Inventor

Akira Kuroyanagi

Inventor

Okazaki, JP

Overview

1990–2012

Patent span

Electricity

Primary field (CPC H)

Patents· 43 as inventor

Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.

H10Dprimary

H10DInorganic electric semiconductor devices41%

Y10STechnical subjects covered by former uspc cross-reference art collections [xracs] and digests19%

H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1015%

B29CShaping or joining of plastics4%

H10BElectronic memory devices4%

H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h104%

C23CCoating metallic material2%

F02MSupplying combustion engines in general with combustible mixtures or constituents thereof2%

F04DNon-positive-displacement pumps2%

H02KDynamo-electric machines2%

PatentTitleYear

8,333,007'Method for manufacturing motor device for a fuel pump'2012 8,076,718'Insulated gate semiconductor device and method for producing the same'2011 7,859,165'Fuel pump and motor device for the same'2010 7,586,151'Insulated gate semiconductor device'2009 7,470,953'Insulated gate type semiconductor device and manufacturing method thereof'2008 7,459,118'Heated medium supplying method and structure for secondary molding of resin molded component'2008 7,438,842'Method of manufacturing resin molding and change-over device for changing over between heating medium and resin material in process of secondary forming'2008 7,354,829'Trench-gate transistor with ono gate dielectric and fabrication process therefor'2008 7,300,274'Change-over device for changing over between a heating medium and a resin material at a time of a secondary forming'2007 7,064,033'Semiconductor device and method of manufacturing same'2006 6,972,459'Metal oxide semiconductor transistor having a nitrogen cluster containing layer embedded in the substrate'2005 6,949,434'Method of manufacturing a vertical semiconductor device'2005 6,946,711'Semiconductor device'2005 6,903,417'Power semiconductor device'2005 6,864,532'Semiconductor device and method for manufacturing the same'2005 6,809,348'Semiconductor device and method for manufacturing the same'2004 6,649,478'Semiconductor device and method of manufacturing same'2003 6,525,400'Semiconductor memory device and method of manufacturing the same'2003 6,498,366'Semiconductor device that exhibits decreased contact resistance between substrate and drain electrode'2002 6,469,345'Semiconductor device and method for manufacturing the same'2002 6,373,093'Semiconductor memory device and method of manufacturing the same'2002 6,365,458'Semiconductor memory device and method of manufacturing the same'2002 6,137,156'Semiconductor device employing silicon nitride layers with varied hydrogen concentration'2000 5,994,187'Method of manufacturing a vertical semiconductor device'1999 5,877,095'Method of fabricating a semiconductor device having a silicon nitride film made of silane, ammonia and nitrogen'1999 5,830,771'Manufacturing method for semiconductor device'1998 5,798,550'Vertical type semiconductor device and gate structure'1998 5,714,408'Method of forming silicon nitride with varied hydrogen concentration'1998 5,689,130'Vertical semiconductor device with ground surface providing a reduced ON resistance'1997 5,663,096'Method of manufacturing a vertical semiconductor device with ground surface providing a reduced ON resistance'1997 5,654,560'Semiconductor device with current detecting function and method of producing the same'1997 5,592,004'Silicon nitride film having a short absorption wavelength and surrounding crystal-like grain boundaries'1997 5,550,067'Method for producing semiconductor device having DMOS and NMOS elements formed in the same substrate'1996 5,534,454'Method of producing a semiconductor device having accurate current detection'1996 5,470,771'Method of manufacturing a floating gate memory device'1995 5,462,896'Method of forming a sidewall on a semiconductor element'1995 5,453,390'Method of producing semiconductor device with current detecting function'1995 5,410,171'Vertical type semiconductor with main current section and emulation current section'1995 5,250,449'Vertical type semiconductor device and method for producing the same'1993 5,242,862'Semiconductor device and method of manufacturing same'1993 5,063,423'Semiconductor memory device of a floating gate tunnel oxide type'1991 5,017,979'EEPROM semiconductor memory device'1991 4,975,390'Method of fabricating a semiconductor pressure sensor'1990

Career & activity timeline

Assembled from patent assignee/location history and declaration credentials.

1990–2002Patents assigned to NIPPON DENSO CO (20)· patent assignee history

1990–2011Based in Okazaki, JP· patent location history

1997–1999Based in Kariya, JP· patent location history

1998–2012Patents assigned to DENSO CORP (22)· patent assignee history

2007–2012Based in Chiryu, JP· patent location history

2008–2011Patents assigned to TOYOTA MOTOR CO LTD (3)· patent assignee history

2011–2012Patents assigned to KUROYANAGI AKIRA (2)· patent assignee history

2011Patents assigned to HAMADA KIMIMORI (1)· patent assignee history

Inventor activity

Assignee and location history derived from the patent record.

Assignees

Assignee	Patents	Span
DENSO CORP	22	1998–2012
NIPPON DENSO CO	20	1990–2002
TOYOTA MOTOR CO LTD	3	2008–2011
KUROYANAGI AKIRAself	2	2011–2012
HAMADA KIMIMORI	1	2011

Locations

Location	Patents	Span
Okazaki, JP	36	1990–2011
Chiryu, JP	5	2007–2012
Kariya, JP	2	1997–1999