Inventor
Taro Sugizaki
Inventor
Kanagawa, JP
Overview
Patents· 14 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
H01Lprimary
H01LSemiconductor devices17%
H10FInorganic semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation17%
H04NPictorial communication, e.g. television14%
H10DInorganic electric semiconductor devices11%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1011%
G02BOptical elements, systems or apparatus9%
H10BElectronic memory devices9%
G11CStatic stores6%
B82YSpecific uses or applications of nanostructures3%
G02FOptical devices or arrangements for the control of light by modification of the optical properties of the media of the elements involved therein3%
PatentTitleYear
11,081,511Imaging element, manufacturing method of imaging element, metal thin film filter, and electronic device202111,044,446Imaging device and electronic apparatus202110,797,093Imaging element, manufacturing method of imaging element, metal thin film filter, and electronic device202010,615,203Solid-state imaging device, imaging apparatus, and electronic apparatus202010,319,764Image sensor and electronic device201910,319,761Solid-state imaging device, imaging apparatus, and electronic apparatus201910,171,750Solid-state image sensor, imaging control method, signal processing method, and electronic apparatus20198,080,830'Semiconductor device and method of driving the same'20117,602,011'Semiconductor memory device having charge storage layer and method of manufacturing the same'20097,443,722'Semiconductor device and driving method therefor'20087,365,372'Semiconductor device and method for manufacturing semiconductor device'20086,984,267'Manufacture system for semiconductor device with thin gate insulating film'20066,541,393'Method for fabricating semiconductor device'20036,468,926'Manufacture method and system for semiconductor device with thin gate insulating film of oxynitride'2002Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
2002–2006Patents assigned to FUJITSU LTD (2)· patent assignee history
2002–2006Based in Kawasaki, JP· patent location history
2008–2020Patents assigned to SONY CORP (7)· patent assignee history
2008–2021Based in Kanagawa, JP· patent location history
2008Based in Tokyo, JP· patent location history
2009Patents assigned to FUJITSU MICROELECTRONICS LTD (1)· patent assignee history
2009Based in Fujisawa, JP· patent location history
2011Patents assigned to SUGIZAKI TARO (1)· patent assignee history
2021Patents assigned to SONY SEMICONDUCTOR SOLUTIONS CORP (2)· patent assignee history
2021Based in Yokohama-shi, Kanagawa, JP· patent location history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| SONY CORP | 7 | 2008–2020 |
| FUJITSU LTD | 2 | 2002–2006 |
| SONY SEMICONDUCTOR SOLUTIONS CORP | 2 | 2021 |
| FUJITSU MICROELECTRONICS LTD | 1 | 2009 |
| SUGIZAKI TAROself | 1 | 2011 |
Locations
| Location | Patents | Span |
|---|---|---|
| Kanagawa, JP | 8 | 2008–2021 |
| Kawasaki, JP | 3 | 2002–2006 |
| Yokohama-shi, Kanagawa, JP | 1 | 2021 |
| Fujisawa, JP | 1 | 2009 |
| Tokyo, JP | 1 | 2008 |