Inventor
YI-SHIN CHU
Inventor
TW
Overview
Patents· 25 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
H01Lprimary
H01LSemiconductor devices33%
H10FInorganic semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation21%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h1016%
H10DInorganic electric semiconductor devices15%
G01SRadio direction-finding4%
H01QAntennas, i.e. radio aerials4%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h103%
H01PWaveguides1%
Y02PClimate change mitigation technologies in the production or processing of goods1%
PatentTitleYear
12,507,490Semiconductor device including germanium region disposed in semiconductor substrate202512,495,632Semiconductor image sensor and method for forming the same202512,363,969Passivation layer for epitaxial semiconductor process202512,261,190Vertically stacked light sensors202512,224,482Antenna effect protection and electrostatic discharge protection for three-dimensional integrated circuit202512,218,106Backside contact to improve thermal dissipation away from semiconductor devices202512,205,868Oversized via as through-substrate-via (TSV) stop layer202512,166,054Image sensor with passivation layer for dark current reduction202412,148,853Germanium-based sensor with junction-gate field effect transistor and method of fabricating thereof202412,125,934Method of manufacturing an optical sensor202412,015,099Semiconductor sensor and methods thereof202411,908,900Passivation layer for epitaxial semiconductor process202411,901,393Image sensor and manufacturing method thereof202411,855,237Germanium-based sensor with junction-gate field effect transistor and method of fabricating thereof202311,848,345Image sensor with passivation layer for dark current reduction202311,824,254Antenna effect protection and electrostatic discharge protection for three-dimensional integrated circuit202311,756,936Backside contact to improve thermal dissipation away from semiconductor devices202311,756,862Oversized via as through-substrate-via (TSV) stop layer202311,600,737Germanium-based sensor with junction-gate field effect transistor and method of fabricating thereof202311,552,027Semiconductor packaging device comprising a shield structure202311,508,817Passivation layer for epitaxial semiconductor process202211,437,708Antenna effect protection and electrostatic discharge protection for three-dimensional integrated circuit202211,387,167Semiconductor structure and manufacturing method for the same202211,289,455Backside contact to improve thermal dissipation away from semiconductor devices202211,282,769Oversized via as through-substrate-via (TSV) stop layer2022Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
2022–2025Patents assigned to TAIWAN SEMICONDUCTOR MFG CO LTD (25)· patent assignee history
2022–2025Based in TW· patent location history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| TAIWAN SEMICONDUCTOR MFG CO LTD | 25 | 2022–2025 |
Locations
| Location | Patents | Span |
|---|---|---|
| TW | 25 | 2022–2025 |