Ferroelectric memory devices202411,869,562Apparatus and method for endurance of non-volatile memory banks via wear leveling in a round robin fashion202411,871,584Multi-level hydrogen barrier layers for memory applications202411,869,843Integrated trench and via electrode for memory device applications and methods of fabrication202411,863,184Asynchronous validity tree circuit using multi-function threshold gate with input based adaptive threshold202411,861,278Computer-aided design tool for gate pruning202411,861,279Computer-aided design tool for inverter minimization202411,863,183Low power non-linear polar material based threshold logic gate multiplier202411,862,517Integrated trench and via electrode for memory device applications202411,855,626Asynchronous consensus circuit with stacked linear or paraelectric non-planar capacitors202311,853,666Computer-aided design tool for wide-input logic initialization202311,855,627Asynchronous consensus circuit using multi-function threshold gate with input based adaptive threshold202311,854,593Ferroelectric memory device integrated with a transition electrode202311,841,757Method and apparatus for cycle-by-cycle clock gating of ferroelectric or paraelectric logic and CMOS based logic202311,844,223Ferroelectric memory chiplet as unified memory in a multi-dimensional packaging202311,844,203Conductive and insulative hydrogen barrier layer for memory devices202311,844,225Dual hydrogen barrier layer for memory devices integrated with low density film for logic structures and methods of fabrication202311,837,268Multi-element ferroelectric gain memory bit-cell having stacked and folded planar capacitors with lateral offset202311,836,102Low latency and high bandwidth artificial intelligence processor202311,839,088Integrated via and bridge electrodes for memory array applications and methods of fabrication202311,839,070High density dual encapsulation materials for capacitors and methods of fabrication202311,832,451High density ferroelectric random access memory (FeRAM) devices and methods of fabrication202311,829,699Method to segregate logic and memory into separate dies for thermal management in a multi-dimensional packaging202311,823,725Apparatus and method for endurance of non-volatile memory banks via multi-level wear leveling202311,818,897Method of forming a stack of planar capacitors including capacitors with non-linear polar material and linear dielectric for common mode compensation in a memory bit-cell202311,817,859Asynchronous circuit with multi-input threshold gate logic and 1-input threshold gate202311,817,140Reading scheme for 1TNC ferroelectric memory bit-cell with plate-line parallel to bit-line and with individual switches and control on plate-lines of the bit-cell202311,816,408Computer-aided design tool for majority or minority inverter graph synthesis202311,809,801Computer-aided design tool for circuit logic initialization202311,810,608Manganese or scandium doped multi-element non-linear polar material gain memory bit-cell202311,800,722Common mode compensation for non-linear polar material based differential memory bit-cell having one transistor and multiple capacitors202311,791,233Ferroelectric or paraelectric memory and logic chiplet with thermal management in a multi-dimensional packaging202311,792,998Process integration flow for embedded memory with multi-pocket masks for decoupling processing of memory areas from non-memory areas202311,790,969Apparatus and method for endurance of non-volatile memory banks via outlier compensation202311,792,997Common mode compensation for differential multi-element non-linear polar material based gain memory bit-cell202311,790,972Writing scheme for multi-element gain ferroelectric memory bit-cell with plate-lines parallel to a bit-line and with individual switches and control on the plate-lines of the bit-cell202311,785,782Embedded memory with encapsulation layer adjacent to a memory stack202311,784,1643D stacked compute and memory with copper-to-copper hybrid bond202311,777,504Non-linear polar material based latch202311,770,936Stack of planar capacitors including capacitors with non-linear polar material and linear dielectric for common mode compensation in a memory bit-cell202311,769,790Rapid thermal annealing (RTA) methodologies for integration of perovskite-material based trench capacitors202311,769,543Writing scheme for 1TNC ferroelectric memory bit-cell with plate-lines parallel to a bit-line and with individual switches and control on the plate-lines of the bit-cell202311,765,908Memory device fabrication through wafer bonding202311,765,909Process integration flow for embedded memory enabled by decoupling processing of a memory area from a non-memory area202311,764,1903D stacked compute and memory with copper pillars202311,764,790Majority logic gate having paraelectric input capacitors coupled to a conditioning scheme202311,757,452OR-and-invert logic based on a mix of majority or minority logic gate with non-linear input capacitors and other logic gates202311,758,708Stack of non-planar capacitors including capacitors with non-linear polar material and linear dielectric for common mode compensation in a memory bit-cell202311,758,738Integration of ferroelectric memory devices with transistors202311,750,197AND-OR-invert logic based on a mix of majority OR minority logic gate with non-linear input capacitors and other logic gates202311,751,404FinFET transistor based resistive random access memory202311,748,537Computer-aided design tool for logic synthesis of a mix of CMOS gates and majority and minority logic circuits202311,751,403Common mode compensation for 2T1C non-linear polar material based memory bit-cell202311,741,428Iterative monetization of process development of non-linear polar material and devices202311,742,860Fabrication of a majority logic gate having non-linear input capacitors202311,737,283Method of forming a stack of non-planar capacitors including capacitors with non-linear polar material and linear dielectric for common mode compensation in a memory bit-cell202311,735,245Read scheme for multi-element gain ferroelectric memory bit-cell with plate-line parallel to word-line to minimize read or write disturb effects202311,729,995Common mode compensation for non-linear polar material 1TnC memory bit-cell202311,727,260Applications of back-end-of-line (BEOL) capacitors in compute-in-memory (CIM) circuits202311,729,991Common mode compensation for non-linear polar material based differential memory bit-cell202311,721,690Method of adjusting threshold of a ferroelectric capacitive-input circuit202311,716,084Pull-up and pull-down networks controlled asynchronously by majority gate or minority gate logic202311,716,085Pull-up and pull-down networks controlled asynchronously by threshold gate logic202311,716,083Asynchronous circuit with threshold logic202311,716,086Asynchronous circuit with majority gate or minority gate logic and 1-input threshold gate202311,711,083Majority gate based low power ferroelectric based adder with reset mechanism202311,705,906Majority logic gate having ferroelectric input capacitors and a pulsing scheme coupled to a conditioning logic202311,705,905Multi-function ferroelectric threshold gate with input based adaptive threshold202311,699,699Multi-function threshold gate with adaptive threshold and stacked planar ferroelectric capacitors202311,694,9403D stack of accelerator die and multi-core processor die202311,694,737Write scheme for multi-element gain ferroelectric memory bit-cell with plate-line parallel to word-line to minimize write disturb effects202311,696,451Common mode compensation for non-linear polar material based 1T1C memory bit-cell202311,696,450Common mode compensation for multi-element non-linear polar material based gain memory bit-cell202311,688,733Method of adjusting threshold of a paraelectric capacitive-input circuit202311,670,352Apparatus and method for endurance of non-volatile memory banks via wear leveling and outlier compensation202311,664,371Multi-function threshold gate with adaptive threshold and stacked planar paraelectric capacitors202311,664,060Writing scheme for multi-element gain ferroelectric memory bit-cell with plate-lines parallel to a bit-line and with individual switches on the plate-lines of the bit-cell202311,664,370Multi-function paraelectric threshold gate with input based adaptive threshold202311,658,664Asynchronous circuit with majority gate or minority gate logic202311,652,482Parallel pull-up and pull-down networks controlled asynchronously by threshold logic gate202311,652,487Parallel pull-up and pull-down networks controlled asynchronously by majority gate or minority gate logic202311,646,071Reading scheme for multi-element gain ferroelectric memory bit-cell with plate-line parallel to bit-line and with individual switches and control on plate-lines of the bit-cell202311,641,205Reset mechanism for a chain of majority or minority gates having paraelectric material202311,641,747Integration of a ferroelectric memory device with a transistor202311,637,090Method of forming a 3D stacked compute and memory202311,616,507Ferroelectric based latch202311,610,619Pulsing scheme for a 1TNC ferroelectric memory bit-cell with plate-line parallel to word-line to minimize read or write disturb effects202311,610,620Pulsing scheme for a 1TNC ferroelectric memory bit-cell with plate-line parallel to bit-line to minimize read or write disturb effects202311,611,345NAND based sequential circuit with ferroelectric or paraelectric material202311,605,413Reading scheme for multi-element gain ferroelectric memory bit-cell with plate-lines parallel to a bit-line and with individual switches on the plate-lines of the bit-cell202311,605,411Method of forming stacked ferroelectric planar capacitors in a memory bit-cell202311,545,204Non-linear polar material based memory bit-cell with multi-level storage by applying different voltage levels202311,545,979Compare logic based sequential circuit with ferroelectric or paraelectric material202311,538,514Writing scheme for 1TnC ferroelectric memory bit-cell with plate-lines parallel to a bit-line and with individual switches on the plate-lines of the bit-cell202211,539,368Majority logic gate with input paraelectric capacitors202211,532,635High-density low voltage multi-element ferroelectric gain memory bit-cell with pillar capacitors202211,532,342Non-linear polar material based differential multi-memory element bit-cell202211,532,344Reading scheme for 1TNC ferroelectric memory bit-cell with plate-line parallel to bit-line and with individual switches on plate-lines of the bit-cell202211,527,278Non-linear polar material based memory bit-cell with multi-level storage by applying different time pulse widths202211,527,277High-density low voltage ferroelectric memory bit-cell202211,521,667Stacked ferroelectric planar capacitors in a memory bit-cell202211,521,9533D stacked ferroelectric compute and memory202211,522,044Ferroelectric capacitor integrated with logic202211,521,668Pulsing scheme for a ferroelectric memory bit-cell with plate-line parallel to word-line to minimize read or write disturb effects202211,521,666High-density low voltage multi-element ferroelectric gain memory bit-cell with planar capacitors202211,514,967Non-linear polar material based differential multi-memory element gain bit-cell202211,514,966Non-linear polar material based multi-memory element bit-cell with multi-level storage202211,509,308Sequential circuit without feedback or memory element202211,502,696In-memory analog neural cache202211,501,813Method of forming stacked ferroelectric non- planar capacitors in a memory bit-cell202211,502,691Method for using and forming low power ferroelectric based majority logic gate adder202211,482,528Pillar capacitor and method of fabricating such202211,482,270Pulsing scheme for a ferroelectric memory bit-cell to minimize read or write disturb effect and refresh logic202211,482,990Vectored sequential circuit with ferroelectric or paraelectric material202211,451,232Majority logic gate based flip-flop with non-linear polar material202211,430,861Ferroelectric capacitor and method of patterning such202211,423,967Stacked ferroelectric non-planar capacitors in a memory bit-cell202211,416,165Low synch dedicated accelerator with in-memory computation capability202211,418,197Majority logic gate having paraelectric input capacitors and a local conditioning mechanism202211,394,3872-input NAND gate with non-linear input capacitors202211,381,244Low power ferroelectric based majority logic gate multiplier202211,374,574Linear input and non-linear output threshold logic gate202211,373,727Apparatus for improving memory bandwidth through read and restore decoupling202211,374,575Majority logic gate with non-linear input capacitors and conditioning logic202211,373,728Method for improving memory bandwidth through read and restore decoupling202211,366,589Efficient method for improving memory bandwidth through read and restore decoupling using restore buffer202211,347,994Weight prefetch for in-memory neural network execution202211,303,280Ferroelectric or paraelectric based sequential circuit202211,295,796Apparatus and method for endurance of non-volatile memory banks via wear leveling and random swap injection202211,296,708Low power ferroelectric based majority logic gate adder202211,294,985Efficient analog in-memory matrix multiplication processor202211,290,111Majority logic gate based and-or-invert logic gate with non-linear input capacitors202211,289,497Integration method of ferroelectric memory array202211,290,112Majority logic gate based XOR logic gate with non-linear input capacitors202211,283,453Low power ferroelectric based majority logic gate carry propagate and serial adder202211,277,137Majority logic gate with non-linear input capacitors202211,165,430Majority logic gate based sequential circuit202111,151,046Programmable interface to in-memory cache processor202111,152,3433D integrated ultra high-bandwidth multi-stacked memory202111,139,270Artificial intelligence processor with three-dimensional stacked memory202111,138,499Applications of back-end-of-line (BEOL) capacitors in compute-in-memory (CIM) circuits2021

Career & activity timeline

Assembled from patent assignee/location history and declaration credentials.

2021–2026Patents assigned to KEPLER COMPUTING INC (246)· patent assignee history
2021–2023Patents assigned to INTEL CORP (8)· patent assignee history
2021–2026Based in US· patent location history
2023Patents assigned to KEPLER CORPATING INC (1)· patent assignee history

Inventor activity

Assignee and location history derived from the patent record.

Assignees
AssigneePatentsSpan
KEPLER COMPUTING INC2462021–2026
INTEL CORP82021–2023
KEPLER CORPATING INC12023
Locations
LocationPatentsSpan
US2542021–2026