Inventor

Sang-in Lee

Inventor

Kyungki-do, KR

Overview

1993–2020

Patent span

Electricity

Primary field (CPC H)

Patents· 106 as inventor

Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.

H10Pprimary

H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1019%

H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h1015%

C23CCoating metallic material13%

H10DInorganic electric semiconductor devices11%

H10BElectronic memory devices6%

LOC146%

Y10STechnical subjects covered by former uspc cross-reference art collections [xracs] and digests5%

LOC183%

H01JElectric discharge tubes or discharge lamps2%

H01LSemiconductor devices2%

PatentTitleYear

10,645,828Display apparatus2020 D0879128Computer screen with menu display2020 10,165,697Display apparatus2018 10,036,955Portable image-forming device2018 9,888,146'Image forming apparatus and method for controlling the same'2018 D0788843'Printer'2017 D0785085'Printer'2017 D0783712'Printer'2017 9,556,514'Spatial deposition of material using short-distance reciprocating motions'2017 9,558,963'Plasma reactor with conductive member in reaction chamber for shielding substrate from undesirable irradiation'2017 9,546,423'Cleaning of deposition device by injecting cleaning gas into deposition device'2017 D0772977'Printer'2016 9,435,030'Radical reactor with inverted orientation'2016 D0764574'Printer'2016 D0763956'Printer'2016 D0763959'Printer'2016 D0763349'Printer'2016 D0763351'Printer'2016 9,376,455'Molecular layer deposition using reduction process'2016 D0759158'Printer'2016 D0752141'Printer'2016 D0750705'Printer'2016 D0748723'Printer'2016 D0746907'Case for a printer'2016 D0744585'Printer'2015 D0742960'Multi-function printer'2015 9,177,788'Plasma reactor with conductive member in reaction chamber for shielding substrate from undesirable irradiation'2015 9,163,310'Enhanced deposition of layer on substrate using radicals'2015 9,145,608'Scanning injector assembly module for processing substrate'2015 9,129,913'Formation of barrier layer on device using atomic layer deposition'2015 D0732093'Gas tube assembly'2015 D0732092'Gas injection plate'2015 9,051,637'Securing of shadow mask and substrate on susceptor of deposition apparatus'2015 D0730915'Docking keyboard'2015 D0725184'Printer'2015 D0725185'Printer'2015 D0723943'Toner package'2015 8,895,108'Method for forming thin film using radicals generated by plasma'2014 8,877,300'Atomic layer deposition using radicals of gas mixture'2014 8,871,628'Electrode structure, device comprising the same and method for forming electrode structure'2014 D0715853'Case for a printer'2014 D0715357'Case for a printer'2014 8,851,012'Vapor deposition reactor using plasma and method for forming thin film using the same'2014 8,840,958'Combined injection module for sequentially injecting source precursor and reactant precursor'2014 8,770,142'Electrode for generating plasma and plasma generator'2014 8,771,791'Deposition of layer using depositing apparatus with reciprocating susceptor'2014 8,758,512'Vapor deposition reactor and method for forming thin film'2014 8,722,526'Growing of gallium-nitrade layer on silicon substrate'2014 8,697,198'Magnetic field assisted deposition'2014 8,691,669'Vapor deposition reactor for forming thin film'2014 8,617,652'Depositing material on fibrous textiles using atomic layer deposition for increasing rigidity and strength'2013 8,501,633'Forming substrate structure by filling recesses with deposition material'2013 8,470,718'Vapor deposition reactor for forming thin film'2013 8,351,858'Apparatus and method for obtaining information on bluetooth devices in a computing device using bluetooth'2013 8,263,502'Forming substrate structure by filling recesses with deposition material'2012 8,257,799'Method for forming thin film using radicals generated by plasma'2012 7,430,751'Data recording/reproducing apparatus with an improved structure for securely supporting a front panel'2008 7,304,253'Switching device of an image recording and replaying apparatus'2007 7,205,247'Atomic layer deposition of hafnium-based high-k dielectric'2007 7,052,918'Multi-layer film for thin film structure, capacitor using the same and fabrication method thereof'2006 7,050,937'Performance measurement system'2006 6,576,053'Method of forming thin film using atomic layer deposition method'2003 6,570,253'Multi-layer film for a thin film structure and a capacitor using the same'2003 6,478,872'Method of delivering gas into reaction chamber and shower head used to deliver gas'2002 6,391,769'Method for forming metal interconnection in semiconductor device and interconnection structure fabricated thereby'2002 6,376,355'Method for forming metal interconnection in semiconductor device'2002 6,372,598'Method of forming selective metal layer and method of forming capacitor and filling contact hole using the same'2002 6,358,829'Semiconductor device fabrication method using an interface control layer to improve a metal interconnection layer'2002 6,284,591'Formation method of interconnection in semiconductor device'2001 6,270,572'Method for manufacturing thin film using atomic layer deposition'2001 6,211,082'Chemical vapor deposition of tungsten using nitrogen-containing gas'2001 6,207,487'Method for forming dielectric film of capacitor having different thicknesses partly'2001 6,197,683'Method of forming metal nitride film by chemical vapor deposition and method of forming metal contact of semiconductor device using the same'2001 6,180,447'Methods for fabricating integrated circuit capacitors including barrier layers having grain boundary filling material'2001 6,174,809'Method for forming metal layer using atomic layer deposition'2001 6,156,644'Method for forming interconnects for semiconductor devices using reaction control layers, and interconnects formed thereby'2000 6,144,060'Integrated circuit devices having buffer layers therein which contain metal oxide stabilized by heat treatment under low temperature'2000 6,139,700'Method of and apparatus for forming a metal interconnection in the contact hole of a semiconductor device'2000 6,140,671'Semiconductor memory device having capacitive storage therefor'2000 6,087,257'Methods of fabricating a selectively deposited tungsten nitride layer and metal wiring using a tungsten nitride layer'2000 6,013,576'Methods for forming an amorphous tantalum nitride film'2000 6,001,683'Formation method of interconnection in semiconductor device'1999 6,001,660'Methods of forming integrated circuit capacitors using metal reflow techniques'1999 5,998,870'Wiring structure of semiconductor device and method for manufacturing the same'1999 5,970,309'Method of manufacturing a capacitor and a capacitor electrode in semiconductor device'1999 5,939,787'Semiconductor device having a multi-layer contact structure'1999 5,918,118'Dual deposition methods for forming contact metallizations, capacitors, and memory devices'1999 5,892,254'Integrated circuit capacitors including barrier layers having grain boundary filling material'1999 5,869,902'Semiconductor device and manufacturing method thereof'1999 5,851,917'Method for manufacturing a multi-layer wiring structure of a semiconductor device'1998 5,846,859'Method for manufacturing a semiconductor memory device having capacitive storage'1998 5,843,842'Method for manufacturing a semiconductor device having a wiring layer without producing silicon precipitates'1998 5,843,843'Method for forming a wiring layer a semiconductor device'1998 5,814,556'Method of filling a contact hole in a semiconductor substrate with a metal'1998 5,723,384'Method for manufacturing a capacitor in a semiconductor device using selective tungsten nitride thin film'1998 5,665,659'Method for forming metal layer of a semiconductor device'1997 5,589,713'Semiconductor device having an improved wiring layer'1996 5,572,072'Semiconductor device having a multi-layer metallization structure'1996 5,572,071'Semiconductor device having a multi-layer metallization structure'1996 5,569,961'Semiconductor device having a multi-layer metallization structure'1996 5,567,987'Semiconductor device having a multi-layer metallization structure'1996 5,552,341'Semiconductor device and method for manufacturing the same'1996 5,534,463'Method for forming a wiring layer'1996 5,355,020'Semiconductor device having a multi-layer metal contact'1994 5,266,521'Method for forming a planarized composite metal layer in a semiconductor device'1993 5,229,325'Method for forming metal wirings of semiconductor device'1993

Career & activity timeline

Assembled from patent assignee/location history and declaration credentials.

1993–2020Patents assigned to SAMSUNG ELECTRONICS CO LTD (72)· patent assignee history

1993–2013Based in Suwon-si, KR· patent location history

1996–2003Based in Kyungki-do, KR· patent location history

2012–2015Patents assigned to LEE SANG IN (17)· patent assignee history

2012–2015Patents assigned to SYNOS TECHNOLOGY INC (7)· patent assignee history

2012–2015Based in Sunnyvale, CA, US· patent location history

2013–2017Patents assigned to VEECO ALD INC (24)· patent assignee history

2013–2016Patents assigned to LEE SANG-IN (6)· patent assignee history

2015–2018Based in Seongnam-si, KR· patent location history

2015–2020Based in Seoul, KR· patent location history

Inventor activity

Assignee and location history derived from the patent record.

Assignees

Assignee	Patents	Span
SAMSUNG ELECTRONICS CO LTD	72	1993–2020
VEECO ALD INC	24	2013–2017
LEE SANG INself	17	2012–2015
SYNOS TECHNOLOGY INC	7	2012–2015
LEE SANG-INself	6	2013–2016

Locations

Location	Patents	Span
Kyungki-do, KR	28	1996–2003
Sunnyvale, California, US	23	2012–2015
Suwon-si, KR	18	1993–2013
Seongnam-si, KR	13	2015–2018
Seoul, KR	10	2015–2020