Inventor
Tatsuya Ohguro
Inventor
Yokohama, JP
Overview
Patents· 43 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
H10Dprimary
H10DInorganic electric semiconductor devices32%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1011%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h109%
B81CProcesses or apparatus specially adapted for the manufacture or treatment of microstructural devices or systems6%
H01LSemiconductor devices6%
B81BMicrostructural devices or systems, e.g. micromechanical devices5%
H01GCapacitors4%
H10NElectric solid-state devices not otherwise provided for4%
G01LMeasuring force, stress, torque, work, mechanical power, mechanical efficiency, or fluid pressure3%
H01HElectric switches3%
PatentTitleYear
11,038,721Digital isolator202110,998,437Semiconductor device202110,246,324Strain and pressure sensing device, microphone, method for manufacturing strain and pressure sensing device, and method for manufacturing microphone20199,831,290Semiconductor memory device having local bit line with insulation layer formed therein20179,790,087'Strain and pressure sensing device, microphone, method for manufacturing strain and pressure sensing device, and method for manufacturing microphone'20179,318,615'Semiconductor device and method for fabricating semiconductor device'20169,224,850'Semiconductor device and method of manufacturing the same'20159,196,698'Semiconductor device having a gate dielectric film which is thinner below a source or drain electrode than below a channel region'20158,958,574'Strain and pressure sensing device, microphone, method for manufacturing strain and pressure sensing device, and method for manufacturing microphone'20158,823,101'ESD protection semiconductor device having an insulated-gate field-effect transistor'20148,735,999'Semiconductor device'20148,436,464'Hollow sealing structure and manufacturing method for hollow sealing structure'20138,154,089'Semiconductor device'20127,983,889'Simulation method and simulation apparatus for LDMOSFET'20117,932,116'Hollow sealing structure and manufacturing method for hollow sealing structure'20117,923,788'Semiconductor device'20117,679,142'Semiconductor wafer, semiconductor device and manufacturing method of semiconductor device'20107,655,995'Semiconductor device using MEMS technology'20107,582,940'Semiconductor device using MEMS technology'20097,541,649'Semiconductor device having SOI substrate'20097,479,726'MEMS device using an actuator'20097,427,797'Semiconductor device having actuator'20087,402,907'Semiconductor device and manufacturing method thereof'20087,282,752'MOSFET with a thin gate insulating film'20077,176,529'Semiconductor device and method of manufacturing the same'20077,177,134'Variable-capacitance element, variable-capacitance device, and portable phone including variable-capacitance device'20077,045,415'MIM capacitor having flat diffusion prevention films'20066,987,309'Semiconductor device applied to a variable capacitance capacitor and amplifier'20066,933,590'Semiconductor device comprising plurality of semiconductor areas having the same top surface and different film thicknesses and manufacturing method for the same'20056,929,990'MOSFET with a thin gate insulating film'20056,894,331'MIM capacitor having flat diffusion prevention films'20056,885,069'Semiconductor device in which occurrence of slips is suppressed'20056,777,756'Semiconductor device'20046,675,368'Apparatus for and method of preparing pattern data of electronic part'20046,642,560'MOSFET with a thin gate insulating film'20036,459,134'Semiconductor devices which have analog and digital circuits integrated on a common substrate'20026,410,952'MOSFET with a thin gate insulating film'20026,229,164'MOSFET with a thin gate insulating film'20015,990,516'MOSFET with a thin gate insulating film'19995,955,761'Semiconductor device and manufacturing method thereof'19995,840,626'Semiconductor device and method of manufacturing the same'19985,780,901'Semiconductor device with side wall conductor film'19985,736,767'Semiconductor device including a CMOSFET of a single-gate'1998Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
1998–2021Patents assigned to TOSHIBA KK (41)· patent assignee history
1998–2017Based in Yokohama, JP· patent location history
2007–2019Based in Kanagawa, JP· patent location history
2012–2015Patents assigned to OHGURO TATSUYA (5)· patent assignee history
2015Patents assigned to FUJI YOSHIHIKO (1)· patent assignee history
2015Patents assigned to FUKUZAWA HIDEAKI (1)· patent assignee history
2015Based in Yokohama-shi, JP· patent location history
2021Patents assigned to TOSHIBA ELECTRONIC DEVICES & STORAGE CORP (2)· patent assignee history
2021Based in Nonoichi Ishikawa, JP· patent location history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| TOSHIBA KK | 41 | 1998–2021 |
| OHGURO TATSUYAself | 5 | 2012–2015 |
| TOSHIBA ELECTRONIC DEVICES & STORAGE CORP | 2 | 2021 |
| FUJI YOSHIHIKO | 1 | 2015 |
| FUKUZAWA HIDEAKI | 1 | 2015 |
Locations
| Location | Patents | Span |
|---|---|---|
| Yokohama, JP | 33 | 1998–2017 |
| Kanagawa, JP | 7 | 2007–2019 |
| Nonoichi Ishikawa, JP | 2 | 2021 |
| Yokohama-shi, JP | 1 | 2015 |