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Inventor

Masashi Ichikawa

Inventor
Nishishirakawa, JP

Overview

13→
Patents
1985–2021
Patent span
Electricity
Primary field (CPC H)

Patents· 13 as inventor

Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.

H10Pprimary
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1021%
G01BMeasuring length, thickness or similar linear dimensions10%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h1010%
B23KSoldering or unsoldering7%
B65DContainers for storage or transport of articles or materials, e.g. bags, barrels, bottles, boxes, cans, cartons, crates, drums, jars, tanks, hoppers, forwarding containers3%
C10MLubricating compositions3%
C10NIndexing scheme associated with subclass c10m relating to lubricating compositions3%
C22CAlloys3%
C23CCoating metallic material3%
C25DProcesses for the electrolytic or electrophoretic production of coatings3%
PatentTitleYear
11,004,787Semiconductor chip202110,982,712Sliding member202110,812,665Information transmitting apparatus, multifunctional peripheral, information transmitting method, and non-transitory recording medium20207,474,386'Wafer flatness evaluation method, wafer flatness evaluation apparatus carrying out the evaluation method, wafer manufacturing method using the evaluation method, wafer quality assurance method using the evaluation method, semiconductor device manufacturing method using the evaluation method and semiconductor device manufacturing method using a wafer evaluated by the evaluation method'20097,365,830'Wafer flatness evaluation method, wafer flatness evaluation apparatus carrying out the evaluation method, wafer manufacturing method using the evaluation method, wafer quality assurance method using the evaluation method, semiconductor device manufacturing method using the evaluation method and semiconductor device manufacturing method using a wafer evaluated by the evaluation method'20087,276,427'Method for manufacturing SOI wafer'20077,230,680'Wafer flatness evaluation method, wafer flatness evaluation apparatus carrying out the evaluation method, wafer manufacturing method using the evaluation method, wafer quality assurance method using the evaluation method, semiconductor device manufacturing method using the evaluation method and semiconductor device manufacturing method using a wafer evaluated by the evaluation method'20077,203,559'Method for manufacturing semiconductor wafer, method for receiving order for manufacture of semiconductor wafer, and system for receiving order for manufacture of semiconductor wafer'20076,294,228'Method for forming thin films'20016,048,792'Method for manufacturing an interconnection structure in a semiconductor device'20005,047,608'Method and apparatus for resistance welding wherein the electrode axis is included with respect to the electrode forcing axis'19914,561,561'Container having an easy opening end with a tab affixed by ultrasonic welding'19854,506,134'Flash butt welding method'1985

Career & activity timeline

Assembled from patent assignee/location history and declaration credentials.

1985–1991Patents assigned to NIPPON STEEL CORP (3)· patent assignee history
1985–1991Based in Sagamihara, JP· patent location history
2000–2001Patents assigned to NEC CORP (2)· patent assignee history
2000–2001Based in Tokyo, JP· patent location history
2007–2009Patents assigned to SHINETSU HANDOTAI KK (4)· patent assignee history
2007–2009Patents assigned to NIKON CORP (3)· patent assignee history
2007–2009Based in Nishishirakawa, JP· patent location history
2007Based in Fukushima, JP· patent location history
2008–2009Patents assigned to TOSHIBA KK (2)· patent assignee history
2021Based in Yokkaichi, JP· patent location history

Inventor activity

Assignee and location history derived from the patent record.

Assignees
AssigneePatentsSpan
SHINETSU HANDOTAI KK42007–2009
NIKON CORP32007–2009
NIPPON STEEL CORP31985–1991
NEC CORP22000–2001
TOSHIBA KK22008–2009
Locations
LocationPatentsSpan
Nishishirakawa, JP32007–2009
Sagamihara, JP31985–1991
Fukushima, JP22007
Tokyo, JP22000–2001
Yokkaichi, JP12021