Inventor
LO-HENG CHANG
Inventor
TW
Overview
Patents· 50 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
H10Dprimary
H10DInorganic electric semiconductor devices30%
H01LSemiconductor devices25%
B82YSpecific uses or applications of nanostructures24%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1012%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h108%
H10BElectronic memory devices1%
PatentTitleYear
12,588,242Field effect transistor with dual silicide and method202612,563,815Semiconductor structure having first silicide features and second silicide features and method for manufacturing the same202612,538,570Reduction of gate-drain capacitance202612,532,505Semiconductor structure and method for forming the same202612,513,937Semiconductor devices and methods of fabrication thereof202512,507,445—202512,501,671Semiconductor device and manufacturing method thereof202512,471,315Semiconductor device including spacers on sides of dielectric structure and manufacturing method thereof202512,457,798Dielectric liner for field effect transistors202512,446,305Uniform gate width for nanostructure devices202512,389,618Semiconductor transistor device includes backside via electrically connecting epitaxial source/drain structures and method for forming the same202512,382,666Enlargement of GAA nanostructure202512,347,775Semiconductor devices with backside power rail and methods of fabrication thereof202512,349,379Semiconductor devices and methods of manufacture202512,342,616Semiconductor device structure and methods of forming the same202512,300,732Gate all around transistor with dual inner spacers202512,302,607Backside gate contact202512,278,273Semiconductor device with backside gate isolation structure and method for forming the same202512,243,780Semiconductor device structure and method for forming the same202512,107,011Method for fabricating a semiconductor device202412,074,204Semiconductor structure and method for forming the same202412,046,516Semiconductor device with gate cut feature and method for forming the same202411,996,461Backside gate contact202411,996,482Semiconductor device202411,984,361Multi-gate devices and method of fabricating the same202411,967,594Semiconductor device structure and methods of forming the same202411,929,287Dielectric liner for field effect transistors202411,916,122Gate all around transistor with dual inner spacers202411,901,428Semiconductor device with backside gate isolation structure and method for forming the same202411,855,096Uniform gate width for nanostructure devices202311,855,216Inner spacers for gate-all-around transistors202311,769,696Method for fabricating a semiconductor device202311,658,226Backside gate contact202311,621,197Semiconductor device with gate cut feature and method for forming the same202311,605,737Semiconductor device and manufacturing method thereof202311,600,529Multi-gate devices and method of fabricating the same202311,532,626Reduction of gate-drain capacitance202211,502,034Semiconductor devices with backside power rail and methods of fabrication thereof202211,469,326Semiconductor devices and methods of fabrication thereof202211,450,754Semiconductor devices and methods of manufacture202211,450,663Semiconductor device structure and methods of forming the same202211,437,279Method for fabricating a semiconductor device202211,430,892Inner spacers for gate-all-around transistors202211,417,777Enlargement of GAA nanostructure202211,398,550Semiconductor device with facet S/D feature and methods of forming the same202211,322,409Multi-gate devices and method of fabricating the same202211,315,925Uniform gate width for nanostructure devices202211,309,424Semiconductor device and manufacturing method thereof202211,264,502Semiconductor device and method202211,205,711Selective inner spacer implementations2021Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
2021–2026Patents assigned to TAIWAN SEMICONDUCTOR MFG CO LTD (50)· patent assignee history
2021–2026Based in TW· patent location history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| TAIWAN SEMICONDUCTOR MFG CO LTD | 50 | 2021–2026 |
Locations
| Location | Patents | Span |
|---|---|---|
| TW | 50 | 2021–2026 |