Inventor

Yi-Wei Chiu

Inventor
Kaohsiung, TW

Overview

77→
Patents
2010–2020
Patent span
Electricity
Primary field (CPC H)

Patents· 77 as inventor

Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.

H01Lprimary
H01LSemiconductor devices28%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1022%
H10DInorganic electric semiconductor devices20%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h1019%
H01JElectric discharge tubes or discharge lamps3%
H04LTransmission of digital information, e.g. telegraphic communication2%
G06FElectric digital data processing1%
G11CStatic stores1%
B08BCleaning in general0%
C23CCoating metallic material0%
PatentTitleYear
10,879,051Method for controlling exposure region in bevel etching process for semiconductor fabrication202010,879,109Method for forming semiconductor device structure202010,861,800Integrated circuit structure having a crown-shaped semiconductor strip and an isolation region recessed in the substrate202010,854,603Semiconductor device and method202010,847,349Moving focus ring for plasma etcher202010,833,914Device or vendor independent network switch management via embedded management controller stack202010,825,727Metal gates of transistors having reduced resistivity202010,825,739FinFET devices and methods of forming the same202010,804,149Self-aligned spacers and method forming same202010,770,356Contact structure and method of fabricating the same202010,763,162Interconnect structure of semiconductor device202010,741,381CMP cleaning system and method202010,734,246Heat shield for chamber door and devices manufactured using same202010,727,346FinFET device and method of forming202010,707,123Etch profile control of interconnect structures202010,692,762Semiconductor device with gate stack202010,679,891Methods of forming interconnect structures using a vacuum environment202010,679,950Methods of forming recesses in substrates by etching dummy Fins202010,679,896Contact structure for semiconductor device202010,664,551Intuitive user interface (UI) for device or vendor independent network switch management via embedded management controller202010,651,079Semiconductor device and manufacturing method thereof202010,629,480Method for forming semiconductor device structure202010,616,348System and method for providing multiple IPMI serial over LAN (SOL) sessions in management controller stack202010,566,232Post-etch treatment of an electrically conductive feature202010,529,543Etch process with rotatable shower head202010,522,408FinFET device and method of forming same201910,510,593Contact openings and methods forming same201910,510,516Moving focus ring for plasma etcher201910,510,875Source and drain structure with reduced contact resistance and enhanced mobility201910,510,596Metal gates of transistors having reduced resistivity201910,510,615FinFET devices and methods of forming the same201910,510,598Self-aligned spacers and method forming same201910,504,738Focus ring for plasma etcher201910,504,720Etching using chamber with top plate formed of non-oxygen containing material201910,495,970Critical dimension uniformity201910,483,165Methods for forming contact plugs with reduced corrosion201910,460,995Method of manufacture of a FinFET device201910,304,729Method of forming interconnect structures201910,297,555Integrated circuit structure having crown-shaped semiconductor strips and recesses in the substrate from etched dummy fins201910,290,547Method of manufacturing a semiconductor device with metal gate etch selectivity control201910,284,418Network switch management via embedded management controller using management information base (MIB) to JSON parser201910,269,938Semiconductor device structure having a doped passivation layer201910,269,624Contact plugs and methods of forming same201910,269,917Method of forming a FinFET with work function tuning layers having stair-step increment sidewalls201910,199,252Thermal pad for etch rate uniformity201910,186,456Methods for forming contact plugs with reduced corrosion201910,170,555Intermetallic doping film with diffusion in source/drain201910,163,650System and method for selective nitride etch201810,163,642Semiconductor device, method and tool of manufacture201810,163,715FinFET device and method of forming same201810,157,782Semiconductor device and manufacturing method thereof201810,153,373FinFET device and method of forming201810,141,225Metal gates of transistors having reduced resistivity201810,121,873Metal gate and contact plug design and method forming same201810,083,863Contact structure for semiconductor device201810,079,178Formation method of semiconductor device structure using multilayer resist layer201810,074,563Structure and formation method of interconnection structure of semiconductor device201810,037,918Contact structure and method of fabricating the same201810,032,661Semiconductor device, method, and tool of manufacture201810,020,379Method for forming semiconductor device structure using double patterning20189,972,526Method for forming conductive structure in semiconductor structure20189,905,456'Semiconductor device and manufacturing method thereof'20189,899,526'Fin-type field effect transistor structure and manufacturing method thereof'20189,881,834'Contact openings and methods forming same'20189,865,697'Semiconductor device structure and method for forming the same'20189,837,539FinFET device and method of forming20179,812,363'FinFET device and method of forming same'20179,721,805'Formation method of semiconductor device structure'20179,543,410'Semiconductor device and formation thereof'20179,391,072'Sacrificial oxide with uniform thickness'20169,136,109'Sacrificial oxide with uniform thickness'20158,837,207'Static memory and memory cell thereof'20148,693,237'Single-ended SRAM with cross-point data-aware write operation'20148,305,057'Power supply and over voltage protection apparatus and over voltage protection method'20128,049,213'Feature dimension measurement'20118,010,817'Multi-processor system and performance adjustment method thereof'20117,856,108'Method for preventing an output device from being damaged'2010

Career & activity timeline

Assembled from patent assignee/location history and declaration credentials.

2010–2020Based in Taipei, TW· patent location history
2011–2012Patents assigned to ASUSTEK COMP INC (2)· patent assignee history
2011–2020Based in Kaohsiung, TW· patent location history
2012–2014Patents assigned to CHIU YI-WEI (2)· patent assignee history
2014Patents assigned to UNIV NAT CHIAO TUNG (2)· patent assignee history
2014–2019Based in Hsinchu, TW· patent location history
2015–2020Patents assigned to TAIWAN SEMICONDUCTOR MFG CO LTD (67)· patent assignee history
2020Patents assigned to AMERICAN MEGATRENDS INT LLC (3)· patent assignee history

Inventor activity

Assignee and location history derived from the patent record.

Assignees
AssigneePatentsSpan
TAIWAN SEMICONDUCTOR MFG CO LTD672015–2020
AMERICAN MEGATRENDS INT LLC32020
ASUSTEK COMP INC22011–2012
CHIU YI-WEIself22012–2014
UNIV NAT CHIAO TUNG22014
Locations
LocationPatentsSpan
Kaohsiung, TW672011–2020
Taipei, TW72010–2020
Hsinchu, TW32014–2019