Inventor
Riichi Katoh
Inventor
Yokohama, JP
Overview
Patents· 12 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
H10Dprimary
H10DInorganic electric semiconductor devices53%
B82YSpecific uses or applications of nanostructures21%
H01PWaveguides11%
Y10STechnical subjects covered by former uspc cross-reference art collections [xracs] and digests11%
H10HInorganic light-emitting semiconductor devices having potential barriers5%
PatentTitleYear
6,937,117'High-frequency device'20056,778,042'High-frequency device'20046,333,516'Quantum effect device'20016,060,743'Semiconductor memory device having multilayer group IV nanocrystal quantum dot floating gate and method of manufacturing the same'20005,844,279'Single-electron semiconductor device'19985,710,436'Quantum effect device'19985,670,790'Electronic device'19975,336,909'Bipolar transistor with an improved collector structure'19945,177,583'Heterojunction bipolar transistor'19935,041,882'Heterojunction bipolar transistor'19915,010,382'Heterojunction bipolar transistor having double hetero structure'19914,933,732'Heterojunction bipolar transistor'1990Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
1990–2005Patents assigned to TOSHIBA KK (11)· patent assignee history
1990–2001Based in Yokohama, JP· patent location history
1997Patents assigned to TOKYO SHIBAURA ELECTRIC CO (1)· patent assignee history
2004–2005Based in Cambridge, GB· patent location history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| TOSHIBA KK | 11 | 1990–2005 |
| TOKYO SHIBAURA ELECTRIC CO | 1 | 1997 |
Locations
| Location | Patents | Span |
|---|---|---|
| Yokohama, JP | 10 | 1990–2001 |
| Cambridge, GB | 2 | 2004–2005 |