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Inventor

Naomi Shida

Inventor
Tokyo, JP

Overview

49→
Patents
1997–2020
Patent span
Electricity
Primary field (CPC H)

Patents· 49 as inventor

Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.

G03Fprimary
G03FPhotomechanical production of textured or patterned surfaces, e.g. for printing, for processing of semiconductor devices19%
Y10STechnical subjects covered by former uspc cross-reference art collections [xracs] and digests16%
H10HInorganic light-emitting semiconductor devices having potential barriers8%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h108%
C09KMaterials for miscellaneous applications, not provided for elsewhere8%
H05BElectric heating5%
Y10TTechnical subjects covered by former us classification4%
C08FMacromolecular compounds obtained by reactions only involving carbon-to-carbon unsaturated bonds3%
H01LSemiconductor devices3%
H10KOrganic electric solid-state devices3%
PatentTitleYear
10,644,172Transparent electrode, manufacturing method thereof and electronic device employing the transparent electrode202010,431,702Transparent electrode, manufacturing method thereof and electronic device employing the transparent electrode201910,018,908Pattern forming method20189,588,418'Pattern forming method'20179,550,322'Near-field exposure mask, resist pattern forming method, device manufacturing method, near-field exposure method, pattern forming method, near-field optical lithography member, and near-field nanoimprint method'20179,409,119'Acid gas absorbent, acid gas removal method, and acid gas removal device'20169,229,161'Waveguide and integrated circuit'20169,029,047'Near-field exposure mask, resist pattern forming method, device manufacturing method, near-field exposure method, pattern forming method, near-field optical lithography member, and near-field nanoimprint method'20158,974,852'Method of manufacturing light-emitting device with fluorescent layer'20158,945,798'Near-field exposure mask and pattern forming method'20158,294,165'Semiconductor light-emitting device'20127,932,666'Light-emitting device with fluorescent layer'20117,923,740'Light emission device'20117,799,245'Fluorescent substance and light-emitting device using the same'20107,781,958'Light emitting device'20107,663,307'Light-emitting device'20107,635,438'Luminescent material'20097,601,277'Fluorescent substance and light-emitting device using the same'20097,572,391'Fluorescent substance and light-emitting device using the same'20097,525,127'Semiconductor light emitting device'20097,510,784'Light emitting device formed using rare earth complex and luminescent medium'20097,468,147'Fluorescent substance and light-emitting device using the same'20087,414,272'Fluorescent substance containing nitrogen, method for manufacturing the same, and light-emitting device'20087,250,117'Light emitting device formed using rare earth complex and luminescent medium'20077,201,858'Fluorescent substance, method of manufacturing fluorescent substance, and light emitting device using the fluorescent substance'20077,163,781'Process for producing a semiconductor device'20077,119,156'Resist resin'20067,070,905'Pattern forming process'20067,063,932'Resist resin'20067,029,823'Resist composition'20066,974,658'HIGH MOLECULAR COMPOUND, MONOMER COMPOUNDS AND PHOTOSENSITIVE COMPOSITION FOR PHOTORESIST, PATTERN FORMING METHOD UTILIZING PHOTOSENSITIVE COMPOSITION, AND METHOD OF MANUFACTURING ELECTRONIC COMPONENTS'20056,824,957'Resin useful for resist, resist composition and pattern forming process using the same'20046,660,450'Resin useful for resist, resist composition and pattern forming process using the same'2003RE038256'Photosensitive composition'20036,541,597'Resin useful for resist, resist composition and pattern forming process using the same'20036,440,636'Polymeric compound and resin composition for photoresist'20026,410,748'Alicycli c group-containing monomer'20026,303,266'Resin useful for resist, resist composition and pattern forming process using the same'20016,291,129'Monomer, high molecular compound and photosensitive composition'20016,280,897'Photosensitive composition, method for forming pattern using the same, and method for manufacturing electronic parts'20016,228,552'Photo-sensitive material, method of forming a resist pattern and manufacturing an electronic parts using photo-sensitive material'20016,071,670'Transparent resin, photosensitive composition, and method of forming a pattern'20006,060,207'Photosensitive material'20006,045,968'Photosensitive composition'20005,932,391'Resist for alkali development'19995,863,699'Photo-sensitive composition'19995,853,952'Color developing organic material, color developing resin composition and colored thin film pattern'19985,837,419'Photosensitive composition'19985,691,101'Photosensitive composition'1997

Career & activity timeline

Assembled from patent assignee/location history and declaration credentials.

1997–2020Patents assigned to TOSHIBA KK (46)· patent assignee history
1997–2003Based in Kawasaki, JP· patent location history
2001–2020Based in Minato-ku, JP· patent location history
2002–2018Based in Tokyo, JP· patent location history
2006Based in Saitama-shi, JP· patent location history
2007–2011Patents assigned to TOSHIBA MATERIALS CO LTD (7)· patent assignee history
2012–2016Patents assigned to SHIDA NAOMI (5)· patent assignee history
2012–2015Patents assigned to HATTORI YASUSHI (2)· patent assignee history
2015–2016Patents assigned to YOSHIMURA REIKO (3)· patent assignee history

Inventor activity

Assignee and location history derived from the patent record.

Assignees
AssigneePatentsSpan
TOSHIBA KK461997–2020
TOSHIBA MATERIALS CO LTD72007–2011
SHIDA NAOMIself52012–2016
YOSHIMURA REIKO32015–2016
HATTORI YASUSHI22012–2015
Locations
LocationPatentsSpan
Tokyo, JP232002–2018
Kawasaki, JP131997–2003
Minato-ku, JP122001–2020
Saitama-shi, JP12006