Inventor
Jonathan D. Chapple-Sokol
Inventor
Essex Junction, VT, US
Overview
Patents· 28 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
H10Wprimary
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h1020%
C23CCoating metallic material16%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1014%
Y10STechnical subjects covered by former uspc cross-reference art collections [xracs] and digests11%
B82YSpecific uses or applications of nanostructures5%
H10BElectronic memory devices5%
H10FInorganic semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation5%
G01NInvestigating or analysing materials by determining their chemical or physical properties4%
G02BOptical elements, systems or apparatus4%
H01LSemiconductor devices4%
PatentTitleYear
9,685,370'Titanium tungsten liner used with copper interconnects'20179,196,519'Achieving uniform capacitance between an electrostatic chuck and a semiconductor wafer'20158,084,864'Electromigration resistant aluminum-based metal interconnect structure'20118,003,536'Electromigration resistant aluminum-based metal interconnect structure'20117,879,716'Metal seed layer deposition'20117,649,262'Suppression of localized metal precipitate formation and corresponding metallization depletion in semiconductor processing'20107,572,650'Suppression of localized metal precipitate formation and corresponding metallization depletion in semiconductor processing'20097,235,487'Metal seed layer deposition'20077,173,338'Suppression of localized metal precipitate formation and corresponding metallization depletion in semiconductor processing'20076,762,121'Method of forming refractory metal contact in an opening, and resulting structure'20046,498,096'Borderless contact to diffusion with respect to gate conductor and methods for fabricating'20026,426,558'Metallurgy for semiconductor devices'20026,215,190'Borderless contact to diffusion with respect to gate conductor and methods for fabricating'20015,665,608'Method of aluminum oxide low pressure chemical vapor deposition (LPCVD) system-fourier transform infrared (FTIR) source chemical control'19975,648,113'Aluminum oxide LPCVD system'19975,612,255'One dimensional silicon quantum wire devices and the method of manufacture thereof'19975,603,988'Method for depositing a titanium or tantalum nitride or nitride silicide'19975,540,777'Aluminum oxide LPCVD system'19965,534,066'Fluid delivery apparatus having an infrared feedline sensor'19965,505,816'Etching of silicon dioxide selectively to silicon nitride and polysilicon'19965,492,718'Fluid delivery apparatus and method having an infrared feedline sensor'19965,465,859'Dual phase and hybrid phase shifting mask fabrication using a surface etch monitoring technique'19955,431,734'Aluminum oxide low pressure chemical vapor deposition (LPCVD) system-fourier transform infrared (FTIR) source chemical control'19955,383,088'Storage capacitor with a conducting oxide electrode for metal-oxide dielectrics'19955,354,707'Method of making semiconductor quantum dot light emitting/detecting devices'19945,293,050'Semiconductor quantum dot light emitting/detecting devices'19945,268,069'Safe method for etching silicon dioxide'19935,134,963'LPCVD reactor for high efficiency, high uniformity deposition'1992Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
1992–2017Patents assigned to IBM (27)· patent assignee history
1992–1997Based in Poughkeepsie, NY, US· patent location history
1996–1997Based in Chittenden County, VT, US· patent location history
1997–2017Based in Essex Junction, VT, US· patent location history
2011Patents assigned to CHAPPLE-SOKOL JONATHAN D (1)· patent assignee history
2011Patents assigned to DELIBAC DANIEL A (1)· patent assignee history
2011Patents assigned to HE ZHONG-XIANG (1)· patent assignee history
2015–2017Patents assigned to GLOBALFOUNDRIES INC (2)· patent assignee history
2015Based in Burlington, VT, US· patent location history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| IBM | 27 | 1992–2017 |
| GLOBALFOUNDRIES INC | 2 | 2015–2017 |
| CHAPPLE-SOKOL JONATHAN Dself | 1 | 2011 |
| DELIBAC DANIEL A | 1 | 2011 |
| HE ZHONG-XIANG | 1 | 2011 |
Locations
| Location | Patents | Span |
|---|---|---|
| Essex Junction, VT, US | 13 | 1997–2017 |
| Poughkeepsie, New York, US | 12 | 1992–1997 |
| Chittenden County, VT, US | 2 | 1996–1997 |
| Burlington, VT, US | 1 | 2015 |