LexDanaLexDanabeta
Inventor

Masahiro Sakai

Inventor
Nagoya, JP

Overview

59→
Patents
1980–2021
Patent span
Electricity
Primary field (CPC H)

Patents· 59 as inventor

Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.

H01Jprimary
H01JElectric discharge tubes or discharge lamps12%
C09KMaterials for miscellaneous applications, not provided for elsewhere10%
C30BSingle-crystal growth9%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h108%
G03GElectrography7%
H01LSemiconductor devices5%
G06FElectric digital data processing4%
H10HInorganic light-emitting semiconductor devices having potential barriers4%
H10NElectric solid-state devices not otherwise provided for4%
Y10TTechnical subjects covered by former us classification4%
PatentTitleYear
10,940,518Manufacturing method for press-formed article202110,754,906Information processing apparatus, information processing system, information processing method, and recording medium202010,646,158Method of using autonomic nerve fluctuations and system using the same202010,426,916Method of using autonomic nerve fluctuations and system using the same201910,419,526Plant control system, controller, manager, and plant information processing method201910,249,494Free-standing substrate, function element and method for producing same201910,192,738Methods of producing seed crystal substrates and group 13 element nitride crystals, and seed crystal substrates201910,041,186Method for producing nitride crystal201810,025,283Controller, manager, plant control system, and data processing method20189,653,649'Gallium nitride substrates and functional devices'20179,431,166'Inductor and method of manufacturing the same'20169,374,271'Field device, communication system, and method for controlling field device'20169,287,453'Composite substrates and functional device'20169,090,988'Method of producing crystals of nitrides of group 13 elements and melt compositions'20158,845,929'Ultraviolet light emitting material'20148,803,389'Stator and motor provided with the stator'20148,795,431'Method for producing gallium nitride layer and seed crystal substrate used in same'20148,707,273'Precondition generating apparatus'20148,584,093'Pre-condition generation device, post-condition generation device, and method for generating these conditions'20138,317,563'Method for producing plasma display panel'20128,298,362'Manufacturing method for plasma display panel'20128,236,201'Blue phosphor, light-emitting device, and plasma display panel'20128,164,259'Plasma display panel'20128,160,521'Mobile communication terminal and method for controlling a plurality of receiving apparatuses mounted on mobile communication terminal'20128,142,684'Method of manufacturing blue silicate phosphor, and blue silicate phosphor and light-emitting device'20128,129,905'Phosphor and light emitting device using the phosphor'20127,965,015'Lamb wave device'20117,941,081'Developing unit and image forming apparatus using the same'20117,932,676'Plasma display panel'20117,902,756'Phosphor, light-emitting device, and plasma display panel'20117,853,231'Mobile communication terminal and associated methodology for reception during diversity interruption'20107,825,417'Epitaxial wafers, method for manufacturing of epitaxial wafers, method of suppressing bowing of these epitaxial wafers and semiconductor multilayer structures using these epitaxial wafers'20107,792,473'Development apparatus and image forming apparatus'20107,751,789'Mobile communication terminal and associated methodology for reception during diversity interruption'20107,687,216'Two-component developer and two-component developing apparatus using the same'20107,598,826'Piezoelectric thin film device having a drive section with a weighted portion'20097,587,154'Developing unit and image forming apparatus using the same'20097,479,658'Epitaxial wafers, method for manufacturing of epitaxial wafers, method of suppressing bowing of these epitaxial wafers and semiconductor multilayer structures using these epitaxial wafers'20097,465,413'Phosphor and plasma display panel using the same'20087,291,290'Phosphor, method of manufacturing same, and plasma display panel using same'20077,285,913'Plasma display device having blue phosphor layers with alkaline earth metal aluminate containing molybdenum or tungsten'20077,270,774'Phosphor having resistance to deterioration caused by ultraviolet rays, and gas discharge display device of which image quality is not readily deteriorated over time'20077,238,303'Phosphor and plasma display device'20077,153,451'Phosphors and related manufacturing method, display device, and fluorescent lamp'20067,135,347'Method for manufacturing nitride film including high-resistivity GaN layer and epitaxial substrate manufactured by the method'20066,829,178'Nonvolatile memory device'20046,678,482'Image forming apparatus and method for determining suitability of replaceable component'20046,524,958'Method of forming channel in thin film transistor using non-ionic excited species'20036,459,867'Developing apparatus'20026,339,686'Developer unit with cleaning element'20026,308,018'Image forming apparatus'20016,178,339'Wireless communication filter operating at low temperature'20016,004,866'Method for manufacturing bonded wafer and bonded wafer manufactured thereby'19995,885,937'Superconducting tunnel junction element and superconducting device'19995,869,846'Superconducting junction device'19995,856,204'Tunnel-type Josephson element and method for manufacturing the same'19995,731,270'Oxide superconductor and method and apparatus for fabricating the same'19984,482,008'Air conditioner operable in a room cooling mode and a room warming mode using either outdoor air or a separate heat source as a source of heat'19844,183,761'Silica bricks and method for manufacturing silica bricks'1980

Career & activity timeline

Assembled from patent assignee/location history and declaration credentials.

1998–2007Patents assigned to MATSUSHITA ELECTRIC INDUSTRIAL CO LTD (11)· patent assignee history
1999–2011Based in Osaka, JP· patent location history
2001–2011Patents assigned to SHARP KK (8)· patent assignee history
2006–2019Patents assigned to NGK INSULATORS LTD (12)· patent assignee history
2006–2019Based in Nagoya, JP· patent location history
2007–2008Based in Yawata, JP· patent location history
2008–2014Patents assigned to PANASONIC CORP (10)· patent assignee history
2010–2012Based in Yokohama, JP· patent location history
2011–2020Based in Kyoto, JP· patent location history
2012–2014Patents assigned to SAKAI MASAHIRO (11)· patent assignee history

Inventor activity

Assignee and location history derived from the patent record.

Assignees
AssigneePatentsSpan
NGK INSULATORS LTD122006–2019
MATSUSHITA ELECTRIC INDUSTRIAL CO LTD111998–2007
SAKAI MASAHIROself112012–2014
PANASONIC CORP102008–2014
SHARP KK82001–2011
Locations
LocationPatentsSpan
Nagoya, JP122006–2019
Osaka, JP121999–2011
Kyoto, JP112011–2020
Yawata, JP52007–2008
Yokohama, JP32010–2012