Inventor
TZER-MIN SHEN
Inventor
TW
Overview
Patents· 25 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
H10Dprimary
H10DInorganic electric semiconductor devices29%
H01LSemiconductor devices26%
B82YSpecific uses or applications of nanostructures17%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1014%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h108%
H10BElectronic memory devices3%
G11CStatic stores2%
PatentTitleYear
12,477,784Dipoles in semiconductor devices202512,426,292Semiconductor device with tunable threshold voltage and method for manufacturing the same202512,382,691Effective work function tuning via silicide induced interface dipole modulation for metal gates202512,302,640Integrated circuit structure and method with hybrid orientation for FinFET202512,300,721Semiconductor device structure with channel and method for forming the same202512,289,893Semiconductor devices including FTJ structure202512,288,722Spacer structure for semiconductor device and method for forming the same202512,218,2052D-channel transistor structure with source-drain engineering202512,166,074Gate structure in semiconductor device and method of forming the same202412,136,570Graphene layer for low resistance contacts and damascene interconnects202412,087,819Dual channel structure202412,040,372Contact structures in semiconductor devices202411,990,522Effective work function tuning via silicide induced interface dipole modulation for metal gates202411,942,134Memory circuit and write method202411,894,461Dipoles in semiconductor devices202411,855,192Semiconductor device and manufacturing method thereof202311,843,032Semiconductor device structure with channel and method for forming the same202311,810,960Contact structures in semiconductor devices202311,735,594Integrated circuit structure and method with hybrid orientation for FinFET202311,728,3912d-channel transistor structure with source-drain engineering202311,545,397Spacer structure for semiconductor device and method for forming the same202311,527,622Effective work function tuning via silicide induced interface dipole modulation for metal gates202211,508,427Memory circuit and write method202211,489,057Contact structures in semiconductor devices202211,476,333Dual channel structure2022Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
2022–2025Patents assigned to TAIWAN SEMICONDUCTOR MFG CO LTD (25)· patent assignee history
2022–2025Based in TW· patent location history
2023Patents assigned to TSMC NANJING COMPANY LTD (1)· patent assignee history
2024Patents assigned to TAWIAN SEMICONDUCTOR MFG COMPANY LTD (1)· patent assignee history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| TAIWAN SEMICONDUCTOR MFG CO LTD | 25 | 2022–2025 |
| TAWIAN SEMICONDUCTOR MFG COMPANY LTD | 1 | 2024 |
| TSMC NANJING COMPANY LTD | 1 | 2023 |
Locations
| Location | Patents | Span |
|---|---|---|
| TW | 25 | 2022–2025 |