Inventor
Balaji Padmanabhan
Inventor
Tempe, AZ, US
Overview
Patents· 45 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
H01Lprimary
H01LSemiconductor devices37%
H10DInorganic electric semiconductor devices36%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h1020%
H03KPulse technique6%
H10HInorganic light-emitting semiconductor devices having potential barriers1%
PatentTitleYear
10,811,514Electronic device including an enhancement-mode HEMT and a method of using the same202010,770,381Semiconductor component and method of manufacture202010,707,203Cascode semiconductor device structure and method therefor202010,658,351Electronic device including a transistor having structures with different characteristics202010,593,666Method of forming a heterojunction semiconductor device having integrated clamping device202010,326,011Electronic device including a HEMT201910,276,686Cascode configured semiconductor component201910,276,713Semiconductor component and method of manufacture201910,218,350Circuit with transistors having coupled gates201910,217,737Cascode semiconductor device structure and method therefor201910,199,373Method of forming a heterojunction semiconductor device having integrated clamping device201910,163,764Semiconductor component and method of manufacture201810,128,174Semiconductor component and method of manufacture201810,056,499Bidirectional JFET and a process of forming the same20189,917,184'Semiconductor component that includes a clamping structure and method of manufacturing the semiconductor component'20189,905,500'Semiconductor component and method of manufacture'20189,882,020'Cascode configured semiconductor component'20189,837,399Cascode configured semiconductor component and method20179,818,674'Semiconductor component and method of manufacture'20179,818,677'Semiconductor component having group III nitride semiconductor device mounted on substrate and interconnected to lead frame'20179,818,854'Electronic device including a bidirectional HEMT'20179,780,196'Method of forming a semiconductor device including forming a shield conductor overlying a gate conductor'20179,780,019'Semiconductor component and method of manufacture'20179,773,895'Half-bridge HEMT circuit and an electronic package including the circuit'20179,748,224'Heterojunction semiconductor device having integrated clamping device'20179,741,711'Cascode semiconductor device structure and method therefor'20179,735,095'Semiconductor component and method of manufacture'20179,660,062'Bidirectional HEMT and an electronic package including the bidirectional HEMT'20179,653,387'Semiconductor component and method of manufacture'20179,627,530'Semiconductor component and method of manufacture'20179,620,443'Semiconductor component and method of manufacture'20179,502,550'High electron mobility semiconductor device and method therefor'20169,466,708'Method of forming a transistor and structure therefor'20169,450,091'Semiconductor device with enhanced mobility and method'20169,245,963'Insulated gate semiconductor device structure'20169,129,889'High electron mobility semiconductor device and method therefor'20159,048,214'Bidirectional field effect transistor and method'20159,029,215'Method of making an insulated gate semiconductor device having a shield electrode structure'20158,969,956'Electronic device including a trench and a conductive structure therein'20158,889,532'Method of making an insulated gate semiconductor device and structure'20148,878,286'Semiconductor device with enhanced mobility and method'20148,836,024'Electronic device including a trench and a conductive structure therein having a contact within a Schottky region and a process of forming the same'20148,723,238'Method of forming a transistor and structure therefor'20148,697,560'Process of forming an electronic device including a trench and a conductive structure therein'20148,466,513'Semiconductor device with enhanced mobility and method'2013Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
2013–2016Patents assigned to SEMICONDUCTOR COMPONENTS IND (11)· patent assignee history
2013–2016Patents assigned to PADMANABHAN BALAJI (9)· patent assignee history
2013–2016Patents assigned to VENKATRAMAN PRASAD (8)· patent assignee history
2013–2016Patents assigned to GRIVNA GORDON M (6)· patent assignee history
2013–2020Based in Tempe, AZ, US· patent location history
2016–2020Patents assigned to SEMICONDUCTOR COMPONENTS IND LLC (34)· patent assignee history
2017–2020Based in Scottsdale, AZ, US· patent location history
2017Based in Temp, AZ, US· patent location history
2020Based in Chandler, AZ, US· patent location history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| SEMICONDUCTOR COMPONENTS IND LLC | 34 | 2016–2020 |
| SEMICONDUCTOR COMPONENTS IND | 11 | 2013–2016 |
| PADMANABHAN BALAJIself | 9 | 2013–2016 |
| VENKATRAMAN PRASAD | 8 | 2013–2016 |
| GRIVNA GORDON M | 6 | 2013–2016 |
Locations
| Location | Patents | Span |
|---|---|---|
| Tempe, AZ, US | 40 | 2013–2020 |
| Scottsdale, AZ, US | 3 | 2017–2020 |
| Chandler, AZ, US | 1 | 2020 |
| Temp, AZ, US | 1 | 2017 |