Inventor
Rami HOURANI
Inventor
US
Overview
Patents· 39 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
H01Lprimary
H01LSemiconductor devices20%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h1015%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1010%
G02BOptical elements, systems or apparatus9%
G03FPhotomechanical production of textured or patterned surfaces, e.g. for printing, for processing of semiconductor devices7%
H10DInorganic electric semiconductor devices7%
C23CCoating metallic material6%
B82YSpecific uses or applications of nanostructures4%
B05DProcesses for applying fluent materials to surfaces, in general2%
B05CApparatus for applying fluent materials to surfaces, in general2%
PatentTitleYear
12,510,707Total or local thickness variation for optical devices202512,412,838Integrated circuit structure with filled recesses202512,384,185Methods, systems, and apparatus for inkjet printing self-assembled monoloayer (SAM) structures on substrates202512,372,792High index edge blackening material202512,353,009Total or local thickness variation for optical devices202512,341,061Bottom-up fill dielectric materials for semiconductor structure fabrication and their methods of fabrication202512,249,489Optical device improvement202512,242,186Methods for increasing the density of high-index nanoimprint lithography films202512,208,637Patterning of optical device films via inkjet soluble mask, deposition, and lift-off202512,121,925Edge blackening for optical devices202412,109,641Optical device having structural and refractive index gradation, and method of fabricating the same202412,110,582Interfacial layer for optical film performance202412,087,836Contact over active gate structures with metal oxide-caped contacts to inhibit shorting202412,080,639Contact over active gate structures with metal oxide layers to inhibit shorting202412,077,860Doped amorphous optical device films and deposition via incorporation of dopant atoms202412,044,963High refractive index imprint compositions and materials and processes for making the same202412,036,578Interconnect structure surface modifications by passivating agents202411,990,403Dielectric helmet-based approaches for back end of line (BEOL) interconnect fabrication and structures resulting therefrom202411,976,002Methods for encapsulating silver mirrors on optical structures202411,976,351Titanium oxide optical device films deposited by physical vapor deposition202411,955,377Differential hardmasks for modulation of electrobucket sensitivity202411,953,826Lined photobucket structure for back end of line (BEOL) interconnect formation202411,892,771Methods for increasing the density of high-index nanoimprint lithography films202411,894,270Grating replication using helmets and topographically-selective deposition202411,869,889Self-aligned gate endcap (SAGE) architectures without fin end gap202411,868,043Imprint compositions with passivated nanoparticles and materials and processes for making the same202411,850,621Edge blackening for optical devices202311,837,644Contact over active gate structures with metal oxide-caped contacts to inhibit shorting202311,616,060Techniques for forming gate structures for transistors arranged in a stacked configuration on a single fin structure202311,532,724Selective gate spacers for semiconductor devices202211,456,248Etch stop layer-based approaches for conductive via fabrication and structures resulting therefrom202211,417,567Conductive cap-based approaches for conductive via fabrication and structures resulting therefrom202211,404,482Self-aligned repeatedly stackable 3D vertical RRAM202211,398,428Multifunctional molecules for selective polymer formation on conductive surfaces and structures resulting therefrom202211,335,598Grating replication using helmets and topographically-selective deposition202211,251,072Differential hardmasks for modulation of electrobucket sensitivity202211,232,980Bottom-up fill dielectric materials for semiconductor structure fabrication and their methods of fabrication202211,139,401Vertical thin film transistor structures with localized gate dielectric202111,137,681Lined photobucket structure for back end of line (BEOL) interconnect formation2021Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
2021–2025Patents assigned to INTEL CORP (22)· patent assignee history
2021–2025Based in US· patent location history
2023–2025Patents assigned to APPLIED MATERIALS INC (17)· patent assignee history
2024Patents assigned to CEBALLOS ANDREW (1)· patent assignee history
2024Patents assigned to GODET LUDOVIC (1)· patent assignee history
2024Patents assigned to HAYEE FARIAH (1)· patent assignee history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| INTEL CORP | 22 | 2021–2025 |
| APPLIED MATERIALS INC | 17 | 2023–2025 |
| CEBALLOS ANDREW | 1 | 2024 |
| GODET LUDOVIC | 1 | 2024 |
| HAYEE FARIAH | 1 | 2024 |
Locations
| Location | Patents | Span |
|---|---|---|
| US | 39 | 2021–2025 |