Inventor
Yosuke Ide
Inventor
Niigata, JP
Overview
Patents· 82 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
B82Yprimary
B82YSpecific uses or applications of nanostructures19%
G01RMeasuring electric variables19%
G11BInformation storage based on relative movement between record carrier and transducer18%
H01FMagnets15%
H10NElectric solid-state devices not otherwise provided for12%
Y10TTechnical subjects covered by former us classification9%
C23CCoating metallic material2%
H01LSemiconductor devices2%
G11CStatic stores1%
Y10STechnical subjects covered by former uspc cross-reference art collections [xracs] and digests1%
PatentTitleYear
10,495,671Current detection device201910,184,993Magnetometric sensor and current sensor20199,945,913Magnetic sensor, method for manufacturing magnetic sensor, and current sensor20189,523,746'Giant magnetoresistance element and current sensor using the same'20169,435,831'Current sensor'20169,229,032'Current sensor'20169,207,264'Current sensor'20158,952,689'Magnetic sensor and magnetic balance type current sensor utilizing same'20158,760,158'Current sensor'20148,754,642'Magnetic balance type current sensor'20148,519,704'Magnetic-balance-system current sensor'20138,487,612'Current sensor'20138,476,899'Magnetic sensor and magnetic balance type current sensor including the same'20138,437,107'Magnetic coupling type isolator'20138,410,893'Magnetic detector and method for manufacturing the same'20138,395,383'Current sensor including magnetic detecting element'20138,269,492'Magnetic balance type current sensor'20128,270,127'Magnetic coupling-type isolator'20128,222,769'Magnetic coupling type isolator'20128,208,231'Tunneling magnetic sensing element with insertion magnetic layer inspired into soft magnetic layer'20128,124,253'Tunneling magnetic sensing element including MGO film as insulating barrier layer'20128,054,588'Tunneling magnetoresistive element including multilayer free magnetic layer having inserted nonmagnetic metal sublayer'20118,045,300'Tunneling magnetic sensing element and method for producing same'20118,023,233'Tunneling magnetic sensing element including free magnetic layer and IrMn protective layer disposed thereon and method for manufacturing the same'20118,009,391'Magnetic sensing element and method for manufacturing the same'20117,969,693'Tunnel magnetoresistive sensor in which at least part of pinned layer is composed of CoFeB layer and method for manufacturing the tunnel magnetoresistive sensor'20117,969,690'Tunneling magnetoresistive element which includes Mg-O barrier layer and in which nonmagnetic metal sublayer is disposed in one of magnetic layers'20117,961,442'Tunneling magnetic detecting element having insulation barrier layer and method for making the same'20117,933,100'Tunneling magnetic sensor including free magnetic layer and magnesium protective layer disposed thereon'20117,916,436'Tunneling magnetic sensor including platinum layer and method for producing the same'20117,907,370'Tunneling magnetic sensing element having free layer containing CoFe alloy'20117,898,776'Tunneling magnetic sensing element including enhancing layer having high Fe concentration in the vicinity of barrier layer'20117,881,024'Tunnel-type magnetic detecting element and method of manufacturing the same'20117,800,866'Magnetic sensing element containing quaternary Heusler alloy Co2Mn (Ge1-xSnx) which constitutes a free magnetic layer or pinned magnetic layer'20107,800,867'CPP GMR head with antiferromagnetic layer disposed at rear of ferrimagnetic pinned layer'20107,787,221'Tunneling magnetic sensing element including non-magnetic metal layer between magnetic layers'20107,760,473'Magnetoresistance element employing Heusler alloy as magnetic layer'20107,738,218'Magnetic detection head and method for manufacturing the same'20107,724,481'Magnetic sensing element including free magnetic layer or pinned magnetic layer having two sublayers that are composed of different CoMn-based heusler alloys'20107,643,254'Tunnel-effect type magnetic sensor having free layer including non-magnetic metal layer'20107,616,410'Magnetic detecting element having free layer formed of NiFe alloy and method of manufacturing the same'20097,609,489'Magnetic sensor using NiFe alloy for pinned layer'20097,599,155'Self-pinned CPP giant magnetoresistive head with antiferromagnetic film absent from current path'20097,567,413'Magnetic detecting element with diffusion-preventing layer between spacer Cu and magnetic layer, and method of manufacturing the same'20097,564,661'Magnetic sensing element including free layer having gradient composition and method for manufacturing the same'20097,558,029'Magnetic detectible head comprising free layer'20097,554,776'CCP magnetic detecting element including a self-pinned CoFe layer'20097,502,210'CPP magnetic detecting device containing NiFe alloy on free layer thereof'20097,499,248'Magnetic detective head comprising free layer'20097,499,249'Spin valve-GMR element in which a non-metal laminate layer is provided as a free magnetic layer and method of manufacturing the same'20097,480,122'Magnetic detecting device having free layer or pinned layer formed by lamination of magnetic alloy and Cu layer and method of manufacturing magnetic detecting device'20097,466,525'Magnetic sensing element including laminated film composed of half-metal and NiFe alloy as free layer'20087,362,546'Spin-valve magnetoresistive element having fixed magnetic layer of epitaxal laminate including magnetic layer and nonmagnetic layer'20087,336,453'Magnetic sensing element including pinned layer and/or free layer composed of [110] crystal planes-oriented Heusler alloy'20087,310,207'Magnetic sensing element including magnetic layer composed of Heusler alloy disposed on underlayer having {111}-oriented fcc structure'20077,295,408'Dual type magnetic sensing element wherein ΔR×A in upstream part in flow direction of electric current is smaller than ΔR×A in downstream part'20077,220,499'CPP giant magnetoresistive head having antiferromagnetic film disposed in rear of element'20077,158,354'Dual-type magnetic detecting element in which free magnetic layer and pinned magnetic layer have suitably selected β values'20077,126,797'Spin valve magnetoresistive element having pinned magnetic layer composed of epitaxial laminated film having magnetic sublayers and nanomagnetic interlayer'20067,077,936'Method of producing exchange coupling film and method of producing magnetoresistive sensor by using exchange coupling film'20067,054,116'Spin valve element and thin film magnetic head'20067,045,224'Magnetic detecting element having antiferromagnetic film having predetermined space in track width direction and method for manufacturing the same'20067,029,771'Magnetic sensor having free layer additionally provided with magnetic anisotropy by shape anisotropy'20067,005,014'Method of producing exchange coupling film and method of producing magnetoresistive sensor by using exchange coupling film'20066,992,867'Spin valve element and thin film magnetic head having antiferromagnetic coupled layers'20066,893,734'Magnetic sensing element with improved sensitivity and method for making the same'20056,879,472'Exchange coupling film and electoresistive sensor using the same'20056,856,494'Spin-valve type thin film magnetic element having bias layers and ferromagnetic layers'20056,847,508'Spin valve thin film magnetic element and thin film magnetic head'20056,806,804'Magnetic detecting element having -values selected for free magnetic layer and pinned magnetic layer'20046,796,795'Method and apparatus for loading substrate in semiconductor manufacturing apparatus'20046,790,541'Exchange coupling film and electroresistive sensor using the same'20046,764,778'Thin film magnetic element with accurately controllable track width and method of manufacturing the same'20046,757,962'Method for manufacturing exchange bias type magnetic field sensing element'20046,678,128'Exchange coupling film and electroresistive sensor using the same'20046,648,985'Method of producing exchange coupling film and method of producing magnetoresistive sensor by using exchange coupling'20036,639,762'Spin valve thin-film magnetic device having free magnetic layer in ferrimagnetic state and manufacturing method therefor'20036,635,366'Spin valve thin film magnetic element and thin film magnetic head'20036,608,739'Spin valve thin film magnetic element having first and second free magnetic layers having antiparallel magnetization directions'20036,607,641'Method of producing exchange coupling film and method of producing magnetoresistive sensor by using the exchange coupling film'20036,586,121'Spin-valve thin-film magnetic element'20036,500,570'Spin-valve magnetoresistive element and method for making the same'2002Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
2002–2019Patents assigned to ALPS ELECTRIC CO LTD (44)· patent assignee history
2002–2019Based in Niigata, JP· patent location history
2007–2019Based in Tokyo, JP· patent location history
2008–2011Patents assigned to TDK CORP (23)· patent assignee history
2010Based in Niigaka-ken, JP· patent location history
2012–2015Patents assigned to IDE YOSUKE (13)· patent assignee history
2012–2015Patents assigned to SAITO MASAMICHI (13)· patent assignee history
2012–2016Patents assigned to ALPS GREEN DEVICES CO LTD (11)· patent assignee history
2013Based in Niihata-Ken, JP· patent location history
2013Based in Miyagi, JP· patent location history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| ALPS ELECTRIC CO LTD | 44 | 2002–2019 |
| TDK CORP | 23 | 2008–2011 |
| IDE YOSUKEself | 13 | 2012–2015 |
| SAITO MASAMICHI | 13 | 2012–2015 |
| ALPS GREEN DEVICES CO LTD | 11 | 2012–2016 |
Locations
| Location | Patents | Span |
|---|---|---|
| Niigata, JP | 74 | 2002–2019 |
| Tokyo, JP | 3 | 2007–2019 |
| Niigaka-ken, JP | 2 | 2010 |
| Niihata-Ken, JP | 1 | 2013 |
| Miyagi, JP | 1 | 2013 |