Inventor
Shigehiko Saida
Inventor
Yokohama, JP
Overview
Patents· 25 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
H10Bprimary
H10BElectronic memory devices27%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1024%
H10DInorganic electric semiconductor devices23%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h1018%
C23CCoating metallic material3%
H01LSemiconductor devices2%
H04LTransmission of digital information, e.g. telegraphic communication2%
Y10STechnical subjects covered by former uspc cross-reference art collections [xracs] and digests2%
PatentTitleYear
RE046122'Semiconductor device and method of manufacturing the same'20167,612,401'Non-volatile memory cell'20097,541,233'Semiconductor device and method of manufacturing the same'20097,372,113'Semiconductor device and method of manufacturing the same'20087,148,158'Semiconductor device and method for manufacturing the same'20067,129,132'Semiconductor device and method of manufacturing the same'20067,098,115'Semiconductor device and method of manufacturing the same'20067,081,386'Semiconductor device and method of manufactuing the same'20067,060,555'Semiconductor device and method of manufacturing the same'20066,992,020'Method of fabricating semiconductor device'20066,903,422'Semiconductor integrated circuits, fabrication method for the same and semiconductor integrated circuit systems'20056,841,850'Semiconductor device having silicon nitride film and silicon oxide film, and method of fabricating the same'20056,794,713'Semiconductor device and method of manufacturing the same including a dual layer raised source and drain'20046,790,723'Semiconductor device and method of manufacturing the same'20046,774,462'Semiconductor device comprising dual silicon nitride layers with varying nitrogen ratio'20046,772,045'System for determining dry cleaning timing, method for determining dry cleaning timing, dry cleaning method, and method for manufacturing semiconductor device'20046,713,359'Semiconductor device and method of manufacturing the same including raised source/drain comprising SiGe or SiC'20046,538,271'Semiconductor device and method of manufacturing the same'20036,333,547'Semiconductor device and method of manufacturing the same'20016,326,658'Semiconductor device including an interface layer containing chlorine'20016,284,583'Semiconductor device and method of manufacturing the same'20016,146,938'Method of fabricating semiconductor device'20005,949,102'Semiconductor device having a gate electrode with only two crystal grains'19995,869,858'Semiconductor device for reducing variations in characteristics of the device'19995,866,930'Semiconductor device and method of manufacturing the same'1999Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
1999–2016Patents assigned to TOSHIBA KK (25)· patent assignee history
1999–2016Based in Yokohama, JP· patent location history
2004–2009Based in Yokkaichi, JP· patent location history
2005–2006Based in Mie, JP· patent location history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| TOSHIBA KK | 25 | 1999–2016 |
Locations
| Location | Patents | Span |
|---|---|---|
| Yokohama, JP | 17 | 1999–2016 |
| Yokkaichi, JP | 6 | 2004–2009 |
| Mie, JP | 2 | 2005–2006 |