Inventor
Wilbur D. Johnston, Jr.
Inventor
Mendham, NJ, US
Overview
Patents· 17 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
Y10Sprimary
Y10STechnical subjects covered by former uspc cross-reference art collections [xracs] and digests21%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1017%
H01SDevices using the process of light amplification by stimulated emission of radiation [laser] to amplify or generate light11%
C30BSingle-crystal growth9%
H10DInorganic electric semiconductor devices9%
H10FInorganic semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation9%
H10HInorganic light-emitting semiconductor devices having potential barriers6%
Y02EReduction of greenhouse gas [ghg] emissions, related to energy generation, transmission or distribution6%
B24BMachines, devices, or processes for grinding or polishing2%
G02BOptical elements, systems or apparatus2%
PatentTitleYear
6,282,356'Optical waveguide device with enhanced stability'20016,211,539'Semi-insulated indium phosphide based compositions'20016,172,999'Process for making integrated laser/modulators'20016,101,204'Process for making integrated laser/modulators'20006,064,782'Edge receptive photodetector devices'20004,999,315'Method of controlling dopant incorporation in high resistivity In-based compound Group III-V epitaxial layers'19914,935,382'Method of making a semiconductor-insulator-semiconductor structure'19904,888,624'Semiconductor devices employing high resistivity in-based compound group III-IV epitaxial layer for current confinement'19894,878,956'Single crystal films of cubic group II fluorides on semiconductor compounds'19894,870,032'Method of fabricating single crystal films of cubic group II fluorides on semiconductor componds by molecular beam epitaxy'19894,738,934'Method of making indium phosphide devices'19884,716,130'MOCVD of semi-insulating indium phosphide based compositions'19874,660,208'Semiconductor devices employing Fe-doped MOCVD InP-based layer for current confinement'19874,213,801'Ohmic contact of N-GaAs to electrical conductive substrates by controlled growth of N-GaAs polycrystalline layers'19804,098,031'Method for lapping semiconductor material'19784,074,305'GaAs layers as contacts to thin film semiconductor layers'19783,982,265'Devices containing aluminum-V semiconductor and method for making'1976Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
1976–1980Patents assigned to BELL TELEPHONE LABOR INC (4)· patent assignee history
1976–1980Based in Holmdel, NJ, US· patent location history
1987–1990Patents assigned to AMERICAN TELEPHONE & TELEGRAPH (7)· patent assignee history
1987–2001Based in Mendham, NJ, US· patent location history
1991Patents assigned to AT & T BELL LAB (1)· patent assignee history
2000–2001Patents assigned to LUCENT TECHNOLOGIES INC (3)· patent assignee history
2000–2001Based in Mendham Township, NJ, US· patent location history
2001Patents assigned to AGERE SYST OPTOELECTRONICS (1)· patent assignee history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| AMERICAN TELEPHONE & TELEGRAPH | 7 | 1987–1990 |
| BELL TELEPHONE LABOR INC | 4 | 1976–1980 |
| LUCENT TECHNOLOGIES INC | 3 | 2000–2001 |
| AGERE SYST OPTOELECTRONICS | 1 | 2001 |
| AT & T BELL LAB | 1 | 1991 |
Locations
| Location | Patents | Span |
|---|---|---|
| Mendham, New Jersey, US | 10 | 1987–2001 |
| Holmdel, New Jersey, US | 4 | 1976–1980 |
| Mendham Township, New Jersey, US | 3 | 2000–2001 |